公开(公告)号：US20030100154A1

公开(公告)日：2003-05-29

申请号：US10285363

申请日：2002-10-30

Applicant: STMicroelectronics S.r.I.

Inventor： Ferruccio Frisina ,  Antonio Pinto ,  Angelo Magri

IPC: H01L021/336

CPC classification number: H01L24/10 ,  H01L23/485 ,  H01L23/49562 ,  H01L24/13 ,  H01L24/37 ,  H01L24/40 ,  H01L24/48 ,  H01L24/73 ,  H01L29/41741 ,  H01L2224/13 ,  H01L2224/13099 ,  H01L2224/48247 ,  H01L2224/73221 ,  H01L2224/84801 ,  H01L2924/00014 ,  H01L2924/00015 ,  H01L2924/01004 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01022 ,  H01L2924/01027 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01074 ,  H01L2924/01079 ,  H01L2924/014 ,  H01L2924/14 ,  H01L2924/181 ,  H01L2924/351 ,  H01L2924/00 ,  H01L2224/45099 ,  H01L2224/05599 ,  H01L2224/85399 ,  H01L2924/00012 ,  H01L2224/45015 ,  H01L2924/207 ,  H01L2224/37099

Abstract: An electronic power device of improved structure is fabricated with MOS technology to have a gate finger region and corresponding source regions on either sides of the gate region. This device has a first-level metal layer arranged to independently contact the gate region and source regions, and has a protective passivation layer arranged to cover the gate region. Advantageously, a wettable metal layer, deposited onto the passivation layer and the first-level metal layer, overlies said source regions. In this way, the additional wettable metal layer is made to act as a second-level metal.

Abstract translation: 利用MOS技术制造具有改进结构的电子功率器件，以在栅极区域的两侧具有栅极指状区域和相应的源极区域。 该器件具有布置成独立地接触栅极区域和源极区域的第一级金属层，并且具有覆盖栅极区域的保护性钝化层。 有利地，沉积在钝化层和第一级金属层上的可湿性金属层覆盖在所述源极区域上。 以这种方式，使附加的可湿性金属层作为二级金属。

公开(公告)号：US20020113247A1

公开(公告)日：2002-08-22

申请号：US10072817

申请日：2002-02-08

Applicant: STMicroelectronics S.r.I.

Inventor： Angelo Magri ,  Leonardo Fragapane

IPC: H01L029/76

CPC classification number: H01L24/06 ,  H01L23/49562 ,  H01L24/48 ,  H01L24/49 ,  H01L25/071 ,  H01L2224/02166 ,  H01L2224/04042 ,  H01L2224/05553 ,  H01L2224/05624 ,  H01L2224/05644 ,  H01L2224/0603 ,  H01L2224/32145 ,  H01L2224/32245 ,  H01L2224/48091 ,  H01L2224/48137 ,  H01L2224/48139 ,  H01L2224/48247 ,  H01L2224/48472 ,  H01L2224/4903 ,  H01L2224/49051 ,  H01L2224/73265 ,  H01L2924/00014 ,  H01L2924/01013 ,  H01L2924/01014 ,  H01L2924/01015 ,  H01L2924/01022 ,  H01L2924/01023 ,  H01L2924/01024 ,  H01L2924/01028 ,  H01L2924/01079 ,  H01L2924/01093 ,  H01L2924/1305 ,  H01L2924/13055 ,  H01L2924/13091 ,  H01L2924/00 ,  H01L2224/45099 ,  H01L2224/05599

Abstract: A method of manufacturing an electronic structure, which structure comprises a first power device and a second unidirectional device, both integrated in the same protective package. The first device having at least first and second electrodes of the first device, with said first electrode of the first device being attached to the package. The second device having first and second electrodes of the second device, wherein the first electrode of the second device is superposed on the second electrode of the first device and connected electrically to the second electrode of the first device.

Abstract translation: 一种制造电子结构的方法，该结构包括集成在同一保护封装中的第一电力装置和第二单向装置。 所述第一装置具有所述第一装置的至少第一和第二电极，所述第一装置的所述第一电极附接到所述包装。 第二装置具有第二装置的第一和第二电极，其中第二装置的第一电极重叠在第一装置的第二电极上并与第一装置的第二电极电连接。