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公开(公告)号：US11525984B2
公开(公告)日：2022-12-13
申请号：US17511203
申请日：2021-10-26
发明人： Yusuke Moriya , Masanori Iwasaki , Takashi Oinoue , Yoshiya Hagimoto , Hiroyasu Matsugai , Hiroyuki Itou , Suguru Saito , Keiji Ohshima , Nobutoshi Fujii , Hiroshi Tazawa , Toshiaki Shiraiwa , Minoru Ishida
摘要： The present technology relates to, for example, a lens attached substrate including a substrate which has a through-hole formed therein and a light shielding film formed on a side wall of the through-hole and a lens resin portion which is formed inside the through-hole of the substrate. The present technology can be applied to, for example, a lens attached substrate, a layered lens structure, a camera module, a manufacturing apparatus, a manufacturing method, an electronic device, a computer, a program, a storage medium, a system, and the like.
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公开(公告)号：US11322538B2
公开(公告)日：2022-05-03
申请号：US16481858
申请日：2018-02-08
发明人： Suguru Saito , Nobutoshi Fujii
IPC分类号： H01L27/146 , H01L23/00 , H01L31/18
摘要： The present technology relates to an imaging device, an electronic apparatus, and a method of manufacturing an imaging device capable of thinning a semiconductor on a terminal extraction surface while maintaining a strength of a semiconductor chip. There is provided an imaging device including: a first substrate having a pixel region in which pixels are two-dimensionally arranged, the pixels performing photoelectric conversion of light; and a second substrate in which a through silicon via is formed, in which a dug portion is formed in a back surface of the second substrate opposite to an incident side of light of the second substrate, and a redistribution layer (RDL) connected to a back surface of the first substrate is formed in the dug portion. The present technology can be applied to, for example, a semiconductor package including a semiconductor chip.
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公开(公告)号：US11264272B2
公开(公告)日：2022-03-01
申请号：US16959723
申请日：2018-12-28
IPC分类号： H01L21/768 , H01L23/522 , H01L23/528 , H01L23/532 , H01L27/146
摘要： The present technology relates to Provided are a semiconductor device in which an air gap structure can be formed in any desired region regardless of the layout of metallic wiring lines, a method for manufacturing the semiconductor device, and an electronic apparatus. A first wiring layer and a second wiring layer including a metallic film are stacked via a diffusion preventing film that prevents diffusion of the metallic film. The diffusion preventing film is formed by burying a second film in a large number of holes formed in a first film. At least the first wiring layer includes the metallic film, an air gap, and a protective film formed with the second film on the inner peripheral surface of the air gap, and the opening width of the air gap is equal to the opening width of the holes formed in the first film or is greater than the opening width of the holes.
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4.发明授权公开(公告)号：US10534162B2
公开(公告)日：2020-01-14
申请号：US15741549
申请日：2016-07-19
发明人： Hirotaka Yoshioka , Hiroyasu Matsugai , Hiroyuki Itou , Suguru Saito , Keiji Ohshima , Nobutoshi Fujii , Hiroshi Tazawa , Toshiaki Shiraiwa , Minoru Ishida
摘要： Substrates with lenses having lenses disposed therein are aligned with high accuracy. A stacked lens structure has a configuration in which substrates with lenses having a lens disposed on an inner side of a through-hole formed in the substrate are direct-bonded and stacked. In particular, one or more air grooves formed in surfaces of the substrates reduces an influence of air inside a void portion between adjacent lenses of a layered lens structure.
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公开(公告)号：US11769784B2
公开(公告)日：2023-09-26
申请号：US17716225
申请日：2022-04-08
发明人： Suguru Saito , Nobutoshi Fujii
IPC分类号： H01L27/146 , H01L23/00 , H01L31/18 , A61B1/04
CPC分类号： H01L27/14687 , A61B1/04 , H01L24/14 , H01L27/1469 , H01L27/14634 , H01L27/14636 , H01L31/18
摘要： The present technology relates to an imaging device, an electronic apparatus, and a method of manufacturing an imaging device capable of thinning a semiconductor on a terminal extraction surface while maintaining a strength of a semiconductor chip. There is provided an imaging device including: a first substrate having a pixel region in which pixels are two-dimensionally arranged, the pixels performing photoelectric conversion of light; and a second substrate in which a through silicon via is formed, in which a dug portion is formed in a back surface of the second substrate opposite to an incident side of light of the second substrate, and a redistribution layer (RDL) connected to a back surface of the first substrate is formed in the dug portion. The present technology can be applied to, for example, a semiconductor package including a semiconductor chip.
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公开(公告)号：US11538843B2
公开(公告)日：2022-12-27
申请号：US17044460
申请日：2019-03-05
发明人： Kenya Nishio , Suguru Saito
IPC分类号： H01L27/146 , H01L23/00
摘要： Provided is an imaging unit more efficiently manufacturable with high dimensional precision. The imaging unit includes: a sensor board including an imaging device, in which the imaging device has a plurality of pixels and allows generation of a pixel signal by receiving outside light in each of the plurality of pixels; a bonding layer including an inorganic insulating material; and a circuit board including a circuit chip and an organic insulating layer, in which a circuit chip has a signal processing circuit that performs signal processing for the pixel signal and is bonded to the sensor board through the bonding layer, and the organic insulating layer covers a vicinity of the circuit chip.
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公开(公告)号：US11130299B2
公开(公告)日：2021-09-28
申请号：US15741335
申请日：2016-07-15
发明人： Hiroshi Tazawa , Toshihiro Kurobe , Sotetsu Saito , Hiroyasu Matsugai , Hiroyuki Itou , Suguru Saito , Keiji Ohshima , Nobutoshi Fujii , Toshiaki Shiraiwa , Minoru Ishida
IPC分类号： B29D11/00 , G02B3/00 , H01L27/146 , B29C43/18 , B29C43/50
摘要： To suppress occurrence of contamination or damage to a lens. In the present technology, for example, a manufacturing apparatus allows a spacer which is thicker than a height of a lens resin portion protruded from a substrate to be adhered to the substrate. In addition, for example, in the present technology, the manufacturing apparatus molds the lens resin portion inside a through-hole formed in the substrate by using a mold frame configured with two layers of molds and, after molding the lens resin portion, in the state that one mold is adhered to the substrate, the manufacturing apparatus demolds the substrate from the other mold. The present technology can be applied to, for example, a lens-attached substrate, a stacked lens structure, a camera module, a manufacturing apparatus, a manufacturing method, an electronic apparatus, a computer, a program, a storage medium, a system, or the like.
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公开(公告)号：US11990366B2
公开(公告)日：2024-05-21
申请号：US17590257
申请日：2022-02-01
IPC分类号： H01L21/768 , H01L23/522 , H01L23/528 , H01L23/532 , H01L27/146
CPC分类号： H01L21/7682 , H01L21/76831 , H01L23/5226 , H01L23/5283 , H01L23/53295 , H01L27/14636
摘要： Provided are a semiconductor device in which an air gap structure can be formed in any desired region regardless of the layout of metallic wiring lines, a method for manufacturing the semiconductor device, and an electronic apparatus. A first wiring layer and a second wiring layer including a metallic film are stacked via a diffusion preventing film that prevents diffusion of the metallic film. The diffusion preventing film is formed by burying a second film in a large number of holes formed in a first film. At least the first wiring layer includes the metallic film, an air gap, and a protective film formed with the second film on the inner peripheral surface of the air gap, and the opening width of the air gap is equal to the opening width of the holes formed in the first film or is greater than the opening width of the holes.
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公开(公告)号：US11862662B2
公开(公告)日：2024-01-02
申请号：US17279352
申请日：2019-10-09
发明人： Sotetsu Saito , Suguru Saito , Nobutoshi Fujii
IPC分类号： H01L27/146
CPC分类号： H01L27/1469 , H01L27/14634 , H01L27/14636
摘要： Provided is an imaging device (1) including: an imaging element (10); and a semiconductor element (20, 30) provided to be opposed to the imaging element and electrically coupled to the imaging element. The semiconductor element includes: a wiring region (20A, 30A) provided in a middle portion and a peripheral region (20B, 30B) outside the wiring region; a wiring layer (22, 32) having a wiring line in the wiring region; a semiconductor substrate (21, 31) opposed to the imaging element with the wiring layer interposed therebetween and having a first surface (Sa, Sc) and a second surface (Sb, Sd) in order from a side of the wiring layer; and a polishing adjustment section (23, 33) including a material that is lower in polishing rate than a constituent material of the semiconductor substrate, the polishing adjustment section being disposed in at least a portion of the peripheral region and provided in a thickness direction of the semiconductor substrate from the second surface.
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公开(公告)号：US11616093B2
公开(公告)日：2023-03-28
申请号：US16956128
申请日：2018-12-12
发明人： Shuji Manda , Ryosuke Matsumoto , Suguru Saito , Shigehiro Ikehara , Tetsuji Yamaguchi , Shunsuke Maruyama
IPC分类号： H01L27/146
摘要： A first light receiving element according to an embodiment of the present disclosure includes a plurality of pixels, a photoelectric converter that is provided as a layer common to the plurality of pixels, and contains a compound semiconductor material, and a first electrode layer that is provided between the plurality of pixels on light incident surface side of the photoelectric converter, and has a light-shielding property.
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