公开(公告)号：US20150357398A1

公开(公告)日：2015-12-10

申请号：US14733559

申请日：2015-06-08

Applicant: SPTS TECHNOLOGIES LIMITED

Inventor： KATHERINE CROOK ,  STEPHEN R BURGESS

IPC: H01L49/02 ,  H01L21/02

CPC classification number: H01L28/40 ,  C23C14/10 ,  C23C16/401 ,  C23C16/45523 ,  C23C28/04 ,  H01L21/02118 ,  H01L21/02164 ,  H01L21/02214 ,  H01L21/02274 ,  H01L23/3192 ,  H01L23/562 ,  H01L2924/0002 ,  H01L2924/00

Abstract: A substrate having a dielectric film thereon, in which: the dielectric film comprises at least four stacked layers of a dielectric material; the stacked layers comprise compressive layers which are subject to a compressive stress, and tensile layers which are subject to a tensile stress; and there are at least two spaced apart tensile layers which are each adjacent to one or more compressive layers.

Abstract translation: 一种其上具有电介质膜的衬底，其中：所述电介质膜包括至少四层电介质材料层叠体; 堆叠层包括经受压应力的压缩层和承受拉应力的拉伸层; 并且存在至少两个间隔开的拉伸层，每个拉伸层各自邻近一个或多个压缩层。

公开(公告)号：US20160265108A1

公开(公告)日：2016-09-15

申请号：US15064631

申请日：2016-03-09

Applicant: SPTS Technologies Limited

Inventor： DANIEL T. ARCHARD ,  STEPHEN R. BURGESS ,  MARK I. CARRUTHERS ,  ANDREW PRICE ,  KEITH E. BUCHANAN ,  KATHERINE CROOK

IPC: C23C16/455 ,  C23C16/513

CPC classification number: C23C16/455 ,  C23C16/513 ,  H01J37/32633 ,  H01J37/32834

Abstract: A plasma-enhanced chemical vapour deposition (PE-CVD) apparatus includes a chamber including a circumferential pumping channel, a substrate support disposed within the chamber, one or more gas inlets for introducing gas into the chamber, a plasma production device for producing a plasma in the chamber, and an upper and a lower element positioned in the chamber. The upper element is spaced apart from the substrate support to confine the plasma and to define a first circumferential pumping gap, and the upper element acts as a radially inward wall of the circumferential pumping channel. The upper and lower elements are radially spaced apart to define a second circumferential pumping gap which acts as an entrance to the circumferential pumping channel, in which the second circumferential pumping gap is wider than the first circumferential pumping gap.

Abstract translation: 等离子体增强化学气相沉积（PE-CVD）装置包括：腔室，包括圆周泵浦通道，设置在腔室内的衬底支撑件，用于将气体引入腔室的一个或多个气体入口;用于产生等离子体的等离子体生产装置 在腔室中，以及位于腔室中的上部和下部元件。 上部元件与衬底支撑件间隔开以限制等离子体并且限定第一周向泵送间隙，并且上部元件用作圆周泵送通道的径向向内的壁。 上部和下部元件径向间隔开以限定作为周向泵送通道入口的第二圆周泵送间隙，其中第二圆周泵送间隙比第一圆周泵送间隙宽。