公开(公告)号：US20030119219A1

公开(公告)日：2003-06-26

申请号：US10308482

申请日：2002-12-03

Applicant: STMICROELECTRONICS S.A.

Inventor： Alexis Farcy ,  Philippe Coronel ,  Pascal Ancey ,  Joaquin Torres

IPC: H01L021/00 ,  H01L021/44 ,  H01L021/48 ,  H01L021/50

CPC classification number: B81C1/0023 ,  B29C2043/5825

Abstract: The fabrication of an integrated circuit includes a first phase of producing an electronic chip and a second phase of producing at least one auxiliary component placed above the chip and of producing a protective cover which covers the auxiliary component. The first phase of producing the chip is effected from a first semiconductor substrate and comprises the formation of a cavity lying in a chosen region of the chip and emerging at the upper surface of the chip. The second production phase includes the production of the auxiliary component from a second semiconductor substrate, separate from the first, and then the placement in the cavity of the auxiliary component supported by the second substrate and the mutual adhesion of the second substrate to the upper surface of the chip lying outside the cavity. The second substrate then also forms the protective cover.

Abstract translation: 集成电路的制造包括制造电子芯片的第一阶段和产生放置在芯片上方的至少一个辅助部件并产生覆盖辅助部件的保护盖的第二阶段。 制造芯片的第一阶段从第一半导体衬底实现，并且包括形成位于芯片的选定区域中并且出现在芯片的上表面处的空腔。 第二生产阶段包括从第二半导体衬底生产辅助部件，与第一半导体衬底分离，然后放置在由第二衬底支撑的辅助部件的空腔中，以及将第二衬底与上表面的相互粘合 的芯片位于腔外。 第二基板然后也形成保护盖。

公开(公告)号：US20030098493A1

公开(公告)日：2003-05-29

申请号：US10272444

申请日：2002-10-16

Applicant: STMicroelectronics S.A.

Inventor： Michel Marty ,  Francois Leverd ,  Philippe Coronel ,  Joaquin Torres

IPC: H01L021/8238 ,  H01L029/00

CPC classification number: H01L21/76229 ,  H01L21/764

Abstract: An isolation trench formed in a semiconductor substrate has side walls and a bottom wall. Spacers are on the side walls and face each other for forming a narrow channel therebetween. The bottom wall and the spacers are coated with an electrically insulating material for delimiting a closed empty cavity in the channel. The isolation trench is applicable to the manufacture of integrated circuits.

Abstract translation: 在半导体衬底中形成的隔离沟具有侧壁和底壁。 隔板在侧壁上并且彼此面对以在它们之间形成狭窄的通道。 底壁和间隔物涂覆有用于限定通道中的封闭空腔的电绝缘材料。 隔离沟槽适用于集成电路的制造。