公开(公告)号：US20030100154A1

公开(公告)日：2003-05-29

申请号：US10285363

申请日：2002-10-30

Applicant: STMicroelectronics S.r.I.

Inventor： Ferruccio Frisina ,  Antonio Pinto ,  Angelo Magri

IPC: H01L021/336

CPC classification number: H01L24/10 ,  H01L23/485 ,  H01L23/49562 ,  H01L24/13 ,  H01L24/37 ,  H01L24/40 ,  H01L24/48 ,  H01L24/73 ,  H01L29/41741 ,  H01L2224/13 ,  H01L2224/13099 ,  H01L2224/48247 ,  H01L2224/73221 ,  H01L2224/84801 ,  H01L2924/00014 ,  H01L2924/00015 ,  H01L2924/01004 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01022 ,  H01L2924/01027 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01074 ,  H01L2924/01079 ,  H01L2924/014 ,  H01L2924/14 ,  H01L2924/181 ,  H01L2924/351 ,  H01L2924/00 ,  H01L2224/45099 ,  H01L2224/05599 ,  H01L2224/85399 ,  H01L2924/00012 ,  H01L2224/45015 ,  H01L2924/207 ,  H01L2224/37099

Abstract: An electronic power device of improved structure is fabricated with MOS technology to have a gate finger region and corresponding source regions on either sides of the gate region. This device has a first-level metal layer arranged to independently contact the gate region and source regions, and has a protective passivation layer arranged to cover the gate region. Advantageously, a wettable metal layer, deposited onto the passivation layer and the first-level metal layer, overlies said source regions. In this way, the additional wettable metal layer is made to act as a second-level metal.

Abstract translation: 利用MOS技术制造具有改进结构的电子功率器件，以在栅极区域的两侧具有栅极指状区域和相应的源极区域。 该器件具有布置成独立地接触栅极区域和源极区域的第一级金属层，并且具有覆盖栅极区域的保护性钝化层。 有利地，沉积在钝化层和第一级金属层上的可湿性金属层覆盖在所述源极区域上。 以这种方式，使附加的可湿性金属层作为二级金属。