公开(公告)号：US11800808B2

公开(公告)日：2023-10-24

申请号：US16942813

申请日：2020-07-30

申请人： SUMITOMO CHEMICAL COMPANY, LIMITED

发明人： Kenji Shibata ,  Kazutoshi Watanabe ,  Toshiaki Kuroda

IPC分类号： H01L41/187 ,  H01L41/27 ,  H01L41/08 ,  H01L41/314 ,  H10N30/853 ,  H10N30/05 ,  H10N30/074 ,  H10N30/00

CPC分类号： H10N30/8542 ,  H10N30/05 ,  H10N30/074 ,  H10N30/10516

摘要： There is provided a piezoelectric stack, including: a substrate; an electrode film; and a piezoelectric film which is comprised of alkali niobium oxide of a perovskite structure represented by a composition formula of (K1-xNax)NbO3 (0

公开(公告)号：US11862443B2

公开(公告)日：2024-01-02

申请号：US17087333

申请日：2020-11-02

申请人： SUMITOMO CHEMICAL COMPANY, LIMITED

发明人： Toshiaki Kuroda ,  Mikio Takigawa

IPC分类号： H01J37/34 ,  C23C14/34 ,  C23C14/35 ,  C23C14/14 ,  C23C14/16

CPC分类号： H01J37/3423 ,  C23C14/14 ,  C23C14/165 ,  C23C14/3407 ,  C23C14/35 ,  H01J37/3405 ,  H01J37/3426

摘要： A sputtering target comprising a target material, wherein a sputtering face of the target material has a ramp provided to reduce a thickness of the target material at a position where erosion concentrates most intensively during sputtering.

公开(公告)号：US11532468B2

公开(公告)日：2022-12-20

申请号：US15112242

申请日：2015-01-20

申请人： SUMITOMO CHEMICAL COMPANY, LIMITED

发明人： Mikio Takigawa ,  Toshiaki Kuroda

IPC分类号： H01J37/34 ,  C23C14/34

摘要： Objects of the present invention consist in achievement of both of elongation of life of a sputtering target as well as uniformity of a thickness of a resulting thin coating layer formed on a substrate during the period. The present invention provides a sputtering target comprising a target material, which is characterized in that the target material has a sputtering surface having a first area placed at the center, which is circular and flat; and a second area placed outside of the first area and concentrically with the first area, which has a ring shape, wherein the first area is positioned at a location lower than that of the second area by 15% of thickness of the second area at most, and the first area has a diameter which is ranging from 60% to 80% of a circumferential diameter of the sputtering surface.

公开(公告)号：US10861684B2

公开(公告)日：2020-12-08

申请号：US15935605

申请日：2018-03-26

申请人： SUMITOMO CHEMICAL COMPANY, LIMITED

发明人： Toshiaki Kuroda ,  Mikio Takigawa

IPC分类号： H01J37/34 ,  C23C14/34 ,  C23C14/35 ,  C23C14/14 ,  C23C14/16

摘要： A sputtering target comprising a target material, wherein a sputtering face of the target material has a ramp provided to reduce a thickness of the target material at a position where erosion concentrates most intensively during sputtering.