公开(公告)号：US20170247812A1

公开(公告)日：2017-08-31

申请号：US15596728

申请日：2017-05-16

Applicant: SORAA, INC.

Inventor： MARK P. D'EVELYN ,  MICHAEL RAGAN KRAMES

IPC: C30B25/18 ,  H01L21/02 ,  H01L29/20 ,  C30B23/02 ,  H01L33/32 ,  H01L31/18 ,  H01L31/0304 ,  C30B29/40 ,  H01L21/78 ,  H01L33/00

CPC classification number: C30B25/18 ,  C30B23/025 ,  C30B29/406 ,  H01L21/0254 ,  H01L21/7813 ,  H01L29/04 ,  H01L29/045 ,  H01L29/2003 ,  H01L29/36 ,  H01L31/00 ,  H01L31/03044 ,  H01L31/1856 ,  H01L31/1892 ,  H01L33/0075 ,  H01L33/0079 ,  H01L33/32 ,  H01S5/3013 ,  Y02E10/544

Abstract: Techniques for processing materials for manufacture of gallium-containing nitride substrates are disclosed. More specifically, techniques for fabricating and reusing large area substrates using a combination of processing techniques are disclosed. The methods can be applied to fabricating substrates of GaN, AlN, InN, InGaN, AlGaN, and AlInGaN, and others. Such substrates can be used for a variety of applications including optoelectronic devices, lasers, light emitting diodes, solar cells, photo electrochemical water splitting and hydrogen generation, photo detectors, integrated circuits, transistors, and others.

公开(公告)号：US20160222506A1

公开(公告)日：2016-08-04

申请号：US15011266

申请日：2016-01-29

Applicant: SORAA, INC.

Inventor： DOUGLAS W. POCIUS ,  DERRICK S. KAMBER ,  MARK P. D'EVELYN ,  JONATHAN D. COOK

IPC: C23C16/44 ,  C01B21/06 ,  C23C16/01 ,  C23C16/30 ,  C30B7/10 ,  C30B29/40

CPC classification number: C23C16/303 ,  C01B21/0632 ,  C01P2004/60 ,  C01P2004/90 ,  C01P2006/80 ,  C23C16/01 ,  C23C16/4401 ,  C23C16/4488 ,  C30B7/105 ,  C30B29/406

Abstract: A process of preparing polycrystalline group III nitride chunks comprising the steps of (a) placing a group III metal inside a source chamber; (b) flowing a halogen-containing gas over the group III metal to form a group III metal halide; (c) contacting the group III metal halide with a nitrogen-containing gas in a deposition chamber containing a foil, the foil comprising at least one of Mo, W, Ta, Pd, Pt, Ir, or Re; (d) forming a polycrystalline group III nitride layer on the foil within the deposition chamber; (e) removing the polycrystalline group III nitride layer from the foil; and (f) comminuting the polycrystalline group III nitride layer to form the polycrystalline group III nitride chunks, wherein the removing and the comminuting are performed in any order or simultaneously.

Abstract translation: 一种制备多晶III族氮化物块的方法，包括以下步骤：（a）将III族金属放置在源室内; （b）使含卤素气体流过III族金属以形成III族金属卤化物; （c）在含有箔的沉积室中使III族金属卤化物与含氮气体接触，该箔包含Mo，W，Ta，Pd，Pt，Ir或Re中的至少一种; （d）在沉积室内的箔上形成多晶III族氮化物层; （e）从箔上去除多晶III族氮化物层; 和（f）粉碎多晶III族氮化物层以形成多晶III族氮化物块，其中除去和粉碎以任何顺序或同时进行。

公开(公告)号：US20160053400A1

公开(公告)日：2016-02-25

申请号：US14930170

申请日：2015-11-02

Applicant: SORAA, INC.

Inventor： MARK P. D'EVELYN ,  JAMES S. SPECK

IPC: C30B7/10 ,  C30B29/40 ,  H01L29/36 ,  H01L29/04 ,  H01L29/20 ,  H01L29/34 ,  C30B7/00 ,  H01L21/02

CPC classification number: C30B7/105 ,  C30B7/005 ,  C30B25/02 ,  C30B29/403 ,  C30B29/406 ,  H01L21/0254 ,  H01L21/02609 ,  H01L21/02645 ,  H01L21/02647 ,  H01L29/045 ,  H01L29/2003 ,  H01L29/34 ,  H01L29/36

Abstract: A large area nitride crystal, comprising gallium and nitrogen, with a non-polar or semi-polar large-area face, is disclosed, along with a method of manufacture. The crystal is useful as a substrate for a light emitting diode, a laser diode, a transistor, a photodetector, a solar cell, or for photoelectrochemical water splitting for hydrogen generation.

Abstract translation: 公开了一种包括镓和氮的具有非极性或半极性大面积面的大面积氮化物晶体以及制造方法。 该晶体可用作发光二极管，激光二极管，晶体管，光电检测器，太阳能电池或用于氢发生的光电化学水分解的衬底。

公开(公告)号：US20140213001A1

公开(公告)日：2014-07-31

申请号：US14035693

申请日：2013-09-24

Applicant: SORAA, INC.

Inventor： JAMES W. RARING ,  ERIC M. HALL ,  MARK P. D'EVELYN

IPC: H01L33/50 ,  H01L33/32

CPC classification number: H01L33/502 ,  H01L33/16 ,  H01L33/32 ,  H01L33/54 ,  H01L33/58 ,  H01L2224/48091 ,  H01L2224/48247 ,  H01L2224/73265 ,  H01L2224/92247 ,  H01L2924/01012 ,  H01L2924/01019 ,  H01L2924/0102 ,  H01L2924/01021 ,  H01L2924/01025 ,  H01L2924/01037 ,  H01L2924/01057 ,  H01L2924/01063 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01322 ,  H01L2924/09701 ,  H01L2924/12044 ,  H01L2924/00014 ,  H01L2924/00

Abstract: A packaged optical device includes a substrate having a surface region with light emitting diode devices fabricated on a semipolar or nonpolar GaN substrate. The light emitting diodes emit polarized light and are characterized by an overlapped electron wave function and a hole wave function. Phosphors within the package are excited by the polarized light and, in response, emit electromagnetic radiation of a second wavelength.

Abstract translation: 封装的光学器件包括具有在半极性或非极性GaN衬底上制造的发光二极管器件的表面区域的衬底。 发光二极管发射偏振光，其特征在于重叠的电子波函数和空穴波函数。 封装内的荧光体被偏振光激发，并且响应地发射第二波长的电磁辐射。

公开(公告)号：US20140175377A1

公开(公告)日：2014-06-26

申请号：US14191950

申请日：2014-02-27

Applicant: SORAA, INC.

Inventor： MARK P. D'EVELYN ,  ARPAN CHAKRABORTY

IPC: H01L33/50 ,  H01L33/32 ,  H01L33/04

CPC classification number: H01L33/50 ,  H01L33/32 ,  H01L33/44 ,  H01L33/46 ,  H01L33/508 ,  H01L2224/48091 ,  H01L2224/48247 ,  H01L2924/12044 ,  H01L2924/00014 ,  H01L2924/00

Abstract: A light emitting device includes a substrate having a surface region and a light emitting diode overlying the surface region. The light emitting diode is fabricated on a semipolar or nonpolar GaN containing substrate and emits electromagnetic radiation of a first wavelength. The diode includes a quantum well region characterized by an electron wave function and a hole wave function. The electron wave function and the hole wave function are substantially overlapped within a predetermined spatial region of the quantum well region. The device has a transparent phosphor overlying the light emitting diode. The phosphor is excited by the substantially polarized emission to emit electromagnetic radiation of a second wavelength.

Abstract translation: 发光器件包括具有覆盖表面区域的表面区域和发光二极管的衬底。 发光二极管制造在含有半极性或非极性GaN的衬底上并且发射第一波长的电磁辐射。 二极管包括以电子波函数和空穴波函数为特征的量子阱区域。 电子波函数和空穴波函数在量子阱区域的预定空间区域内基本上重叠。 该器件具有覆盖发光二极管的透明磷光体。 磷光体被基本上极化的发射激发以发射第二波长的电磁辐射。

公开(公告)号：US20180047868A1

公开(公告)日：2018-02-15

申请号：US15674077

申请日：2017-08-10

Applicant: SORAA, INC.

Inventor： AURELIEN J.F. DAVID ,  MARK P. D'EVELYN ,  CHRISTOPHE A. HURNI ,  NATHAN YOUNG ,  MICHAEL J. CICH

IPC: H01L33/06 ,  H01L33/32 ,  H01L33/08 ,  H01L33/14 ,  H01L33/00 ,  H01L33/02

CPC classification number: H01L33/06 ,  H01L33/007 ,  H01L33/025 ,  H01L33/04 ,  H01L33/08 ,  H01L33/145 ,  H01L33/32

Abstract: A method of forming a HI-Nitride based device comprising: (a) depositing first layers by MOCVD on a substrate, wherein the first layers comprise device layers of III-Nitride material; and (b) depositing epitaxial second layers over the first layers by at least one of sputtering, plasma deposition, pulsed laser deposition, or liquid phase epitaxy, wherein the second layers comprise III-Nitride material and define at least partially a tunnel junction.

公开(公告)号：US20170029978A1

公开(公告)日：2017-02-02

申请号：US15226552

申请日：2016-08-02

Applicant: SORAA, INC.

Inventor： MARK P. D'EVELYN ,  DIRK EHRENTRAUT ,  WENKAN JIANG ,  BRADLEY C. DOWNEY

IPC: C30B33/06 ,  C30B25/20 ,  C30B29/40 ,  H01S5/32 ,  H01L29/04 ,  H01L33/32 ,  H01L31/0304 ,  H01S5/323 ,  C30B7/10 ,  H01L29/20

CPC classification number: C30B33/06 ,  C30B7/105 ,  C30B25/02 ,  C30B25/20 ,  C30B29/406 ,  H01L29/045 ,  H01L29/2003 ,  H01L31/03044 ,  H01L33/32 ,  H01S5/3202 ,  H01S5/32341 ,  H01S2304/00 ,  Y10T428/24355

Abstract: An ultralow defect gallium-containing nitride crystal and methods of making ultralow defect gallium-containing nitride crystals are disclosed. The crystals are useful as substrates for light emitting diodes, laser diodes, transistors, photodetectors, solar cells, and photoelectrochemical water splitting for hydrogen generators.

Abstract translation: 公开了一种超低缺陷含镓氮化物晶体和制造超低缺陷含镓氮化物晶体的方法。 该晶体可用作发光二极管，激光二极管，晶体管，光电检测器，太阳能电池和用于氢发生器的光电化学水分离的基板。

公开(公告)号：US20160020284A1

公开(公告)日：2016-01-21

申请号：US14805278

申请日：2015-07-21

Applicant: SORAA, INC.

Inventor： MARK P. D'EVELYN ,  MICHAEL RAGAN KRAMES

IPC: H01L29/20 ,  H01L29/36 ,  H01L29/04

CPC classification number: C30B25/18 ,  C30B23/025 ,  C30B29/406 ,  H01L21/0254 ,  H01L21/7813 ,  H01L29/04 ,  H01L29/045 ,  H01L29/2003 ,  H01L29/36 ,  H01L31/00 ,  H01L31/03044 ,  H01L31/1856 ,  H01L31/1892 ,  H01L33/0075 ,  H01L33/0079 ,  H01L33/32 ,  H01S5/3013 ,  Y02E10/544

Abstract: Techniques for processing materials for manufacture of gallium-containing nitride substrates are disclosed. More specifically, techniques for fabricating and reusing large area substrates using a combination of processing techniques are disclosed. The methods can be applied to fabricating substrates of GaN, AlN, InN, InGaN, AlGaN, and AlInGaN, and others. Such substrates can be used for a variety of applications including optoelectronic devices, lasers, light emitting diodes, solar cells, photo electrochemical water splitting and hydrogen generation, photo detectors, integrated circuits, transistors, and others.

Abstract translation: 公开了用于制造含镓氮化物衬底的材料的技术。 更具体地，公开了使用处理技术的组合来制造和重用大面积基板的技术。 该方法可以应用于制造GaN，AlN，InN，InGaN，AlGaN和AlInGaN等的衬底。 这种基板可用于各种应用，包括光电器件，激光器，发光二极管，太阳能电池，光电化学水分解和氢气生成，光电检测器，集成电路，晶体管等。

公开(公告)号：US20140147650A1

公开(公告)日：2014-05-29

申请号：US14089281

申请日：2013-11-25

Applicant: SORAA, INC.

Inventor： WENKAN JIANG ,  MARK P. D'EVELYN ,  DERRICK S. KAMBER ,  DIRK EHRENTRAUT ,  MICHAEL KRAMES

IPC: H01L29/20

CPC classification number: H01L21/0254 ,  C30B7/105 ,  C30B29/403 ,  H01L21/0237 ,  H01L21/02458 ,  H01L21/02642 ,  H01L21/02647 ,  H01L33/0075

Abstract: High quality ammonothermal group III metal nitride crystals having a pattern of locally-approximately-linear arrays of threading dislocations, methods of manufacturing high quality ammonothermal group III metal nitride crystals, and methods of using such crystals are disclosed. The crystals are useful for seed bulk crystal growth and as substrates for light emitting diodes, laser diodes, transistors, photodetectors, solar cells, and for photoelectrochemical water splitting for hydrogen generation devices.

Abstract translation: 公开了具有局部近似线性的穿透位错阵列的高品质氨热III族金属氮化物晶体，制造高品质氨热III族金属氮化物晶体的方法，以及使用这种晶体的方法。 该晶体可用于种子块状晶体生长，并且用作发光二极管，激光二极管，晶体管，光电探测器，太阳能电池和用于氢发生器件的光电化学水分解的衬底。

公开(公告)号：US20130251615A1

公开(公告)日：2013-09-26

申请号：US13894220

申请日：2013-05-14

Applicant: SORAA, INC.

Inventor： MARK P. D'EVELYN ,  DERRICK S. KAMBER

IPC: C01B21/06

CPC classification number: C01B21/0632 ,  C30B7/10 ,  C30B9/00 ,  C30B28/06 ,  C30B29/403

Abstract: A gettered polycrystalline group III metal nitride is formed by heating a group III metal with an added getter in a nitrogen-containing gas. Most of the residual oxygen in the gettered polycrystalline nitride is chemically bound by the getter. The gettered polycrystalline group III metal nitride is useful as a raw material for ammonothermal growth of bulk group III nitride crystals.

Abstract translation: 通过在含氮气体中加入吸附剂来加热第III族金属，形成一种浸渍的多晶III族金属氮化物。 吸收的多晶氮化物中的大部分残余氧被吸气剂化学结合。 浸渍的多晶III族金属氮化物可用作本体III族氮化物晶体的氨热生长的原料。