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公开(公告)号：US11543749B2
公开(公告)日：2023-01-03
申请号：US17178794
申请日：2021-02-18
Applicant: SUMITOMO CHEMICAL COMPANY, LIMITED
Inventor： Masako Sugihara , Takashi Nishimura , Junji Nakanishi
Abstract: The present invention provides a resist composition which has sufficient resistant to a plating treatment and is capable of forming a resist pattern with high accuracy. The present invention also provides a method for producing a resist pattern using the resist composition, and a method for producing a plated molded article using the resist pattern. The present invention relates to a resist composition comprising a compound (I) having a quinone diazide sulfonyl group, a resin comprising a structural unit having an acid-labile group (A1), an alkali-soluble resin (A2) and an acid generator (B); a method for producing a resist pattern using the resist composition; and a method for producing a plated molded article using the resist pattern.
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公开(公告)号：US10365560B2
公开(公告)日：2019-07-30
申请号：US15085530
申请日：2016-03-30
Applicant: SUMITOMO CHEMICAL COMPANY, LIMITED
Inventor： Masako Sugihara , Junji Nakanishi , Takashi Nishimura
Abstract: A resist composition contains: a resin having a structural unit represented by formula (I), an alkali-soluble resin, an acid generator, and a solvent: wherein Ri51 represents a hydrogen atom or a methyl group, Ri52 and Ri53 each independently represent a hydrogen atom or a C1 to C12 hydrocarbon group, Ri54 represents a C5 to C20 alicyclic hydrocarbon group, Ri55 represents a C1 to C6 alkyl group or a C1 to C6 alkoxy group, and “p” represents an integer of 0 to 4.
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公开(公告)号：US09182663B2
公开(公告)日：2015-11-10
申请号：US13903770
申请日：2013-05-28
Applicant: SUMITOMO CHEMICAL COMPANY, LIMITED
Inventor： Masako Sugihara , Maki Kawamura
CPC classification number: G03F7/0041 , G03F7/0045 , G03F7/0392 , G03F7/0397 , G03F7/20 , G03F7/38
Abstract: A photoresist composition comprising: a resin which shows an increase in solubility in an aqueous alkali solution by an action of an acid; an acid generator; a compound represented by formula (I); and a solvent the amount of which is from 40 to 75% by mass of the total amount of the photoresist composition: wherein the ring W1 is a nitrogen-containing heterocyclic ring, or a benzene ring having a substituted or unsubstituted amino group, A1 represents a phenyl group or a naphtyl group, and n represents an integer of 2 or 3.
Abstract translation: 一种光致抗蚀剂组合物，其包含：通过酸的作用显示在碱性水溶液中的溶解度增加的树脂; 酸发生器; 由式（I）表示的化合物; 和其量为光致抗蚀剂组合物总量的40〜75质量％的溶剂：其中，环W1为含氮杂环，或具有取代或未取代的氨基的苯环，A1表示 苯基或萘基，n表示2或3的整数。
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Patent Agency Ranking
公开(公告)号：US12164229B2
公开(公告)日：2024-12-10
申请号：US16724455
申请日：2019-12-23
Applicant: SUMITOMO CHEMICAL COMPANY, LIMITED
Inventor： Masako Sugihara , Mutsuko Higo
Abstract: A resist composition includes a novolak resin in which a hydroxy group is substituted with a group represented by formula (3), an acid generator, a quencher, and a solvent: wherein, in formula (3), Ra10 represents a hydrocarbon group having 1 to 20 carbon atoms (e.g., a chain hydrocarbon group such as an alkyl group, an alkenyl group and an alkynyl group, an alicyclic hydrocarbon group, an aromatic hydrocarbon group, groups formed by combining these groups, etc.) and * represents a bond.
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公开(公告)号：US09740097B2
公开(公告)日：2017-08-22
申请号：US15085220
申请日：2016-03-30
Applicant: SUMITOMO CHEMICAL COMPANY, LIMITED
Inventor： Masako Sugihara , Junji Nakanishi
CPC classification number: G03F7/0045 , G03F7/0392 , G03F7/0397 , G03F7/0751 , G03F7/085 , G03F7/30
Abstract: A resist composition contains: a resin having an acid-labile group, an acid generator, a compound having two or more phenolic-hydroxy groups and being other than a resin, and a solvent. The resist composition of the disclosure can provide a resist pattern showing excellent shape and detachability, therefore, the present resist composition can be used for semiconductor microfabrication with resist patterns showing excellent shape.
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公开(公告)号：US11561471B2
公开(公告)日：2023-01-24
申请号：US15371702
申请日：2016-12-07
Applicant: SUMITOMO CHEMICAL COMPANY, LIMITED
Inventor： Masako Sugihara , Takashi Nishimura , Hiromu Sakamoto
IPC: G03F7/039 , G03F7/30 , G03F7/38 , C08F220/28 , C08F220/18
Abstract: A photoresist composition comprising:
a resin which has a structural unit represented by formula (I): wherein R1 represents a hydrogen atom, a halogen atom, or a C1 to C6 alkyl group which optionally has a halogen atom, and R2 represents a C1 to C42 hydrocarbon group which optionally has a substituent; an alkali-soluble resin;
an acid generator; and
a solvent.-
公开(公告)号：US10969685B2
公开(公告)日：2021-04-06
申请号：US14491120
申请日：2014-09-19
Applicant: SUMITOMO CHEMICAL COMPANY, LIMITED
Inventor： Masako Sugihara , Maki Kawamura , Maiko Goda
Abstract: A photoresist composition comprising: a resin which has an acid-labile group; an acid generator; a compound which has a sulfide bond and a mercapto group; and a solvent.
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公开(公告)号：US10101657B2
公开(公告)日：2018-10-16
申请号：US15085443
申请日：2016-03-30
Applicant: SUMITOMO CHEMICAL COMPANY, LIMITED
Inventor： Masako Sugihara , Takashi Nishimura
IPC: G03F7/004 , G03F7/30 , C08F212/02 , C08F216/10 , C08F216/12 , C08F216/14 , G03F7/039 , G03F7/075 , G03F7/085
Abstract: A resist composition contains: a resin having an acid-labile group, a resin having a structural unit represented by formula (I), an acid generator, and a solvent; wherein Ri41 represents a hydrogen atom or a methyl group, Ri42 represents a C1 to C10 hydrocarbon group that may be substituted with a hydroxy group, a C2 to C7 acyl group or a hydrogen atom, Ri43 in each occurrence independently represents a C1 to C6 alkyl group or a C1 to C6 alkoxy group, “p” represents an integer of 0 to 4, Z represents a divalent C3 to C20 hydrocarbon group having a group represented by formula (Ia), and a methylene group contained in the hydrocarbon group may be replaced by an oxygen atom, a sulfur atom or a carbonyl group, *—[(CH2)w—O]r— (Ia): wherein “w” and “r” each independently represents an integer of 1 to 10, and * represent a bonding position.
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