公开(公告)号：US20160222506A1

公开(公告)日：2016-08-04

申请号：US15011266

申请日：2016-01-29

Applicant: SORAA, INC.

Inventor： DOUGLAS W. POCIUS ,  DERRICK S. KAMBER ,  MARK P. D'EVELYN ,  JONATHAN D. COOK

IPC: C23C16/44 ,  C01B21/06 ,  C23C16/01 ,  C23C16/30 ,  C30B7/10 ,  C30B29/40

CPC classification number: C23C16/303 ,  C01B21/0632 ,  C01P2004/60 ,  C01P2004/90 ,  C01P2006/80 ,  C23C16/01 ,  C23C16/4401 ,  C23C16/4488 ,  C30B7/105 ,  C30B29/406

Abstract: A process of preparing polycrystalline group III nitride chunks comprising the steps of (a) placing a group III metal inside a source chamber; (b) flowing a halogen-containing gas over the group III metal to form a group III metal halide; (c) contacting the group III metal halide with a nitrogen-containing gas in a deposition chamber containing a foil, the foil comprising at least one of Mo, W, Ta, Pd, Pt, Ir, or Re; (d) forming a polycrystalline group III nitride layer on the foil within the deposition chamber; (e) removing the polycrystalline group III nitride layer from the foil; and (f) comminuting the polycrystalline group III nitride layer to form the polycrystalline group III nitride chunks, wherein the removing and the comminuting are performed in any order or simultaneously.

Abstract translation: 一种制备多晶III族氮化物块的方法，包括以下步骤：（a）将III族金属放置在源室内; （b）使含卤素气体流过III族金属以形成III族金属卤化物; （c）在含有箔的沉积室中使III族金属卤化物与含氮气体接触，该箔包含Mo，W，Ta，Pd，Pt，Ir或Re中的至少一种; （d）在沉积室内的箔上形成多晶III族氮化物层; （e）从箔上去除多晶III族氮化物层; 和（f）粉碎多晶III族氮化物层以形成多晶III族氮化物块，其中除去和粉碎以任何顺序或同时进行。