公开(公告)号：US09225297B2

公开(公告)日：2015-12-29

申请号：US14375164

申请日：2013-02-19

Applicant: ST-Ericsson SA

Inventor： Vincent Knopik

IPC: H03F1/52 ,  H03F3/191 ,  H03F3/24 ,  H03F3/19

CPC classification number: H03F1/52 ,  H03F3/19 ,  H03F3/191 ,  H03F3/245 ,  H03F2200/21 ,  H03F2200/444 ,  H03F2200/468 ,  H03F2200/471

Abstract: A protection module (4) for a RF-amplifier (2) is efficient against overvoltage due to load impedance mismatch when said RF-amplifier is connected to a load RF-element (3). The protection module comprises a branch with at least one diode-like operating component (D1, D2, . . . , Dn) and a resistor (R2) which starts conducting when a RF-signal on a transmission link (6) between the RF-amplifier and the load RF-element is higher than a threshold set by the diode-like operating component. Such protection may be implemented in MOS technology only.

Abstract translation: 当所述RF放大器连接到负载RF元件（3）时，用于RF放大器（2）的保护模块（4）由于负载阻抗失配而有效地抵抗过电压。 该保护模块包括具有至少一个二极管状工作组件（D1，D2，...，Dn）和一个电阻器（R2）的分支，该电阻器（R2）在RF之间的传输链路（6）上的RF信号时开始传导， 放大器和负载RF元件高于由二极管状操作部件设置的阈值。 这种保护可以仅在MOS技术中实现。

公开(公告)号：US20140256274A1

公开(公告)日：2014-09-11

申请号：US14353655

申请日：2012-10-17

Applicant: ST-Ericsson SA

Inventor： Vincent Knopik

IPC: H04B1/44

CPC classification number: H04B1/44 ,  H04B1/0458 ,  H04B1/406

Abstract: There is described a RF front end circuit comprising: a common impedance matching network (4) connected to an output terminal (5), a first power amplifier (1), PA, arranged to drive power to the output terminal through the common impedance matching network, a second PA (2) adapted to drive power to the output terminal through the common impedance matching network and a second impedance matching network (12), a reference terminal (9, 92) at a reference voltage (Vdd2), the second impedance matching network comprising at least a first connection path to the reference terminal, a second connection path to the second PA and a third connection path to the common impedance matching network, wherein, the second impedance matching network comprises a first impedance switch (SI1) configured to open the first connection path responsive to the second PA being put into an OFF state.

Abstract translation: 描述了一种RF前端电路，包括：连接到输出端子（5）的公共阻抗匹配网络（4），第一功率放大器（1），PA，布置成通过公共阻抗匹配来向输出端子驱动电力 网络，适于通过公共阻抗匹配网络向第二输出端子驱动电力的第二PA（2）和第二阻抗匹配网络（12），参考电压（Vdd2）的参考端子（9,92），第二阻抗匹配网络 阻抗匹配网络，包括至少到参考终端的第一连接路径，到第二PA的第二连接路径和到公共阻抗匹配网络的第三连接路径，其中，第二阻抗匹配网络包括第一阻抗开关（SI1） 被配置为响应于所述第二PA被置于OFF状态来打开所述第一连接路径。

公开(公告)号：US09590689B2

公开(公告)日：2017-03-07

申请号：US14353655

申请日：2012-10-17

Applicant: ST-Ericsson SA

Inventor： Vincent Knopik

IPC: H04B1/44 ,  H04B1/04 ,  H04B1/403

CPC classification number: H04B1/44 ,  H04B1/0458 ,  H04B1/406

Abstract: An RF front end circuit has a common impedance matching network connected to an output terminal, a first power amplifier arranged to drive power to the output terminal through the common impedance matching network, a second power amplifier adapted to drive power to the output terminal through the common impedance matching network, a second impedance matching network, and a reference terminal at a reference voltage. The second impedance matching network has at least a first connection path to the reference terminal, a second connection path to the second power amplifier and a third connection path to the common impedance matching network. The second impedance matching network also includes a first impedance switch configured to open the first connection path responsive to the second power amplifier being put into an OFF state.

Abstract translation: RF前端电路具有连接到输出端子的公共阻抗匹配网络，布置成通过公共阻抗匹配网络向输出端子驱动电力的第一功率放大器，适于通过所述公共阻抗匹配网络向输出端子驱动功率的第二功率放大器 公共阻抗匹配网络，第二阻抗匹配网络和参考电压的参考端子。 第二阻抗匹配网络具有至少到参考终端的第一连接路径，到第二功率放大器的第二连接路径和到公共阻抗匹配网络的第三连接路径。 第二阻抗匹配网络还包括第一阻抗开关，其被配置为响应于第二功率放大器处于断开状态而打开第一连接路径。

公开(公告)号：US20140300421A1

公开(公告)日：2014-10-09

申请号：US14113295

申请日：2012-05-01

Applicant: ST-Ericsson SA

Inventor： Vincent Knopik

IPC: H03F3/193 ,  H03F3/24

CPC classification number: H03F3/193 ,  H01L27/0251 ,  H03F1/0261 ,  H03F1/223 ,  H03F1/3205 ,  H03F1/52 ,  H03F1/523 ,  H03F3/19 ,  H03F3/245 ,  H03F2200/18 ,  H03F2200/27 ,  H03F2200/451 ,  H03F2200/471

Abstract: A Power amplifier circuit based on a cascode structure and to be powered by a power source voltage, e.g. a battery, said circuit comprising—a first transistor having a grid, source and drain terminal; said first transistor being connected in a common source mode;—a second grid source transistor having grid, source and drain terminal, said second transistor being connected in common grid mode;—a biasing circuit for biasing said first transistor and said second transistor. The PA is characterized in that it includes a circuit for sensing the value of the power source voltage and for generating at least a first and a second biasing voltage for the grid of said second transistor in accordance with the power source voltage sensed, said first biasing voltage providing substantially equal protection to said first and second transistors when said power source voltage is sensed to be at a high voltage and said second biasing voltage providing more voltage to said first transistor when said power source voltage is sensed to be at a low voltage.

Abstract translation: 基于共源共栅结构并由电源电压供电的功率放大器电路，例如， 电池，所述电路包括：具有栅极，源极和漏极端子的第一晶体管; 所述第一晶体管以公共源模式连接; - 具有栅极，源极和漏极端子的第二栅极源晶体管，所述第二晶体管以公共栅格模式连接; - 偏置电路，用于偏置所述第一晶体管和所述第二晶体管。 PA的特征在于，其包括用于感测电源电压的值的电路，并且用于根据感测的电源电压产生用于所述第二晶体管的电网的至少第一和第二偏置电压，所述第一偏置 当所述电源电压被感测为高电压时，所述电压提供与所述第一和第二晶体管基本相同的保护，并且当所述电源电压被感测为低电压时，所述第二偏置电压向所述第一晶体管提供更多的电压。

公开(公告)号：US20140368280A1

公开(公告)日：2014-12-18

申请号：US14375164

申请日：2013-02-19

Applicant: ST-Ericsson SA

Inventor： Vincent Knopik

IPC: H03F1/52 ,  H03F3/19

CPC classification number: H03F1/52 ,  H03F3/19 ,  H03F3/191 ,  H03F3/245 ,  H03F2200/21 ,  H03F2200/444 ,  H03F2200/468 ,  H03F2200/471

Abstract: A protection module (4) for a RF-amplifier (2) is efficient against overvoltage due to load impedance mismatch when said RF-amplifier is connected to a load RF-element (3). The protection module comprises a branch with at least one diode-like operating component (D1, D2, . . . , Dn) and a resistor (R2) which starts conducting when a RF-signal on a transmission link (6) between the RF-amplifier and the load RF-element is higher than a threshold set by the diode-like operating component. Such protection may be implemented in MOS technology only.

Abstract translation: 当所述RF放大器连接到负载RF元件（3）时，用于RF放大器（2）的保护模块（4）由于负载阻抗失配而有效地抵抗过电压。 该保护模块包括具有至少一个二极管状工作组件（D1，D2，...，Dn）和一个电阻器（R2）的分支，该电阻器（R2）在RF之间的传输链路（6）上的RF信号时开始传导， 放大器和负载RF元件高于由二极管状操作部件设置的阈值。 这种保护可以仅在MOS技术中实现。