公开(公告)号：US10311944B2

公开(公告)日：2019-06-04

申请号：US16025647

申请日：2018-07-02

Applicant: STMicroelectronics International N.V.

Inventor： Dhori Kedar Janardan ,  Abhishek Pathak ,  Shishir Kumar

IPC: G11C5/06 ,  G11C11/417

Abstract: A first transistor has a first conduction terminal coupled to a second bit line, a second conduction terminal coupled to a bit line node, and a control terminal biased by a second control signal. A second transistor has a first conduction terminal coupled to a second complementary bit line, a second conduction terminal coupled to a complementary bit line node, and a control terminal biased by the second control signal. A first replica transistor has a first conduction terminal coupled to the second bit line, a second conduction terminal coupled to the complementary bit line node, and a control terminal biased such that the first replica transistor is off. A second replica transistor has a first conduction terminal coupled to the second complementary bit line, a second conduction terminal coupled to the bit line node, and a control terminal biased such that the second replica transistor is off.

公开(公告)号：US20170316820A1

公开(公告)日：2017-11-02

申请号：US15447853

申请日：2017-03-02

Applicant: STMicroelectronics International N.V.

Inventor： Ashish Kumar ,  Vinay Kumar ,  Dhori Kedar Janardan

IPC: G11C11/419 ,  G11C11/418

CPC classification number: G11C11/419 ,  G11C5/063 ,  G11C5/145 ,  G11C5/147 ,  G11C11/418

Abstract: Read stability of a memory is enhanced in low voltage operation mode by selectively boosting a cell supply voltage for a row of memory cells. The boosted voltage results from a capacitive coupling to the word line in that row. The capacitive coupling is implemented by running the metal line of the power supply line for the cell supply voltage and the metal line for the word line adjacent to each other in a common metallization level. The selective voltage boost is controlled in response to operation of a modified memory cell exhibiting a deteriorated write margin. An output of the modified memory cell is compared to a threshold to generate a signal for controlling the selective voltage boost. Word line under-voltage circuitry is further provided to control application of an under-voltage to the word line.

公开(公告)号：US12250804B2

公开(公告)日：2025-03-11

申请号：US18454471

申请日：2023-08-23

Applicant: STMicroelectronics International N.V.

Inventor： Shafquat Jahan Ahmed ,  Dhori Kedar Janardan

IPC: H10B10/00

Abstract: A memory cell including a set of active regions that overlay a set of gate regions to form a pair of cross-coupled inverters. A first active region extends along a first axis. A first gate region extends transversely to the first active region and overlays the first active region to form a first transistor of the pair of cross-coupled inverters. A second gate region extends transversely to the first active region and overlays the first active region to form a second transistor of the pair of cross-coupled inverters. A second active region extends along a second axis and overlays the first gate region to form a third transistor of the pair of cross-coupled inverters. A fourth active region extending along a third axis and overlays a gate region to form a transistor of a read port.

公开(公告)号：US20190035454A1

公开(公告)日：2019-01-31

申请号：US16025647

申请日：2018-07-02

Applicant: STMicroelectronics International N.V.

Inventor： Dhori Kedar Janardan ,  Abhishek Pathak ,  Shishir Kumar

IPC: G11C11/417

Abstract: A first transistor has a first conduction terminal coupled to a second bit line, a second conduction terminal coupled to a bit line node, and a control terminal biased by a second control signal. A second transistor has a first conduction terminal coupled to a second complementary bit line, a second conduction terminal coupled to a complementary bit line node, and a control terminal biased by the second control signal. A first replica transistor has a first conduction terminal coupled to the second bit line, a second conduction terminal coupled to the complementary bit line node, and a control terminal biased such that the first replica transistor is off. A second replica transistor has a first conduction terminal coupled to the second complementary bit line, a second conduction terminal coupled to the bit line node, and a control terminal biased such that the second replica transistor is off.

公开(公告)号：US10037794B1

公开(公告)日：2018-07-31

申请号：US15660371

申请日：2017-07-26

Applicant: STMicroelectronics International N.V.

Inventor： Dhori Kedar Janardan ,  Abhishek Pathak ,  Shishir Kumar

IPC: G11C5/06 ,  G11C11/417

CPC classification number: G11C11/417 ,  G11C5/14 ,  G11C7/227 ,  G11C11/419 ,  G11C2207/002

Abstract: A first transistor has a first conduction terminal coupled to a second bit line, a second conduction terminal coupled to a bit line node, and a control terminal biased by a second control signal. A second transistor has a first conduction terminal coupled to a second complementary bit line, a second conduction terminal coupled to a complementary bit line node, and a control terminal biased by the second control signal. A first replica transistor has a first conduction terminal coupled to the second bit line, a second conduction terminal coupled to the complementary bit line node, and a control terminal biased such that the first replica transistor is off. A second replica transistor has a first conduction terminal coupled to the second complementary bit line, a second conduction terminal coupled to the bit line node, and a control terminal biased such that the second replica transistor is off.