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    Semiconductor laser device
    3.
    发明授权
    Semiconductor laser device 失效
    半导体激光器件

    公开(公告)号：US4769822A

    公开(公告)日：1988-09-06

    申请号：US910530

    申请日：1986-09-23

    申请人： Takahiro Suyama ,  Kohsei Takahashi ,  Saburo Yamamoto ,  Toshiro Hayakawa ,  Masafumi Kondo

    发明人： Takahiro Suyama ,  Kohsei Takahashi ,  Saburo Yamamoto ,  Toshiro Hayakawa ,  Masafumi Kondo

    IPC分类号： H01S5/00 ,  H01S5/12 ,  H01S5/20 ,  H01S5/223 ,  H01S5/34 ,  H01S3/19

    CPC分类号： H01S5/12 ,  H01S5/1237 ,  H01S5/2059 ,  H01S5/2231 ,  H01S5/3428

    摘要： A semiconductor laser device comprising a laser oscillation-operating area containing a first cladding layer, an active layer, an optical guiding layer and a second cladding layer in that order, wherein a striped impurity-diffusion region is formed into said second cladding layer from one facet to the other facet and a plurality of narrow strips of GaAs with a spaced pitch are formed in parallel with both facets in the region, except for the region corresponding to said striped diffusion region, which is positioned at the interface between the optical guiding layer and the second cladding layer.

    摘要翻译： 一种半导体激光器件，包括依次包含第一包层，有源层，光导层和第二包层的激光振荡操作区域，其中从一个第一包层形成带状杂质扩散区域 除了对应于所述条纹扩散区域的区域之外，与该区域中的两个小平面平行地形成具有间隔的间距的多个窄带的GaAs的另一个面和多个窄带的GaAs，所述区域位于光引导层 和第二覆层。

    Semiconductor laser
    6.
    发明授权
    Semiconductor laser 失效
    半导体激光器

    公开(公告)号：US4835783A

    公开(公告)日：1989-05-30

    申请号：US41483

    申请日：1987-04-23

    申请人： Takahiro Suyama ,  Toshiro Hayakawa ,  Kohsei Takahashi ,  Masafumi Kondo ,  Saburo Yamamoto

    发明人： Takahiro Suyama ,  Toshiro Hayakawa ,  Kohsei Takahashi ,  Masafumi Kondo ,  Saburo Yamamoto

    IPC分类号： H01S5/00 ,  H01S5/22 ,  H01S5/34 ,  H01S5/343 ,  H01S5/40

    CPC分类号： B82Y20/00 ,  H01S5/22 ,  H01S5/4031 ,  H01S5/2202 ,  H01S5/3428 ,  H01S5/3432

    摘要： A semiconductor device is formed by sequentially forming a first clad layer, active layer, second clad layer, and cap layer from, for example, an AlGaAs layer with an AlAs mixing ratio of .gtoreq.0.4, on a substrate made of GaAs or the like by MBE, MOCVD or another high precision growth process. Then AlGaAs layer is selectively removed only in the vicinity of formed ridges, and in this part, grooves on two stripes are formed from the cap layer surface, leaving the second clad layer with an intact thickness of, for example, only 3000 .ANG.. An insulation layer made of, for example, SiN is then formed in the groove area and the AlGaAs layer region, thereby creating a current stripe structure, in which only two grooves provide for current passages, that is, the light-emitting regions. In this structure, the thickness of the mesa pattern (ridge part) between the two grooves may be a minimum limit and the processing precision may be improved, while by properly selecting the thickness of the AlGaAs layer, a sufficiently large distance may be set between the mount surface and the active layer, so that the problem of solder climbing-up along the device end surface may be prevented. When the AlAs mixing ratio is controlled at 0.4 in the AlGaAs layer, it is possible to easily remove portions thereof selectively, by using hydrogen fluoride.

    摘要翻译： 半导体器件通过从例如AlAs混合比为> / = 0.4的AlGaAs层顺序地形成第一覆盖层，有源层，第二覆盖层和覆盖层而形成，所述AlGaAs层在由GaAs制成的衬底上或 像MBE，MOCVD或另一个高精度增长过程。 然后，仅在形成的脊的附近选择性地除去AlGaAs层，并且在该部分中，由盖层表面形成两个条纹上的槽，留下第二覆层的完整厚度例如仅为3000安。 然后在沟槽区域和AlGaAs层区域中形成例如由SiN制成的绝缘层，从而产生电流条纹结构，其中只有两个沟槽提供电流通路，即发光区域。 在这种结构中，两个槽之间的台面图案（脊部）的厚度可以是最小限度，并且可以提高加工精度，而通过适当地选择AlGaAs层的厚度，可以设置足够大的距离 安装表面和有源层，从而可以防止沿着器件端面向上爬焊的问题。 当在AlGaAs层中AlAs混合比控制在0.4时，可以通过使用氟化氢来选择性地容易地去除它们的部分。

    Semiconductor laser device
    10.
    发明授权
    Semiconductor laser device 失效
    半导体激光器件

    公开(公告)号：US4899349A

    公开(公告)日：1990-02-06

    申请号：US285342

    申请日：1988-12-14

    申请人： Toshiro Hayakawa ,  Takahiro Suyama ,  Kohsei Takahashi ,  Masafumi Kondo ,  Saburo Yamamoto

    发明人： Toshiro Hayakawa ,  Takahiro Suyama ,  Kohsei Takahashi ,  Masafumi Kondo ,  Saburo Yamamoto

    IPC分类号： H01S5/00 ,  H01S5/20 ,  H01S5/223 ,  H01S5/323

    CPC分类号： H01S5/2231 ,  H01S5/2081 ,  H01S5/209 ,  H01S5/32316

    摘要： A double-heterostructure multilayered crystal structure in a semiconductor laser device contains an active layer for laser oscillation. A striped etching-protective thin layer is formed on the double-heterostructure multilayered crystal. A striped-mesa multilayered crystal is formed on the striped etching-protective thin layer. A burying layer is formed on the double-heterostructure multilayered crystal outside of both the striped thin layer and striped-mesa multilayered crystal. This provides refractive index distributions within the active layer corresponding to the inside and the outside of the striped-mesa multilayered crystal. Further, it provides a striped structure which functions as a current path composed of the striped-mesa multilayered crystal.

    摘要翻译： 半导体激光器件中的双异质结构多层晶体结构包含用于激光振荡的有源层。 在双异质结构多层晶体上形成条纹蚀刻保护薄层。 在条纹蚀刻保护薄层上形成条状台面多层晶体。 在条纹薄层和条纹 - 台面多层晶体之外的双异质结构多层晶体上形成掩埋层。 这提供了对应于条状台面多层晶体的内部和外部的有源层内的折射率分布。 此外，它提供了条纹结构，其作为由条状台面多层晶体组成的电流路径。