公开(公告)号：US20160222506A1

公开(公告)日：2016-08-04

申请号：US15011266

申请日：2016-01-29

Applicant: SORAA, INC.

Inventor： DOUGLAS W. POCIUS ,  DERRICK S. KAMBER ,  MARK P. D'EVELYN ,  JONATHAN D. COOK

IPC: C23C16/44 ,  C01B21/06 ,  C23C16/01 ,  C23C16/30 ,  C30B7/10 ,  C30B29/40

CPC classification number: C23C16/303 ,  C01B21/0632 ,  C01P2004/60 ,  C01P2004/90 ,  C01P2006/80 ,  C23C16/01 ,  C23C16/4401 ,  C23C16/4488 ,  C30B7/105 ,  C30B29/406

Abstract: A process of preparing polycrystalline group III nitride chunks comprising the steps of (a) placing a group III metal inside a source chamber; (b) flowing a halogen-containing gas over the group III metal to form a group III metal halide; (c) contacting the group III metal halide with a nitrogen-containing gas in a deposition chamber containing a foil, the foil comprising at least one of Mo, W, Ta, Pd, Pt, Ir, or Re; (d) forming a polycrystalline group III nitride layer on the foil within the deposition chamber; (e) removing the polycrystalline group III nitride layer from the foil; and (f) comminuting the polycrystalline group III nitride layer to form the polycrystalline group III nitride chunks, wherein the removing and the comminuting are performed in any order or simultaneously.

Abstract translation: 一种制备多晶III族氮化物块的方法，包括以下步骤：（a）将III族金属放置在源室内; （b）使含卤素气体流过III族金属以形成III族金属卤化物; （c）在含有箔的沉积室中使III族金属卤化物与含氮气体接触，该箔包含Mo，W，Ta，Pd，Pt，Ir或Re中的至少一种; （d）在沉积室内的箔上形成多晶III族氮化物层; （e）从箔上去除多晶III族氮化物层; 和（f）粉碎多晶III族氮化物层以形成多晶III族氮化物块，其中除去和粉碎以任何顺序或同时进行。

公开(公告)号：US20150132926A1

公开(公告)日：2015-05-14

申请号：US14599335

申请日：2015-01-16

Applicant: SORAA, INC.

Inventor： MARK P. D'EVELYN ,  DIRK EHRENTRAUT ,  DERRICK S. KAMBER ,  BRADLEY C. DOWNEY

IPC: C30B7/10 ,  H01L21/02 ,  C30B29/40

CPC classification number: C30B7/105 ,  B01J3/008 ,  B01J3/042 ,  B01J3/065 ,  B01J2203/0665 ,  B01J2203/068 ,  B30B11/002 ,  C30B29/406 ,  H01L21/02035 ,  H01L21/02389

Abstract: Large-scale manufacturing of gallium nitride boules using m-plane or wedge-shaped seed crystals can be accomplished using ammonothermal growth methods. Large-area single crystal seed plates are suspended in a rack, placed in a large diameter autoclave or internally-heated high pressure apparatus along with ammonia and a mineralizer, and crystals are grown ammonothermally. The orientation of the m-plane or wedge-shaped seed crystals are chosen to provide efficient utilization of the seed plates and of the volume inside the autoclave or high pressure apparatus.

Abstract translation: 使用m-平面或楔形晶种进行大规模制造氮化镓颗粒可以使用氨热生长方法进行。 将大面积单晶种子板悬挂在机架中，与氨和矿化剂一起放置在大直径的高压釜或内部加热的高压装置中，并将水晶进行氨水生长。 选择m平面或楔形晶种的取向以提供有效利用种子板和高压釜或高压装置内的体积。

公开(公告)号：US20140147650A1

公开(公告)日：2014-05-29

申请号：US14089281

申请日：2013-11-25

Applicant: SORAA, INC.

Inventor： WENKAN JIANG ,  MARK P. D'EVELYN ,  DERRICK S. KAMBER ,  DIRK EHRENTRAUT ,  MICHAEL KRAMES

IPC: H01L29/20

CPC classification number: H01L21/0254 ,  C30B7/105 ,  C30B29/403 ,  H01L21/0237 ,  H01L21/02458 ,  H01L21/02642 ,  H01L21/02647 ,  H01L33/0075

Abstract: High quality ammonothermal group III metal nitride crystals having a pattern of locally-approximately-linear arrays of threading dislocations, methods of manufacturing high quality ammonothermal group III metal nitride crystals, and methods of using such crystals are disclosed. The crystals are useful for seed bulk crystal growth and as substrates for light emitting diodes, laser diodes, transistors, photodetectors, solar cells, and for photoelectrochemical water splitting for hydrogen generation devices.

Abstract translation: 公开了具有局部近似线性的穿透位错阵列的高品质氨热III族金属氮化物晶体，制造高品质氨热III族金属氮化物晶体的方法，以及使用这种晶体的方法。 该晶体可用于种子块状晶体生长，并且用作发光二极管，激光二极管，晶体管，光电探测器，太阳能电池和用于氢发生器件的光电化学水分解的衬底。

公开(公告)号：US20130251615A1

公开(公告)日：2013-09-26

申请号：US13894220

申请日：2013-05-14

Applicant: SORAA, INC.

Inventor： MARK P. D'EVELYN ,  DERRICK S. KAMBER

IPC: C01B21/06

CPC classification number: C01B21/0632 ,  C30B7/10 ,  C30B9/00 ,  C30B28/06 ,  C30B29/403

Abstract: A gettered polycrystalline group III metal nitride is formed by heating a group III metal with an added getter in a nitrogen-containing gas. Most of the residual oxygen in the gettered polycrystalline nitride is chemically bound by the getter. The gettered polycrystalline group III metal nitride is useful as a raw material for ammonothermal growth of bulk group III nitride crystals.

Abstract translation: 通过在含氮气体中加入吸附剂来加热第III族金属，形成一种浸渍的多晶III族金属氮化物。 吸收的多晶氮化物中的大部分残余氧被吸气剂化学结合。 浸渍的多晶III族金属氮化物可用作本体III族氮化物晶体的氨热生长的原料。