公开(公告)号：US20160377691A1

公开(公告)日：2016-12-29

申请号：US15135793

申请日：2016-04-22

Applicant: STMicroelectronics S.r.l.

Inventor： Dario Paci ,  Marco Marchesi ,  Marco Morelli

IPC: G01R33/09

CPC classification number: G01R33/096 ,  G01R33/0011 ,  G01R33/025 ,  G01R33/07 ,  G01R33/09

Abstract: An integrated AMR magnetoresistive sensor has a magnetoresistor, a set/reset coil and a shielding region arranged on top of each other. The set/reset coil is positioned between the magnetoresistor and the shielding region. The magnetoresistor is formed by a magnetoresistive strip of an elongated shape having a length in a first direction parallel to the preferential magnetization direction and a width in a second direction perpendicular to the first direction. The set/reset coil has at least one stretch extending transversely to the magnetoresistive strip. The shielding region is a ferromagnetic material and has a width in the second direction greater than the width of the magnetoresistive strip so as to attenuate the external magnetic field traversing the magnetoresistive strip and increase the sensitivity scale of the magnetoresistive sensor.

Abstract translation: 一个集成的AMR磁阻传感器具有一个磁电阻，一组/复位线圈和一个彼此顶部布置的屏蔽区域。 设置/复位线圈位于磁电阻器和屏蔽区域之间。 磁阻电阻由具有平行于优先磁化方向的第一方向的长度和垂直于第一方向的第二方向的宽度的细长形状的磁阻带形成。 固定/复位线圈具有横向于磁阻带延伸的至少一个拉伸。 屏蔽区域是铁磁材料，并且具有大于磁阻带宽度的第二方向的宽度，以便衰减穿过磁阻带的外部磁场并增加磁阻传感器的灵敏度。

公开(公告)号：US10094891B2

公开(公告)日：2018-10-09

申请号：US15135793

申请日：2016-04-22

Applicant: STMicroelectronics S.r.l.

Inventor： Dario Paci ,  Marco Marchesi ,  Marco Morelli

IPC: G01R33/09 ,  G01R33/00 ,  G01R33/07 ,  G01R33/025

Abstract: An integrated AMR magnetoresistive sensor has a magnetoresistor, a set/reset coil and a shielding region arranged on top of each other. The set/reset coil is positioned between the magnetoresistor and the shielding region. The magnetoresistor is formed by a magnetoresistive strip of an elongated shape having a length in a first direction parallel to the preferential magnetization direction and a width in a second direction perpendicular to the first direction. The set/reset coil has at least one stretch extending transversely to the magnetoresistive strip. The shielding region is a ferromagnetic material and has a width in the second direction greater than the width of the magnetoresistive strip so as to attenuate the external magnetic field traversing the magnetoresistive strip and increase the sensitivity scale of the magnetoresistive sensor.

公开(公告)号：US20150276894A1

公开(公告)日：2015-10-01

申请号：US14637698

申请日：2015-03-04

Applicant: STMicroelectronics S.r.l.

Inventor： Giulio Ricotti ,  Marco Morelli ,  Marco Marchesi

IPC: G01R33/07

CPC classification number: G01R33/07 ,  G01R33/0017 ,  G01R33/0029 ,  G01R33/075

Abstract: A magnetic field sensor formed by a Hall cell having a first, second, third and fourth conduction nodes electrically coupled together by resistive paths. Flowing between the first and second conduction nodes is a control current. In the presence of a magnetic field, a difference of potential due to the Hall effect is generated between the third and fourth conduction nodes. An operational amplifier has an inverting input terminal coupled to the fourth conduction node, a non-inverting input terminal biased at the voltage at the third conduction node, and an output terminal coupled in feedback mode to the inverting input by a feedback resistor. The current generated in feedback through the feedback resistor generates a voltage indicating unbalancing, due to the Hall effect, between the third and fourth conductive nodes, and consequently indicates the intensity of the magnetic field that acts upon the Hall cell.

Abstract translation: 由具有通过电阻路径电耦合在一起的第一，第二，第三和第四导电节点的霍尔单元形成的磁场传感器。 第一和第二导电节点之间的流动是控制电流。 在存在磁场的情况下，在第三和第四导电节点之间产生由于霍尔效应引起的电位差。 运算放大器具有耦合到第四导通节点的反相输入端子，偏置在第三导通节点处的电压的非反相输入端子，以及以反馈模式以反馈电阻器耦合到反相输入端的输出端子。 通过反馈电阻反馈产生的电流由于第三和第四导电节点之间的霍尔效应而产生指示不平衡的电压，并且因此表示作用于霍尔单元的磁场的强度。

公开(公告)号：US10236378B2

公开(公告)日：2019-03-19

申请号：US15457799

申请日：2017-03-13

Applicant: STMICROELECTRONICS S.R.L.

Inventor： Marco Sambi ,  Fabrizio Fausto Renzo Toia ,  Marco Marchesi ,  Marco Morelli ,  Riccardo Depetro ,  Giuseppe Barillaro ,  Lucanos Marsilio Strambini

IPC: H01L29/76 ,  H01L29/78 ,  H01L21/02 ,  H01L21/265 ,  H01L21/3063 ,  H01L21/308 ,  H01L21/762 ,  H01L29/06 ,  H01L29/08 ,  H01L29/36 ,  H01L29/417 ,  H01L29/66 ,  H03K17/687 ,  H01L29/32 ,  H01L29/861 ,  H01L29/16

Abstract: An integrated electronic device having a semiconductor body including: a first electrode region having a first type of conductivity; and a second electrode region having a second type of conductivity, which forms a junction with the first electrode region. The integrated electronic device further includes a nanostructured semiconductor region, which extends in one of the first and second electrode regions.

公开(公告)号：US09664753B2

公开(公告)日：2017-05-30

申请号：US14637698

申请日：2015-03-04

Applicant: STMicroelectronics S.r.l.

Inventor： Giulio Ricotti ,  Marco Morelli ,  Marco Marchesi

IPC: G01R33/06 ,  G01R33/07 ,  G01R33/00

CPC classification number: G01R33/07 ,  G01R33/0017 ,  G01R33/0029 ,  G01R33/075

Abstract: A magnetic field sensor formed by a Hall cell having a first, second, third and fourth conduction nodes electrically coupled together by resistive paths. Flowing between the first and second conduction nodes is a control current. In the presence of a magnetic field, a difference of potential due to the Hall effect is generated between the third and fourth conduction nodes. An operational amplifier has an inverting input terminal coupled to the fourth conduction node, a non-inverting input terminal biased at the voltage at the third conduction node, and an output terminal coupled in feedback mode to the inverting input by a feedback resistor. The current generated in feedback through the feedback resistor generates a voltage indicating unbalancing, due to the Hall effect, between the third and fourth conductive nodes, and consequently indicates the intensity of the magnetic field that acts upon the Hall cell.

公开(公告)号：US10930799B2

公开(公告)日：2021-02-23

申请号：US16246945

申请日：2019-01-14

Applicant: STMicroelectronics S.r.l.

Inventor： Flavio Francesco Villa ,  Marco Morelli ,  Marco Marchesi ,  Simone Dario Mariani ,  Fabrizio Fausto Renzo Toia

IPC: H01L29/94 ,  H01L29/66 ,  H01L27/06 ,  H01L49/02 ,  H01L21/02

Abstract: A semiconductor body includes a front side and a back side and is configured to support an electronic circuit. A buried region is provided in the semiconductor body at a location between the electronic circuit and the back side. The buried region includes a layer of conductive material and a dielectric layer, where the dielectric layer is arranged between the layer of conductive material and the semiconductor body. A conductive path extends between the buried region and the front side to form a path for electrical access to the layer of conductive material. A capacitor is thus formed with the layer of conductive material providing a capacitor plate and the dielectric layer providing the capacitor dielectric. A further capacitor plate is provided by the semiconductor body, or by a further layer of conductive material in the buried region.

公开(公告)号：US10571531B2

公开(公告)日：2020-02-25

申请号：US15918809

申请日：2018-03-12

Applicant: STMicroelectronics S.r.l.

Inventor： Marco Crescentini ,  Marco Tartagni ,  Aldo Romani ,  Roberto Canegallo ,  Marco Marchesi ,  Domenico Cristaudo

IPC: G01R33/06 ,  G01R33/07 ,  G01R33/038 ,  G01R33/028 ,  G01R33/02 ,  G01R33/00 ,  B64G1/36 ,  G01R15/20 ,  G01R33/12 ,  G01N27/90 ,  G11C19/08 ,  H01F7/02

Abstract: A Hall sensor may include a Hall sensing element configured to produce a Hall voltage indicative of a magnetic field when traversed by an electric current, and a first pair of bias electrodes mutually opposed in a first direction across the Hall sensing element. The Hall sensor may include a second pair of bias electrodes mutually opposed in a second direction across the Hall sensing element. The Hall sensor may include a first pair of sensing electrodes mutually opposed in a third direction across the Hall sensing element, and a second pair of sensing electrodes mutually opposed in a fourth direction across the Hall sensing element. The fourth direction may be orthogonal to the third direction, each sensing electrode being between a bias electrode of the first pair and a bias electrode of the second pair.

公开(公告)号：US10535767B2

公开(公告)日：2020-01-14

申请号：US16264384

申请日：2019-01-31

Applicant: STMICROELECTRONICS S.R.L.

Inventor： Marco Sambi ,  Fabrizio Fausto Renzo Toia ,  Marco Marchesi ,  Marco Morelli ,  Riccardo Depetro ,  Giuseppe Barillaro ,  Lucanos Marsilio Strambini

IPC: H01L21/02 ,  H01L29/78 ,  H01L29/32 ,  H01L29/66 ,  H01L29/861 ,  H01L29/06 ,  H01L29/16 ,  H01L21/265 ,  H01L21/3063 ,  H01L21/308 ,  H01L21/762 ,  H01L29/08 ,  H01L29/36 ,  H01L29/417 ,  H03K17/687

Abstract: A process of forming integrated electronic device having a semiconductor body includes: forming a first electrode region having a first type of conductivity; forming a second electrode region having a second type of conductivity, which forms a junction with the first electrode region; and forming a nanostructured semiconductor region, which extends in one of the first and second electrode regions.

公开(公告)号：US20180203076A1

公开(公告)日：2018-07-19

申请号：US15918809

申请日：2018-03-12

Applicant: STMicroelectronics S.r.l.

Inventor： Marco Crescentini ,  Marco Tartagni ,  Aldo Romani ,  Roberto Canegallo ,  Marco Marchesi ,  Domenico Cristaudo

IPC: G01R33/07 ,  G01R33/00 ,  G01R33/02 ,  G01R33/038 ,  G01R33/028 ,  G01R15/20 ,  G01R33/12

Abstract: A Hall sensor may include a Hall sensing element configured to produce a Hall voltage indicative of a magnetic field when traversed by an electric current, and a first pair of bias electrodes mutually opposed in a first direction across the Hall sensing element. The Hall sensor may include a second pair of bias electrodes mutually opposed in a second direction across the Hall sensing element. The Hall sensor may include a first pair of sensing electrodes mutually opposed in a third direction across the Hall sensing element, and a second pair of sensing electrodes mutually opposed in a fourth direction across the Hall sensing element. The fourth direction may be orthogonal to the third direction, each sensing electrode being between a bias electrode of the first pair and a bias electrode of the second pair.

公开(公告)号：US09952291B2

公开(公告)日：2018-04-24

申请号：US15142270

申请日：2016-04-29

Applicant: STMICROELECTRONICS S.R.L.

Inventor： Marco Crescentini ,  Marco Tartagni ,  Aldo Romani ,  Roberto Canegallo ,  Marco Marchesi ,  Domenico Cristaudo

IPC: G01R33/06 ,  G01R33/07 ,  G01R33/038 ,  G01R33/028 ,  G01R33/02 ,  G01R33/00 ,  G01R15/20 ,  G01R33/12

CPC classification number: G01R33/075 ,  G01R15/20 ,  G01R33/0029 ,  G01R33/0206 ,  G01R33/028 ,  G01R33/0283 ,  G01R33/038 ,  G01R33/07 ,  G01R33/1215

Abstract: A Hall sensor may include a Hall sensing element configured to produce a Hall voltage indicative of a magnetic field when traversed by an electric current, and a first pair of bias electrodes mutually opposed in a first direction across the Hall sensing element. The Hall sensor may include a second pair of bias electrodes mutually opposed in a second direction across the Hall sensing element. The Hall sensor may include a first pair of sensing electrodes mutually opposed in a third direction across the Hall sensing element, and a second pair of sensing electrodes mutually opposed in a fourth direction across the Hall sensing element. The fourth direction may be orthogonal to the third direction, each sensing electrode being between a bias electrode of the first pair and a bias electrode of the second pair.