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    Image sensor using a global shutter and method for controlling same
    1.
    发明授权
    Image sensor using a global shutter and method for controlling same 有权

    公开(公告)号：US11451730B2

    公开(公告)日：2022-09-20

    申请号：US16890877

    申请日：2020-06-02

    Applicant: STMICROELECTRONICS (GRENOBLE 2) SAS ,  STMICROELECTRONICS (CROLLES 2) SAS

    Inventor： Pierre Malinge ,  Frederic Lalanne ,  Laurent Simony

    IPC: H04N5/3745 ,  H04N5/355

    Abstract: An image sensor includes pixels each including: a first transistor and a first switch that are connected in series between a first node configured to receive a first potential and an internal node of the pixel, a gate of the first transistor being coupled with a floating diffusion node of the pixel; a capacitive element, a first terminal of which is connected to the floating diffusion node of the pixel; and several assemblies each including a capacitance connected in series with a second switch coupling the capacitance to the internal node. The sensor also includes a control circuit configured to control, each time a voltage is stored in one of the assemblies of a pixel, an increase of a determined value of a difference in potential between the floating diffusion node and the internal node of the pixel.

    Back-side illuminated image sensor
    4.
    发明授权
    Back-side illuminated image sensor 有权

    公开(公告)号：US11610933B2

    公开(公告)日：2023-03-21

    申请号：US17327364

    申请日：2021-05-21

    Applicant: STMicroelectronics (Crolles 2) SAS

    Inventor： Frederic Lalanne ,  Laurent Gay ,  Pascal Fonteneau ,  Yann Henrion ,  Francois Guyader

    IPC: H01L27/146 ,  H01L21/768 ,  H01L21/02 ,  H01L21/306

    Abstract: Image sensors and methods of manufacturing image sensors are provided herein. In an embodiment, a method of manufacturing an image sensor includes forming a structure having a front side and a back side. The structure includes a semiconductor layer extending between the front side and the back side of the structure, and a capacitive insulation wall extending through the semiconductor layer between the front side and the back side of the structure. The capacitive insulation wall includes first and second insulating walls separated by a region of a conductive or semiconductor material. The method further includes selectively etching, from the back side of the structure, portions of the semiconductor layer and the region of conductive or semiconductor material, while retaining adjacent portions of the first and second insulating walls.

    Back-side illuminated image sensor
    7.
    发明授权
    Back-side illuminated image sensor 有权

    公开(公告)号：US11031433B2

    公开(公告)日：2021-06-08

    申请号：US16270989

    申请日：2019-02-08

    Applicant: STMicroelectronics (Crolles 2) SAS

    Inventor： Frederic Lalanne ,  Laurent Gay ,  Pascal Fonteneau ,  Yann Henrion ,  Francois Guyader

    IPC: H01L27/146 ,  H01L21/02 ,  H01L21/306

    Abstract: Image sensors and methods of manufacturing image sensors are provided herein. In an embodiment, a method of manufacturing an image sensor includes forming a structure having a front side and a back side. The structure includes a semiconductor layer extending between the front side and the back side of the structure, and a capacitive insulation wall extending through the semiconductor layer between the front side and the back side of the structure. The capacitive insulation wall includes first and second insulating walls separated by a region of a conductive or semiconductor material. The method further includes selectively etching, from the back side of the structure, portions of the semiconductor layer and the region of conductive or semiconductor material, while retaining adjacent portions of the first and second insulating walls.

    Image sensor with high dynamic range
    8.
    发明授权
    Image sensor with high dynamic range 有权

    公开(公告)号：US10397503B2

    公开(公告)日：2019-08-27

    申请号：US15376792

    申请日：2016-12-13

    Applicant: STMicroelectronics (Crolles 2) SAS

    Inventor： Pierre Emmanuel Marie Malinge ,  Frederic Lalanne

    IPC: H04N5/359 ,  H04N5/355 ,  H04N5/3745

    Abstract: A photodiode produces photogenerated charges in response to exposure to light. An integration period collects the photogenerated charges. Collected photogenerated charges in excess of an overflow threshold are passed to an overflow sense node. Remaining collected photogenerated charges are passed to a sense node. A first signal representing the overflow photogenerated charges is read from the overflow sense node. A second signal representing the remaining photogenerated charges is read from the sense node.

    Back-side illuminated image sensor
    10.
    发明授权
    Back-side illuminated image sensor 有权

    公开(公告)号：US12199131B2

    公开(公告)日：2025-01-14

    申请号：US17855521

    申请日：2022-06-30

    Applicant: STMicroelectronics (Crolles 2) SAS

    Inventor： Laurent Gay ,  Frederic Lalanne ,  Yann Henrion ,  Francois Guyader ,  Pascal Fonteneau ,  Aurelien Seignard

    IPC: H01L27/146

    Abstract: Image sensors and methods of manufacturing image sensors are provided. One such method includes forming a structure that includes a semiconductor layer extending from a front side to a back side, and a capacitive insulation wall extending through the semiconductor layer. The capacitive insulation wall includes first and second insulating walls separated by a region of a conductor or a semiconductor material. Portions of the semiconductor layer and the region of the conductor or semiconductor material are selectively etched, and the first and second insulating walls have portions protruding outwardly beyond a back side of the semiconductor layer and of the region of the conductor or semiconductor material. A dielectric passivation layer is deposited on the back side of the structure, and portions of the dielectric passivation layer are locally removed on a back side of the protruding portions of the first and second insulating walls.

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