公开(公告)号：US08975730B2

公开(公告)日：2015-03-10

申请号：US13622573

申请日：2012-09-19

Applicant: STMicroelectronics (Crolles 2) SAS ,  STMicroelectronics SA

Inventor： Didier Dutartre ,  Michel Marty ,  Sebastien Jouan

IPC: H01L29/06 ,  H01L21/768 ,  H01L21/762

CPC classification number: H01L21/76898 ,  H01L21/76251

Abstract: A device and corresponding fabrication method includes a vertical stack having an intermediate layer between a lower region and an upper region. The intermediate layer is extended by a protection layer. The vertical stack has a free lateral face on which the lower region, the upper region and the protection layer are exposed.

Abstract translation: 一种器件和相应的制造方法包括在下部区域和上部区域之间具有中间层的垂直堆叠。 中间层由保护层延伸。 垂直堆叠具有自由侧面，下部区域，上部区域和保护层暴露在该侧面上。

公开(公告)号：US09450000B2

公开(公告)日：2016-09-20

申请号：US14462724

申请日：2014-08-19

Applicant: STMicroelectronics (Crolles 2) SAS ,  STMicroelectronics SA ,  Commissariat A L'Energie Atomique et aux Energies Alternatives

Inventor： Michel Marty ,  Sebastien Jouan ,  Laurent Frey ,  Salim Boutami

IPC: H01L31/062 ,  H01L27/144 ,  H01L31/0232 ,  H01L27/146 ,  H01L31/107 ,  H01L29/16 ,  H01L29/49 ,  H01L29/66 ,  H01L31/101 ,  H01L31/18

CPC classification number: H01L27/1443 ,  H01L27/14625 ,  H01L27/14643 ,  H01L27/14689 ,  H01L29/16 ,  H01L29/4916 ,  H01L29/6656 ,  H01L31/02327 ,  H01L31/1016 ,  H01L31/107 ,  H01L31/1804

Abstract: A photodiode includes at least one central pad arranged on a light-receiving surface of a photodiode semiconductor substrate. The pad is made of a first material and includes lateral sidewalls surrounded by a spacer made of a second material having a different optical index than the first material. The lateral dimensions of the pad are smaller than an operating wavelength of the photodiode. Both the first and second materials are transparent to that operating wavelength. The pads and spacers are formed at a same time gate electrodes and sidewall spacers of MOS transistors are formed.

Abstract translation: 光电二极管包括布置在光电二极管半导体衬底的光接收表面上的至少一个中心衬垫。 衬垫由第一材料制成，并且包括由具有与第一材料不同的光学折射率的第二材料制成的间隔件包围的侧壁。 焊盘的横向尺寸小于光电二极管的工作波长。 第一和第二材料都对该工作波长是透明的。 焊盘和间隔物同时形成栅电极和MOS晶体管的侧壁间隔物。

公开(公告)号：US20150054042A1

公开(公告)日：2015-02-26

申请号：US14462724

申请日：2014-08-19

Applicant: STMicroelectronics (Crolles 2) SAS ,  STMicroelectronics SA ,  Commissariat A L'Energie Atomique et aux Energies Alternatives

Inventor： Michel Marty ,  Sebastien Jouan ,  Laurent Frey ,  Salim Boutami

IPC: H01L27/144 ,  H01L31/101 ,  H01L29/49 ,  H01L29/66 ,  H01L29/16 ,  H01L31/18 ,  H01L31/107

CPC classification number: H01L27/1443 ,  H01L27/14625 ,  H01L27/14643 ,  H01L27/14689 ,  H01L29/16 ,  H01L29/4916 ,  H01L29/6656 ,  H01L31/02327 ,  H01L31/1016 ,  H01L31/107 ,  H01L31/1804

Abstract: A photodiode includes at least one central pad arranged on a light-receiving surface of a photodiode semiconductor substrate. The pad is made of a first material and includes lateral sidewalls surrounded by a spacer made of a second material having a different optical index than the first material. The lateral dimensions of the pad are smaller than an operating wavelength of the photodiode. Both the first and second materials are transparent to that operating wavelength. The pads and spacers are formed at a same time gate electrodes and sidewall spacers of MOS transistors are formed.

Abstract translation: 光电二极管包括布置在光电二极管半导体衬底的光接收表面上的至少一个中心衬垫。 衬垫由第一材料制成，并且包括由具有与第一材料不同的光学折射率的第二材料制成的间隔件包围的侧壁。 焊盘的横向尺寸小于光电二极管的工作波长。 第一和第二材料都对该工作波长是透明的。 焊盘和间隔物同时形成栅电极和MOS晶体管的侧壁间隔物。

公开(公告)号：US09299865B2

公开(公告)日：2016-03-29

申请号：US14464898

申请日：2014-08-21

Applicant: STMicroelectronics (Crolles 2) SAS ,  STMicroelectronics SA ,  Commissariat A L'Energie Atomique et aux Energies Alternatives

Inventor： Michel Marty ,  Laurent Frey ,  Sebastien Jouan ,  Salim Boutami

IPC: H01L29/06 ,  H01L31/062 ,  H01L27/14 ,  H01L31/107 ,  H01L31/0352 ,  G01T1/24 ,  H01L31/0232 ,  H01L27/146

CPC classification number: H01L31/035236 ,  G01T1/248 ,  H01L27/14625 ,  H01L27/14643 ,  H01L27/14689 ,  H01L31/02327 ,  H01L31/107

Abstract: A SPAD-type photodiode has a semiconductor substrate with a light-receiving surface. A lattice formed of interlaced strips made of a first material covers the light receiving surface. The lattice includes lattice openings with lateral walls covered by a spacer made of a second material. Then first and second materials have different optical indices, and further each optical index is less than or equal to the substrate optical index. A pitch of the lattice is of the order of a magnitude of an operating wavelength of the photodiode. The first and second materials are transparent at that operating wavelength. The lattice is made of a conductive material electrically coupled to an electrical connection node (for example, a bias voltage node).

Abstract translation: SPAD型光电二极管具有具有受光面的半导体基板。 由第一材料制成的交错条形成的格子覆盖光接收表面。 格子包括具有被由第二材料制成的间隔物覆盖的侧壁的格子开口。 然后第一和第二材料具有不同的光学指数，并且每个光学指数还小于或等于基底光学指数。 晶格的间距是光电二极管的工作波长大小的数量级。 第一和第二材料在该工作波长下是透明的。 晶格由电耦合到电连接节点（例如，偏压节点）的导电材料制成。

公开(公告)号：US09219095B2

公开(公告)日：2015-12-22

申请号：US14489698

申请日：2014-09-18

Applicant: STMicroelectronics SA ,  STMicroelectronics (Crolles 2) SAS ,  Commissariat A L'Energie Atomique et aux Energies Alternatives

Inventor： Michel Marty ,  Sebastien Jouan ,  Laurent Frey

IPC: H01L27/146 ,  H01L29/49 ,  H01L31/107

CPC classification number: H01L27/14645 ,  H01L27/14614 ,  H01L27/14621 ,  H01L27/14636 ,  H01L27/14649 ,  H01L27/14685 ,  H01L27/14689 ,  H01L29/4916 ,  H01L31/107

Abstract: An integrated circuit includes a substrate and an interconnect part above the substrate, and further includes a photosensitive region in the substrate. A filter is provided aligned with the photosensitive region. The filter is formed by at least one layer of filter material. In one implementation for front side illumination, the layer of filter material is positioned above the photosensitive region between the interconnect part and the substrate. In another implementation for back side illumination, the layer of filter material is positioned below the photosensitive region opposite the interconnect part. The layer of filter material is configured such that a product of the thickness of the layer of filter material and the imaginary part of the refractive index of the layer of filter material is above 1 nm.

Abstract translation: 集成电路包括衬底和衬底上方的互连部分，并且还包括衬底中的感光区域。 提供与感光区域对准的过滤器。 过滤器由至少一层过滤材料形成。 在用于前侧照明的一个实施例中，过滤材料层位于互连部分和基板之间的感光区域上方。 在背面照明的另一实施方案中，过滤材料层位于与互连部分相对的光敏区域的下方。 过滤材料层被配置为使得过滤材料层的厚度和过滤材料层的折射率的虚部的乘积高于1nm。

公开(公告)号：US20150076573A1

公开(公告)日：2015-03-19

申请号：US14489698

申请日：2014-09-18

Applicant: STMicroelectronics SA ,  STMicroelectronics (Crolles 2) SAS ,  Commissariat A L'Energie Atomique et aux Energies Alternatives

Inventor： Michel Marty ,  Sebastien Jouan ,  Laurent Frey

IPC: H01L27/146 ,  H01L31/107 ,  H01L29/49

CPC classification number: H01L27/14645 ,  H01L27/14614 ,  H01L27/14621 ,  H01L27/14636 ,  H01L27/14649 ,  H01L27/14685 ,  H01L27/14689 ,  H01L29/4916 ,  H01L31/107

Abstract: An integrated circuit includes a substrate and an interconnect part above the substrate, and further includes a photosensitive region in the substrate. A filter is provided aligned with the photosensitive region. The filter is formed by at least one layer of filter material. In one implementation for front side illumination, the layer of filter material is positioned above the photosensitive region between the interconnect part and the substrate. In another implementation for back side illumination, the layer of filter material is positioned below the photosensitive region opposite the interconnect part. The layer of filter material is configured such that a product of the thickness of the layer of filter material and the imaginary part of the refractive index of the layer of filter material is above 1 nm.

Abstract translation: 集成电路包括衬底和衬底上方的互连部分，并且还包括衬底中的感光区域。 提供与感光区域对准的过滤器。 过滤器由至少一层过滤材料形成。 在用于前侧照明的一个实施例中，过滤材料层位于互连部分和基板之间的感光区域上方。 在背面照明的另一实施方案中，过滤材料层位于与互连部分相对的光敏区域的下方。 过滤材料层被配置为使得过滤材料层的厚度与过滤材料层的折射率的虚部的乘积高于1nm。

公开(公告)号：US20150053924A1

公开(公告)日：2015-02-26

申请号：US14464898

申请日：2014-08-21

Applicant: STMicroelectronics (Crolles 2) SAS ,  STMicroelectronics SA ,  Commissariat A L'Energie Atomique et aux Energies Alternatives

Inventor： Michel Marty ,  Laurent Frey ,  Sebastien Jouan ,  Salim Boutami

IPC: H01L31/0352 ,  H01L27/146

CPC classification number: H01L31/035236 ,  G01T1/248 ,  H01L27/14625 ,  H01L27/14643 ,  H01L27/14689 ,  H01L31/02327 ,  H01L31/107

Abstract: A SPAD-type photodiode has a semiconductor substrate with a light-receiving surface. A lattice formed of interlaced strips made of a first material covers the light receiving surface. The lattice includes lattice openings with lateral walls covered by a spacer made of a second material. Then first and second materials have different optical indices, and further each optical index is less than or equal to the substrate optical index. A pitch of the lattice is of the order of a magnitude of an operating wavelength of the photodiode. The first and second materials are transparent at that operating wavelength. The lattice is made of a conductive material electrically coupled to an electrical connection node (for example, a bias voltage node).

Abstract translation: SPAD型光电二极管具有具有受光面的半导体基板。 由第一材料制成的交错条形成的格子覆盖光接收表面。 格子包括具有被由第二材料制成的间隔物覆盖的侧壁的格子开口。 然后第一和第二材料具有不同的光学指数，并且每个光学指数还小于或等于基底光学指数。 晶格的间距是光电二极管的工作波长大小的数量级。 第一和第二材料在该工作波长下是透明的。 晶格由电耦合到电连接节点（例如，偏压节点）的导电材料制成。

公开(公告)号：US20130075870A1

公开(公告)日：2013-03-28

申请号：US13622573

申请日：2012-09-19

Applicant: STMicoelectronics (Crolles 2) SAS ,  STMicroelectronics SA,

Inventor： Didier Dutartre ,  Michel Marty ,  Sebastien Jouan

IPC: H01L21/3105 ,  H01L23/58

CPC classification number: H01L21/76898 ,  H01L21/76251

Abstract: A device and corresponding fabrication method includes a vertical stack having an intermediate layer between a lower region and an upper region. The intermediate layer is extended by a protection layer. The vertical stack has a free lateral face on which the lower region, the upper region and the protection layer are exposed.

Abstract translation: 一种器件和相应的制造方法包括在下部区域和上部区域之间具有中间层的垂直堆叠。 中间层由保护层延伸。 垂直堆叠具有自由侧面，下部区域，上部区域和保护层暴露在该侧面上。