公开(公告)号：US09257411B2

公开(公告)日：2016-02-09

申请号：US14265782

申请日：2014-04-30

Applicant: STATS ChipPAC, Ltd.

Inventor： Reza A. Pagaila ,  Yaojian Lin ,  JunMo Koo

IPC: H01L23/00 ,  H01L25/065 ,  H01L21/56 ,  H01L23/367 ,  H01L23/538 ,  H01L23/498 ,  H01L23/522 ,  H01L23/31

CPC classification number: H01L23/5389 ,  H01L21/568 ,  H01L23/3128 ,  H01L23/3677 ,  H01L24/19 ,  H01L24/48 ,  H01L24/96 ,  H01L24/97 ,  H01L2221/68359 ,  H01L2224/0401 ,  H01L2224/04105 ,  H01L2224/12105 ,  H01L2224/16225 ,  H01L2224/1703 ,  H01L2224/20 ,  H01L2224/48091 ,  H01L2224/73265 ,  H01L2224/97 ,  H01L2924/00014 ,  H01L2924/01004 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01029 ,  H01L2924/0103 ,  H01L2924/01033 ,  H01L2924/01047 ,  H01L2924/01073 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/01322 ,  H01L2924/014 ,  H01L2924/09701 ,  H01L2924/12041 ,  H01L2924/12042 ,  H01L2924/1306 ,  H01L2924/13091 ,  H01L2924/14 ,  H01L2924/181 ,  H01L2224/82 ,  H01L2924/00 ,  H01L2924/00012 ,  H01L2224/45099 ,  H01L2224/45015 ,  H01L2924/207

Abstract: A semiconductor device has a semiconductor die with a plurality of bumps formed over a surface of the first semiconductor die. A penetrable adhesive layer is formed over a temporary carrier. The adhesive layer can include a plurality of slots. The semiconductor die is mounted to the carrier by embedding the bumps into the penetrable adhesive layer. The semiconductor die and interconnect structure can be separated by a gap. An encapsulant is deposited over the first semiconductor die. The bumps embedded into the penetrable adhesive layer reduce shifting of the first semiconductor die while depositing the encapsulant. The carrier is removed. An interconnect structure is formed over the semiconductor die. The interconnect structure is electrically connected to the bumps. A thermally conductive bump is formed over the semiconductor die, and a heat sink is mounted to the interconnect structure and thermally connected to the thermally conductive bump.

Abstract translation: 半导体器件具有形成在第一半导体管芯的表面上的多个凸点的半导体管芯。 在临时载体上形成可穿透的粘合剂层。 粘合剂层可以包括多个槽。 通过将凸块嵌入到可穿透的粘合剂层中，将半导体管芯安装到载体上。 半导体管芯和互连结构可以通过间隙分开。 密封剂沉积在第一半导体管芯上。 嵌入可渗透粘合剂层中的凸起减少了第一半导体管芯的移动，同时沉积密封剂。 载体被移除。 在半导体管芯上形成互连结构。 互连结构电连接到凸块。 导热凸块形成在半导体管芯上，并且散热器安装到互连结构并热连接到导热凸块。

公开(公告)号：US20140231989A1

公开(公告)日：2014-08-21

申请号：US14265782

申请日：2014-04-30

Applicant: STATS ChipPAC, Ltd.

Inventor： Reza A. Pagaila ,  Yaojian Lin ,  JunMo Koo

IPC: H01L25/065 ,  H01L23/498 ,  H01L23/00 ,  H01L23/522

CPC classification number: H01L23/5389 ,  H01L21/568 ,  H01L23/3128 ,  H01L23/3677 ,  H01L24/19 ,  H01L24/48 ,  H01L24/96 ,  H01L24/97 ,  H01L2221/68359 ,  H01L2224/0401 ,  H01L2224/04105 ,  H01L2224/12105 ,  H01L2224/16225 ,  H01L2224/1703 ,  H01L2224/20 ,  H01L2224/48091 ,  H01L2224/73265 ,  H01L2224/97 ,  H01L2924/00014 ,  H01L2924/01004 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01029 ,  H01L2924/0103 ,  H01L2924/01033 ,  H01L2924/01047 ,  H01L2924/01073 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/01322 ,  H01L2924/014 ,  H01L2924/09701 ,  H01L2924/12041 ,  H01L2924/12042 ,  H01L2924/1306 ,  H01L2924/13091 ,  H01L2924/14 ,  H01L2924/181 ,  H01L2224/82 ,  H01L2924/00 ,  H01L2924/00012 ,  H01L2224/45099 ,  H01L2224/45015 ,  H01L2924/207

Abstract: A semiconductor device has a semiconductor die with a plurality of bumps formed over a surface of the first semiconductor die. A penetrable adhesive layer is formed over a temporary carrier. The adhesive layer can include a plurality of slots. The semiconductor die is mounted to the carrier by embedding the bumps into the penetrable adhesive layer. The semiconductor die and interconnect structure can be separated by a gap. An encapsulant is deposited over the first semiconductor die. The bumps embedded into the penetrable adhesive layer reduce shifting of the first semiconductor die while depositing the encapsulant. The carrier is removed. An interconnect structure is formed over the semiconductor die. The interconnect structure is electrically connected to the bumps. A thermally conductive bump is formed over the semiconductor die, and a heat sink is mounted to the interconnect structure and thermally connected to the thermally conductive bump.

Abstract translation: 半导体器件具有形成在第一半导体管芯的表面上的多个凸点的半导体管芯。 在临时载体上形成可穿透的粘合剂层。 粘合剂层可以包括多个槽。 通过将凸块嵌入到可穿透的粘合剂层中，将半导体管芯安装到载体上。 半导体管芯和互连结构可以通过间隙分开。 密封剂沉积在第一半导体管芯上。 嵌入可渗透粘合剂层中的凸起减少了第一半导体管芯的移动，同时沉积密封剂。 载体被移除。 在半导体管芯上形成互连结构。 互连结构电连接到凸块。 导热凸块形成在半导体管芯上，并且散热器安装到互连结构并热连接到导热凸块。