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1.发明授权公开(公告)号：US11646341B2
公开(公告)日：2023-05-09
申请号：US16340305
申请日：2017-10-06
IPC分类号： H01L27/146 , H01L31/0304 , H01L31/109 , H01L31/18 , A61B1/04 , B60W50/00 , H04N5/33
CPC分类号： H01L27/1465 , H01L27/1463 , H01L27/14636 , H01L27/14694 , H01L31/03046 , H01L31/109 , H01L31/1844 , A61B1/041 , B60W50/00 , H01L27/14621 , H01L27/14627 , H04N5/33
摘要： A light-receiving device of an embodiment of the present disclosure includes a photoelectric conversion layer that includes a first compound semiconductor with a first conductivity type and absorbs a wavelength of an infrared region, a first semiconductor layer formed on the photoelectric conversion layer, and an insulation layer formed to surround the photoelectric conversion layer and the first semiconductor layer, the first semiconductor layer having a second conductivity-type region at a middle region excluding a periphery facing the photoelectric conversion layer.
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公开(公告)号：US11329084B2
公开(公告)日：2022-05-10
申请号：US16960801
申请日：2018-12-12
IPC分类号： H01L27/146 , H01L23/00
摘要： An imaging unit includes a photoelectric conversion layer including a compound semiconductor and having a light incident surface, and a light shielding portion provided in an optical path of light incident on the light incident surface and shielding light having a wavelength of less than 450 nm.
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公开(公告)号：US11271026B2
公开(公告)日：2022-03-08
申请号：US16924010
申请日：2020-07-08
IPC分类号： H01L27/146 , H04N5/355 , H04N5/3745
摘要： Imaging devices and electronic apparatuses incorporating imaging devices or image pick-up elements are provided. An imaging device as disclosed can include a substrate, a first opto-electronic converter having a first area formed in the substrate, and a second opto-electronic converter having a second area formed in the substrate. The first area is larger than the second area. In addition, a light blocking wall can extend from a first surface of the substrate such that at least a portion of the light blocking wall is between the first opto-electronic converter and the second opto-electronic converter.
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公开(公告)号：US10811456B2
公开(公告)日：2020-10-20
申请号：US16298395
申请日：2019-03-11
IPC分类号： H01L27/14 , H01L27/146 , G01J1/02 , H04N5/33 , H01L31/10 , H01L21/768 , H01L23/48 , H04N5/374 , H04N5/378
摘要： An imaging apparatus and a manufacturing method which enables sensitivity of the imaging apparatus using infrared rays to be improved. The imaging apparatus includes a light-receiving element array in which a plurality of light-receiving elements including a compound semiconductor having light-receiving sensitivity in an infrared range are arrayed, a signal processing circuit that processes a signal from the light-receiving element, an upper electrode formed on a light-receiving surface side of the light-receiving element, and a lower electrode that is paired with the upper electrode, in which the light-receiving element array and the signal processing circuit are joined to each other with a film of a predetermined material, the upper electrode and the signal processing circuit are connected to each other through a through-via-hole penetrating a part of the light-receiving element, and the lower electrode is made as an electrode common to the light-receiving elements arrayed in the light-receiving element array.
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公开(公告)号：US10522582B2
公开(公告)日：2019-12-31
申请号：US15761475
申请日：2016-09-21
摘要： The present technology relates to an imaging apparatus and a manufacturing method which enables sensitivity of an imaging apparatus using infrared rays to be improved. The imaging apparatus includes: a light-receiving element array in which a plurality of light-receiving elements including a compound semiconductor having light-receiving sensitivity in an infrared range are arrayed; a signal processing circuit that processes a signal from the light-receiving element; an upper electrode formed on a light-receiving surface side of the light-receiving element; and a lower electrode that is paired with the upper electrode, in which the light-receiving element array and the signal processing circuit are joined to each other with a film of a predetermined material, the upper electrode and the signal processing circuit are connected to each other through a through-via-hole penetrating a part of the light-receiving element, and the lower electrode is made as an electrode common to the light-receiving elements arrayed in the light-receiving element array. The present technology can be applied to an infrared sensor.
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公开(公告)号：US11239280B2
公开(公告)日：2022-02-01
申请号：US16749863
申请日：2020-01-22
发明人： Shunsuke Maruyama
IPC分类号： H01L27/146 , H01L27/30
摘要： A solid-state image sensor includes a pixel formed, upon forming a structure where a photoelectric conversion layer is laminated on a wiring layer constituting a pixel circuit, by forming at least the photoelectric conversion layer and a wiring layer bonding layer on a different substrate from a semiconductor substrate in which the wiring layer is formed, and by bonding the wiring layer bonding film of the different substrate and the wiring layer of the semiconductor substrate together.
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公开(公告)号：US20200161375A1
公开(公告)日：2020-05-21
申请号：US16749863
申请日：2020-01-22
发明人： Shunsuke Maruyama
IPC分类号： H01L27/30 , H01L27/146
摘要： A solid-state image sensor includes a pixel formed, upon forming a structure where a photoelectric conversion layer is laminated on a wiring layer constituting a pixel circuit, by forming at least the photoelectric conversion layer and a wiring layer bonding layer on a different substrate from a semiconductor substrate in which the wiring layer is formed, and by bonding the wiring layer bonding film of the different substrate and the wiring layer of the semiconductor substrate together.
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公开(公告)号：US11961863B2
公开(公告)日：2024-04-16
申请号：US17274782
申请日：2019-09-04
IPC分类号： H01L27/146
CPC分类号： H01L27/14634 , H01L27/14603 , H01L27/1461 , H01L27/1469
摘要： An imaging element including: a photoelectric conversion layer including a compound semiconductor material; a contact layer disposed to be stacked on the photoelectric conversion layer and including a diffusion region of first electrically-conductive type impurities in a selective region; a first insulating layer provided to be opposed to the photoelectric conversion layer with the contact layer interposed therebetween and having a first opening at a position facing the diffusion region; and a second insulating layer provided to be opposed to the contact layer with the first insulating layer interposed therebetween and having a second opening that communicates with the first opening and is smaller than the first opening.
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公开(公告)号：US10943932B2
公开(公告)日：2021-03-09
申请号：US16655647
申请日：2019-10-17
IPC分类号： H01L31/0224 , H01L27/144 , H01L27/146 , H01L31/103 , H01L31/0216 , H04N5/33 , H04N5/369 , H01L31/102
摘要： This light-receiving element includes: a substrate; a photoelectric conversion layer that is provided on the substrate and includes a first compound semiconductor, and absorbs a wavelength in an infrared region to generate electric charges; a semiconductor layer that is provided on the photoelectric conversion layer and includes a second compound semiconductor, and has an opening in a selective region; and an electrode that buries the opening of the semiconductor layer and is electrically coupled to the photoelectric conversion layer.
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公开(公告)号：US10559628B2
公开(公告)日：2020-02-11
申请号：US15990192
申请日：2018-05-25
发明人： Shunsuke Maruyama
IPC分类号： H01L27/146 , H01L27/30
摘要： A solid-state image sensor includes a pixel formed, upon forming a structure where a photoelectric conversion layer is laminated on a wiring layer constituting a pixel circuit, by forming at least the photoelectric conversion layer and a wiring layer bonding layer on a different substrate from a semiconductor substrate in which the wiring layer is formed, and by bonding the wiring layer bonding film of the different substrate and the wiring layer of the semiconductor substrate together.
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