公开(公告)号：US20240096616A1

公开(公告)日：2024-03-21

申请号：US18232313

申请日：2023-08-09

Applicant: SPTS Technologies Limited

Inventor： Matt Edmonds ,  William Royle ,  Caitlin Lane Jones ,  Daniel Gomez-Sanchez ,  Kathrine Crook

IPC: H01L21/02 ,  C23C16/52 ,  H01J37/32 ,  H01L23/498

CPC classification number: H01L21/02274 ,  C23C16/52 ,  H01J37/32165 ,  H01L21/02164 ,  H01L21/0217 ,  H01L21/02211 ,  H01L21/02216 ,  H01L23/49894 ,  H01J2237/3321

Abstract: Silicon dioxide can be deposited onto a substrate by plasma enhanced chemical vapour deposition (PECVD). The substrate includes at least one silicon dioxide layer deposited thereon. A plasma enhanced chemical vapour deposition apparatus can be used to deposit silicon dioxide onto a substrate by plasma enhanced chemical vapour deposition.

公开(公告)号：US12077863B2

公开(公告)日：2024-09-03

申请号：US18372123

申请日：2023-09-24

Applicant: SPTS Technologies Limited

Inventor： Stephen Burgess ,  Kathrine Crook ,  Daniel Archard ,  William Royle ,  Euan Alasdair Morrison

IPC: C23C16/40 ,  C23C16/455 ,  C23C16/513

CPC classification number: C23C16/513 ,  C23C16/455

Abstract: A capacitively coupled Plasma Enhanced Chemical Vapour Deposition (PE-CVD) apparatus has a chamber, a first electrode with a substrate support positioned in the chamber, a second electrode with a gas inlet structure positioned in the chamber, and an RF power source connected to the gas inlet structure for supplying RF power thereto. The gas inlet structure has an edge region, a central region which depends downwardly with respect to the edge region, and one or more precursor gas inlets for introducing a PE-CVD precursor gas mixture to the chamber. The edge region and the central region both constitute part of the second electrode. The precursor gas inlets are disposed in the edge region and the central region is spaced apart from the substrate support to define a plasma dark space channel.

公开(公告)号：US11802341B2

公开(公告)日：2023-10-31

申请号：US17144699

申请日：2021-01-08

Applicant: SPTS Technologies Limited

Inventor： Stephen Burgess ,  Kathrine Crook ,  Daniel Archard ,  William Royle ,  Euan Alasdair Morrison

IPC: C23C16/40 ,  C23C16/513 ,  C23C16/455

CPC classification number: C23C16/513 ,  C23C16/455

Abstract: A capacitively coupled Plasma Enhanced Chemical Vapour Deposition (PE-CVD) apparatus has a chamber, a first electrode with a substrate support positioned in the chamber, a second electrode with a gas inlet structure positioned in the chamber, and an RF power source connected to the gas inlet structure for supplying RF power thereto. The gas inlet structure has an edge region, a central region which depends downwardly with respect to the edge region, and one or more precursor gas inlets for introducing a PE-CVD precursor gas mixture to the chamber. The edge region and the central region both constitute part of the second electrode. The precursor gas inlets are disposed in the edge region and the central region is spaced apart from the substrate support to define a plasma dark space channel.