METHOD FOR THE SURFACE TREATMENT OF A SEMICONDUCTOR SUBSTRATE
    3.
    发明申请
    METHOD FOR THE SURFACE TREATMENT OF A SEMICONDUCTOR SUBSTRATE 审中-公开
    半导体衬底的表面处理方法

    公开(公告)号:US20160203973A1

    公开(公告)日:2016-07-14

    申请号:US15077671

    申请日:2016-03-22

    Abstract: To apply an anti-wetting coating to a substrate of a semiconductor material, a method includes applying to a support a solution of a hydrocarbon comprising at least one unsaturated bond and, optionally, at least one hetero-atom for obtaining a layer of hydrocarbons. The method also includes treating at least one surface of the substrate of the semiconductor material with an acid. The layer of hydrocarbons is transferred from the support to the surface of the substrate of the semiconductor material. The layer of hydrocarbons is chemically coupled with the surface of the substrate of the semiconductor material.

    Abstract translation: 为了将抗湿润涂层施加到半导体材料的基底上,一种方法包括向载体施加包含至少一个不饱和键的烃的溶液和任选的至少一个杂原子以获得一层烃。 该方法还包括用酸处理半导体材料的衬底的至少一个表面。 烃层从载体转移到半导体材料的衬底表面。 烃层与半导体材料的衬底的表面化学偶联。

    INTEGRATED GAS SENSOR DEVICE, IN PARTICULAR FOR DETECTING CARBON MONOXIDE (CO)
    4.
    发明申请
    INTEGRATED GAS SENSOR DEVICE, IN PARTICULAR FOR DETECTING CARBON MONOXIDE (CO) 有权
    集成气体传感器装置,特别是用于检测一氧化碳(CO)

    公开(公告)号:US20150001076A1

    公开(公告)日:2015-01-01

    申请号:US14318321

    申请日:2014-06-27

    CPC classification number: G01N27/26 G01N27/4045 G01N33/0027

    Abstract: It is described an integrated gas sensor device comprising a silicon substrate and an oxide layer on the silicon substrate, as well as a working electrode, a counter electrode and a reference electrode, on the oxide layer, the working electrode and the counter electrode having respective active area exposed to an environmental air through at least a plurality of first openings and a plurality of second openings in the oxide layer in correspondence of the working electrode and of the counter electrode, further comprising an electrolyte layer portion and a hydrogel layer portion on the electrolyte layer portion, the electrolyte and hydrogel layer portions having a same size, suitable to cover at least the working, counter and reference electrodes, the hydrogel layer portion acting as a “quasi solid state” water reservoir.

    Abstract translation: 描述了一种集成气体传感器装置,其包括在硅衬底上的硅衬底和氧化物层,以及在氧化物层上的工作电极,对电极和参考电极,工作电极和对电极具有相应的 活性区域通过工作电极和对电极的对应于氧化物层中的至少多个第一开口和多个第二开口暴露于环境空气,还包括电解质层部分和水凝胶层部分 电解质层部分,电解质和水凝胶层部分具有相同的尺寸,适合于至少覆盖工作电极,反作用电极和参比电极,水凝胶层部分用作“准固态”储水器。

    Method for the surface treatment of a semiconductor substrate

    公开(公告)号:US09981471B2

    公开(公告)日:2018-05-29

    申请号:US15176876

    申请日:2016-06-08

    Inventor: Fabrizio Porro

    CPC classification number: B41J2/1433 B41J2/1606 B41J2/162 B41J2/164

    Abstract: The present disclosure relates to a method for the application of an antiwetting coating on at least one surface of a substrate of semiconductor material comprising the steps of: a) applying on said at least one surface a metal layer of a material chosen in the group constituted by noble metals, coining metals, their oxides and their alloys; and b) applying on said metal layer a layer of a thiol of formula R—SH, where R is a linear alkyl chain having from 3 to 20 carbon atoms and, optionally, at least one hetero-atom, for obtaining an antiwetting coating. The disclosure further regards a method for the production of a nozzle plate for ink-jet printing and to an integrated ink-jet printhead provided with a nozzle plate obtained according to the method of the disclosure.

    METHOD FOR THE SURFACE TREATMENT OF A SEMICONDUCTOR SUBSTRATE

    公开(公告)号:US20170182768A1

    公开(公告)日:2017-06-29

    申请号:US15176876

    申请日:2016-06-08

    Inventor: Fabrizio Porro

    CPC classification number: B41J2/1433 B41J2/1606 B41J2/162 B41J2/164

    Abstract: The present disclosure relates to a method for the application of an antiwetting coating on at least one surface of a substrate of semiconductor material comprising the steps of: a) applying on said at least one surface a metal layer of a material chosen in the group constituted by noble metals, coining metals, their oxides and their alloys; and b) applying on said metal layer a layer of a thiol of formula R—SH, where R is a linear alkyl chain having from 3 to 20 carbon atoms and, optionally, at least one hetero-atom, for obtaining an antiwetting coating. The disclosure further regards a method for the production of a nozzle plate for ink-jet printing and to an integrated ink-jet printhead provided with a nozzle plate obtained according to the method of the disclosure.

    Method for the surface treatment of a semiconductor substrate
    10.
    发明授权
    Method for the surface treatment of a semiconductor substrate 有权
    半导体衬底的表面处理方法

    公开(公告)号:US09321269B1

    公开(公告)日:2016-04-26

    申请号:US14836131

    申请日:2015-08-26

    Abstract: A method for application of an anti-wetting coating to a substrate of a semiconductor material is described. The method includes applying to a support a solution of a hydrocarbon comprising at least one unsaturated bond and, optionally, at least one hetero-atom for obtaining a layer of hydrocarbons. The method also includes treating at least one surface of the substrate of the semiconductor material with an acid. The layer of hydrocarbons is transferred from the support to the surface of the substrate of the semiconductor material. The layer of hydrocarbons is chemically coupled with the surface of the substrate of the semiconductor material. The method may be applied to an integrated ink jet printhead provided with a nozzle plate in which the nozzle plate serves as the substrate of the semiconductor material.

    Abstract translation: 对半导体材料的基板涂敷防湿涂层的方法进行说明。 该方法包括向载体施加包含至少一个不饱和键的烃的溶液和任选的至少一个杂原子以获得一层烃。 该方法还包括用酸处理半导体材料的衬底的至少一个表面。 烃层从载体转移到半导体材料的衬底表面。 烃层与半导体材料的衬底的表面化学偶联。 该方法可以应用于设置有喷嘴板的集成喷墨打印头,其中喷嘴板用作半导体材料的基板。

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