公开(公告)号：US20240096616A1

公开(公告)日：2024-03-21

申请号：US18232313

申请日：2023-08-09

Applicant: SPTS Technologies Limited

Inventor： Matt Edmonds ,  William Royle ,  Caitlin Lane Jones ,  Daniel Gomez-Sanchez ,  Kathrine Crook

IPC: H01L21/02 ,  C23C16/52 ,  H01J37/32 ,  H01L23/498

CPC classification number: H01L21/02274 ,  C23C16/52 ,  H01J37/32165 ,  H01L21/02164 ,  H01L21/0217 ,  H01L21/02211 ,  H01L21/02216 ,  H01L23/49894 ,  H01J2237/3321

Abstract: Silicon dioxide can be deposited onto a substrate by plasma enhanced chemical vapour deposition (PECVD). The substrate includes at least one silicon dioxide layer deposited thereon. A plasma enhanced chemical vapour deposition apparatus can be used to deposit silicon dioxide onto a substrate by plasma enhanced chemical vapour deposition.