公开(公告)号：US11545394B2

公开(公告)日：2023-01-03

申请号：US17094759

申请日：2020-11-10

Applicant: SPTS Technologies Limited

Inventor： Matthew Michael Day ,  Samira Binte Kazemi

IPC: H01L21/02 ,  H01L21/78 ,  H01L21/67 ,  H01L21/683 ,  H01L21/3065 ,  H01L21/3105 ,  H01L21/311

Abstract: A semiconductor wafer dicing process is disclosed for dicing a wafer into individual dies. Scribe lines are formed within a polymer coating to expose regions of wafer to form a pre-processed product. The pre-processed product within the chamber is plasma etched to remove the exposed regions of the wafer to separate the individual dies and form a processed product. A frame cover is then removed and the processed product, wafer frame and adhesive tape are exposed to an oxygen plasma within the chamber to partially remove an outermost region of the polymer coating, which is most heavily contaminated with fluorine, to leave a residual polymer coating on the individual dies and form a post-processed product. The residual polymer coating on the individual dies of the post-processed product is then removed.

公开(公告)号：US20210183703A1

公开(公告)日：2021-06-17

申请号：US17094759

申请日：2020-11-10

Applicant: SPTS Technologies Limited

Inventor： Matthew Michael Day ,  Samira Binte Kazemi

IPC: H01L21/78 ,  H01L21/683 ,  H01L21/67

Abstract: A semiconductor wafer dicing process is disclosed for dicing a wafer into individual dies. Scribe lines are formed within a polymer coating to expose regions of wafer to form a pre-processed product. The pre-processed product within the chamber is plasma etched to remove the exposed regions of the wafer to separate the individual dies and form a processed product. A frame cover is then removed and the processed product, wafer frame and adhesive tape are exposed to an oxygen plasma within the chamber to partially remove an outermost region of the polymer coating, which is most heavily contaminated with fluorine, to leave a residual polymer coating on the individual dies and form a post-processed product. The residual polymer coating on the individual dies of the post-processed product is then removed.

公开(公告)号：US20240128066A1

公开(公告)日：2024-04-18

申请号：US18374626

申请日：2023-09-28

Applicant: SPTS Technologies Limited

Inventor： Roland Mumford ,  Matthew Michael Day

IPC: H01J37/32 ,  H01L21/3065 ,  H01L21/66

CPC classification number: H01J37/32935 ,  H01J37/321 ,  H01J37/3244 ,  H01J37/32715 ,  H01L21/3065 ,  H01L22/12 ,  H01L22/26 ,  H01J2237/334

Abstract: An apparatus for thinning and reducing the surface roughness of a substrate, a method for thinning and reducing the surface roughness of a substrate and a method of reducing the thickness of a substrate are provided herein. The generated etch routine that will provide the target variation in thickness of the substrate and a target average substrate thickness is based on the measured variation in thickness and the measured average substrate thickness of the substrate.