公开(公告)号：US20030146468A1

公开(公告)日：2003-08-07

申请号：US10379169

申请日：2003-03-04

Applicant: STMicroelectronics S.A

Inventor： Yvon Gris ,  Thierry Schwartzmann

IPC: H01L029/788

CPC classification number: H01L27/0826 ,  H01L21/761 ,  H01L21/76232 ,  H01L21/82285 ,  H01L21/8249 ,  H01L27/0623

Abstract: A method of manufacturing a bipolar transistor in a P-type substrate, including the steps of forming in the substrate a first N-type area; forming by epitaxy a first silicon layer; forming in this first layer, and substantially above the first area a second heavily-doped P-type area separate from the second area; forming at the periphery of this second area a third N-type area; forming by epitaxy a second silicon layer; forming a deep trench crossing the first and second silicon layers, penetrating into the substrate and laterally separating the second area from the third area; and performing an anneal such that the dopant of the third area is in continuity with that of the first area.

Abstract translation: 一种在P型衬底中制造双极晶体管的方法，包括以下步骤：在衬底中形成第一N型区域; 通过外延形成第一硅层; 在该第一层中形成，并且在第一区域上基本上在第二区域分离第二重掺杂P型区域; 在该第二区域的周围形成第三N型区域; 通过外延形成第二硅层; 形成穿过所述第一和第二硅层的深沟槽，穿过所述衬底并将所述第二区域与所述第三区域横向分开; 以及执行退火，使得第三区域的掺杂剂与第一区域的掺杂剂连续。

公开(公告)号：US20020119620A1

公开(公告)日：2002-08-29

申请号：US10044812

申请日：2002-01-11

Applicant: STMicroelectronics S.A.

Inventor： Olivier Menut ,  Yvon Gris

IPC: H01L021/8242

CPC classification number: H01L27/10867 ,  H01L21/02667 ,  H01L21/2022 ,  H01L27/10832

Abstract: The integrated circuit comprises a semiconductor substrate SB supporting a memory cell PM of the DRAM type comprising an access transistor T and a storage capacitor TRC. The access transistor is made on the substrate, and the substrate includes a capacitive trench TRC buried beneath the transistor and forming the storage capacitor, the capacitive trench being in contact with one of the source and drain regions of the transistor.

Abstract translation: 集成电路包括支持DRAM型存储单元PM的半导体衬底SB，包括存取晶体管T和存储电容器TRC。 存取晶体管制成在衬底上，并且衬底包括埋在晶体管下面并形成存储电容器的电容沟槽TRC，电容沟槽与晶体管的源极和漏极区域之一接触。

公开(公告)号：US20020113233A1

公开(公告)日：2002-08-22

申请号：US10044286

申请日：2002-01-11

Applicant: STMICROELECTRONICS S.A.

Inventor： Olivier Menut ,  Yvon Gris

IPC: H01L031/20 ,  H01L031/036 ,  H01L029/88 ,  H01L029/04

CPC classification number: H01L27/14603 ,  H01L27/1443 ,  H01L27/14643 ,  H01L31/03529 ,  Y02E10/50

Abstract: An integrated circuit is provided that includes a substrate incorporating a semiconductor photodiode device having a p-n junction. The photodiode device includes at least one capacitive trench buried in the substrate and connected in parallel with the junction. In a preferred embodiment, the substrate is formed from silicon, and the capacitive trench includes an internal doped silicon region partially enveloped by an insulating wall that laterally separates the internal region from the substrate. Also provided is a method for fabricating an integrated circuit including a substrate that incorporates a semiconductor photodiode device having a p-n junction.

Abstract translation: 提供一种集成电路，其包括结合有具有p-n结的半导体光电二极管器件的衬底。 该光电二极管装置包括至少一个电容沟槽，该电容沟槽埋设在该衬底中，并与该结点并联连接。 在优选实施例中，衬底由硅形成，并且电容沟槽包括由绝缘壁部分包围的内部掺杂硅区域，该绝缘壁横向分离内部区域与衬底。 还提供了一种制造集成电路的方法，该集成电路包括具有p-n结的半导体光电二极管器件的衬底。

公开(公告)号：US20040108571A1

公开(公告)日：2004-06-10

申请号：US10716249

申请日：2003-11-18

Applicant: STMicroelectronics S.A.

Inventor： Olivier Menut ,  Yvon Gris

IPC: H01L029/00

CPC classification number: H01L27/14603 ,  H01L27/1443 ,  H01L27/14643 ,  H01L31/03529 ,  Y02E10/50

Abstract: An integrated circuit is provided that includes a substrate incorporating a semiconductor photodiode device having a p-n junction. The photodiode device includes at least one capacitive trench buried in the substrate and connected in parallel with the junction. In a preferred embodiment, the substrate is formed from silicon, and the capacitive trench includes an internal doped silicon region partially enveloped by an insulating wall that laterally separates the internal region from the substrate. Also provided is a method for fabricating an integrated circuit including a substrate that incorporates a semiconductor photodiode device having a p-n junction.

Abstract translation: 提供一种集成电路，其包括结合有具有p-n结的半导体光电二极管器件的衬底。 该光电二极管装置包括至少一个电容沟槽，该电容沟槽埋设在该衬底中，并与该结点并联连接。 在优选实施例中，衬底由硅形成，并且电容沟槽包括由绝缘壁部分包围的内部掺杂硅区域，该绝缘壁横向分离内部区域与衬底。 还提供了一种制造集成电路的方法，该集成电路包括具有p-n结的半导体光电二极管器件的衬底。

公开(公告)号：US20030102577A1

公开(公告)日：2003-06-05

申请号：US10315870

申请日：2002-12-09

Applicant: STMicroelectronics S.A.

Inventor： Yvon Gris

IPC: H01L027/088

CPC classification number: H01L29/66242 ,  H01L29/66272

Abstract: A method for defining, on the upper surface of a substrate, two self-aligned areas, including the steps of depositing a protective layer; depositing a covering layer; opening the protective and covering layers at a location substantially corresponding to the desired border of the two areas; forming a spacer along the side of the opening, this spacer having a rear portion against said border and an opposite front portion; opening the protective and covering layers behind the rear portion of the spacer; and removing the protection layer to reach the rear portion of the spacer; whereby two self-aligned areas are defined on either side of the spacer length.

公开(公告)号：US20020094678A1

公开(公告)日：2002-07-18

申请号：US10044402

申请日：2002-01-11

Applicant: STMICROELECTRONICS S.A.

Inventor： Olivier Menut ,  Yvon Gris

IPC: C21D001/00

CPC classification number: H01L21/76235 ,  H01L21/02667 ,  H01L21/2022

Abstract: An initial single-crystal substrate 1 having, locally and on the surface, at least one discontinuity in the single-crystal lattice is formed. The initial substrate is recessed at the discontinuity. The single-crystal lattice is amorphized around the periphery ofthe recess. A layer ofamorphous material having the same chemical composition as that ofthe initial substrate is deposited on the structure obtained. The structure obtained is thermally annealed in order to recrystallize the amorphous material so as to be continuous with the single-crystal lattice ofthe initial substrate.

Abstract translation: 形成了在局部和表面上形成单晶格中的至少一个不连续性的初始单晶衬底1。 初始衬底在不连续处凹进。 单晶晶格围绕凹槽的周边非晶化。 在所获得的结构上沉积具有与初始底物相同的化学组成的无定形材料层。 对所获得的结构进行热退火，以使非晶材料重结晶，从而与初始衬底的单晶晶格连续。