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公开(公告)号：US20230283271A1
公开(公告)日：2023-09-07
申请号：US18157977
申请日：2023-01-23
发明人： Antonino Conte , Marco Ruta , Michelangelo Pisasale , Agatino Massimo Maccarrone , Francesco Tomaiuolo
CPC分类号： H03K5/24 , H03K3/0315
摘要： A system a ring oscillator configured to produce a set of clock signals having the same clock period and a mutual time delay between respective clock signal edges. Comparator circuits are coupled to first and second input nodes and produce a set of comparison signals according to a respective sequence of comparison phases. A set of synchronization circuits is coupled to the ring oscillator and to the plurality of comparator circuits. The synchronization circuits allot, to each one of the comparator circuits, respective time windows for communication over respective communication lines of the comparison signals. The respective time windows are synchronized based on the clock signals. A multiplexer couples the respective communication lines to an output line to sequentially enable each of the comparator circuits to sequentially output respective comparison signals over the output line for the respective time windows thereby forming a composite comparison signal evolving over time.
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公开(公告)号：US20240153553A1
公开(公告)日：2024-05-09
申请号：US18406097
申请日：2024-01-06
IPC分类号： G11C13/00
CPC分类号： G11C13/0028 , G11C13/0004 , G11C13/003 , G11C2213/79
摘要： In an embodiment, a non-volatile memory device is proposed. The device includes a plurality of local pull-up stages distributed along a group of memory portions in a memory array. Each local pull-up stage includes, for each wordline that extends through the group of memory portions, a corresponding local pull-up transistor of an NMOS type. The local pull-up transistors of each local pull-up are configured to locally decouple the corresponding wordline from a node at a first reference potential in response to a wordline that extends through the group of memory portions being selected, and locally couple the corresponding wordline to the node at the first reference potential in response to all the wordlines that extend through the group of memory portions being deselected to restore locally a deselection voltage on a wordline previously selected.
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公开(公告)号：US11803202B2
公开(公告)日：2023-10-31
申请号：US17933972
申请日：2022-09-21
发明人： Marco Ruta , Antonio Conte , Michelangelo Pisasale , Agatino Massimo Maccarrone , Francesco Tomaiuolo
摘要： A voltage regulator receives an input voltage and produces a regulated output voltage. A first feedback network compares a feedback signal to a reference signal to assert/de-assert a first pulsed control signal when the reference signal is higher/lower than the feedback signal. A second feedback network compares the output voltage to a threshold signal to assert/de-assert a second control signal when the threshold signal is higher/lower than the output voltage. A charge pump is enabled if the second control signal is de-asserted and is clocked by the first pulsed control signal to produce a supply voltage higher than the input voltage. A first pass element is enabled when the second control signal is asserted and is selectively activated when the first pulsed control signal is asserted. A second pass element is selectively activated when the second control signal is de-asserted.
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公开(公告)号：US11908514B2
公开(公告)日：2024-02-20
申请号：US17667080
申请日：2022-02-08
IPC分类号： G11C13/00
CPC分类号： G11C13/0028 , G11C13/003 , G11C13/0004 , G11C2213/79
摘要： In an embodiment, a non-volatile memory device includes a memory array including a plurality of memory portions, each memory portion having a respective plurality of memory cells arranged in rows and columns, wherein the memory portions are arranged in groups, each group of memory portions having a plurality of respective memory portions arranged in a row and a plurality of respective wordlines that extend through the respective memory portions, and wherein the memory cells of the memory portions of the group are coupled to the respective wordlines and a row decoder including a pre-decoding stage configured to execute a selection, in which it selects a wordline that extends through a group of memory portions and deselects other wordlines that extend through the group of memory portions, and a subsequent deselection, in which it deselects all the wordlines that extend through the group of memory portions, wherein the row decoder further includes, for each group of memory portions, a shared pull-up stage configured to decouple from or couple to a node at a first reference potential each wordline that extends through the group of memory portions, when the wordline is respectively selected or deselected, so as to impose on each wordline, when deselected, a deselection voltage, a plurality of pull-down stages distributed along the group of memory portions, each pull-down stage being configured to locally couple each wordline that extends through the group of memory portions, when selected, to a node at a second reference potential, so as to impose locally a selection voltage on the wordline, wherein each pull-down stage is further configured to locally decouple from the node at the second reference potential each wordline that extends through the group of memory portions, when deselected; and a number of local pull-up stages distributed along the group of memory portions, each local pull-up stage having, for each wordline that extends through the group of memory portions, a corresponding local pull-up transistor of an NMOS type.
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5.发明申请公开(公告)号：US20230021601A1
公开(公告)日：2023-01-26
申请号：US17814442
申请日：2022-07-22
发明人： Agatino Massimo Maccarrone , Antonino Conte , Francesco Tomaiuolo , Michelangelo Pisasale , Marco Ruta
IPC分类号： G11C13/00
摘要： In an embodiment a circuit includes a plurality of memory cells, wherein each memory cell includes a phase-change memory storage element coupled in series with a respective current-modulating transistor between a supply voltage node and a reference voltage node, the current-modulating transistors being configured to receive a drive signal at a control terminal and to inject respective programming currents into the respective phase-change memory storage element as a function of the drive signal, a driver circuit configured to produce the drive signal at a common control node, wherein the common control node is coupled to the control terminals of the current-modulating transistors, the drive signal modulating the programming currents to produce SET programming current pulses and RESET programming current pulses and at least one current generator circuit configured to inject a compensation current into the common control node in response to the current-modulating transistors injecting the programming currents into the respective phase-change memory storage elements.
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公开(公告)号：US20220284954A1
公开(公告)日：2022-09-08
申请号：US17667080
申请日：2022-02-08
IPC分类号： G11C13/00
摘要： In an embodiment, a non-volatile memory device includes a memory array including a plurality of memory portions, each memory portion having a respective plurality of memory cells arranged in rows and columns, wherein the memory portions are arranged in groups, each group of memory portions having a plurality of respective memory portions arranged in a row and a plurality of respective wordlines that extend through the respective memory portions, and wherein the memory cells of the memory portions of the group are coupled to the respective wordlines and a row decoder including a pre-decoding stage configured to execute a selection, in which it selects a wordline that extends through a group of memory portions and deselects other wordlines that extend through the group of memory portions, and a subsequent deselection, in which it deselects all the wordlines that extend through the group of memory portions, wherein the row decoder further includes, for each group of memory portions, a shared pull-up stage configured to decouple from or couple to a node at a first reference potential each wordline that extends through the group of memory portions, when the wordline is respectively selected or deselected, so as to impose on each wordline, when deselected, a deselection voltage, a plurality of pull-down stages distributed along the group of memory portions, each pull-down stage being configured to locally couple each wordline that extends through the group of memory portions, when selected, to a node at a second reference potential, so as to impose locally a selection voltage on the wordline, wherein each pull-down stage is further configured to locally decouple from the node at the second reference potential each wordline that extends through the group of memory portions, when deselected; and a number of local pull-up stages distributed along the group of memory portions, each local pull-up stage having, for each wordline that extends through the group of memory portions, a corresponding local pull-up transistor of an NMOS type.
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公开(公告)号：US12107591B2
公开(公告)日：2024-10-01
申请号：US18054333
申请日：2022-11-10
发明人： Agatino Massimo Maccarrone , Antonino Conte , Francesco Tomaiuolo , Michelangelo Pisasale , Marco Ruta
IPC分类号： H03M1/06
CPC分类号： H03M1/0604
摘要： In accordance with an embodiment, a digital-to-analog converter (DAC) includes: a W-2W current mirror that includes a first plurality of MOS transistors having a first width, and second plurality of MOS transistors having a second width that is twice the first width, where ones of the second plurality of MOS transistors are coupled between drains of adjacent ones of the first plurality of MOS transistors; and a bulk bias generator having a plurality of output nodes coupled to corresponding bulk nodes of the first plurality of MOS transistors, wherein the plurality of output nodes are configured to provide voltages that are inversely proportional to temperature.
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8.发明授权公开(公告)号：US11960718B2
公开(公告)日：2024-04-16
申请号：US17721933
申请日：2022-04-15
CPC分类号： G06F3/0604 , G06F3/0655 , G06F3/0679
摘要： In response to a request to store new data at a memory location of a bitwise programmable non-volatile memory, data stored at the memory location of the bitwise programmable memory is sensed. The bits of the sensed data are compared with bits of the new data. An indication of a cost difference is determined between a first burst of bitwise programming operations associated with programming bits of the new data which are different from bits of the sensed data, and a second burst of bitwise programming operations associated with programming bits of a complementary inversion of the new data which are different from bits of the sensed data. One of the first burst of bitwise programming operations or the second burst of bitwise programming operations is executed based on the generated indication of the cost difference.
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公开(公告)号：US11171644B2
公开(公告)日：2021-11-09
申请号：US17207382
申请日：2021-03-19
摘要： An embodiment power-on-reset circuit, having a power supply input to receive a power supply voltage, generates a reset signal with a value switching upon the power supply voltage crossing a POR detection level. The power-on-reset circuit has: a PTAT stage having a left branch and a right branch and generating a current equilibrium condition between the currents circulating in the left and right branches upon the power supply voltage reaching the POR detection level; and an output stage coupled to the PTAT stage and generating the reset signal, with the value switching at the occurrence of the current equilibrium condition for the PTAT stage. The power-on-reset circuit further comprises a detection-level generation stage, coupled to the PTAT stage as a central branch thereof to define the value of the POR detection level.
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