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199 条记录 (耗时 0.036 秒)

    Semiconductor laser device
    5.
    发明授权
    Semiconductor laser device 失效
    半导体激光器件

    公开(公告)号：US5206185A

    公开(公告)日：1993-04-27

    申请号：US707449

    申请日：1991-05-30

    申请人： Hiroyuki Hosoba ,  Mitsuhiro Matsumoto ,  Sadayoshi Matsui ,  Taiji Morimoto

    发明人： Hiroyuki Hosoba ,  Mitsuhiro Matsumoto ,  Sadayoshi Matsui ,  Taiji Morimoto

    IPC分类号： H01S5/10 ,  H01S5/16 ,  H01S5/223 ,  H01S5/24

    CPC分类号： H01S5/10 ,  H01S5/16 ,  H01S5/2234 ,  H01S5/2235 ,  H01S5/24

    摘要： A semiconductor laser device is disclosed which comprises a semiconductor substrate having a ridge portion, the width of the ridge portion being smaller in the vicinity of the facets than in the inside of the device; a current blocking layer formed on the substrate including the ridge portion; at least one striped groove formed on the center of the ridge portion through the current blocking layer; and a multi-layered structure disposed on the current blocking layer, the multi-layered structure successively having a first current blocking layer, an active layer for laser oscillation, and a second current blocking layer; wherein at least two side grooves are symmetrically formed on both sides of the center region of the ridge portion with the same width as that of the regions thereof near the facets. Also, disclosed is a method for producing the semiconductor laser device.

    摘要翻译： 公开了一种半导体激光器件，其包括具有脊部的半导体衬底，脊部的宽度在小面附近比在器件内部更小; 形成在包括所述脊部的所述基板上的电流阻挡层; 通过所述电流阻挡层形成在所述脊部的中心的至少一个条纹槽; 以及设置在电流阻挡层上的多层结构，所述多层结构依次具有第一电流阻挡层，激光振荡用有源层和第二电流阻挡层; 其中至少两个侧槽在脊部的中心区域的两侧以与其附近的区域宽度相同的宽度对称地形成。 另外，公开了半导体激光装置的制造方法。

    Semiconductor laser array device
    9.
    发明授权
    Semiconductor laser array device 失效
    半导体激光阵列器件

    公开(公告)号：US4903274A

    公开(公告)日：1990-02-20

    申请号：US195742

    申请日：1988-05-18

    申请人： Mototaka Taneya ,  Mitsuhiro Matsumoto ,  Sadayoshi Matsui ,  Hiroyuki Hosoba

    发明人： Mototaka Taneya ,  Mitsuhiro Matsumoto ,  Sadayoshi Matsui ,  Hiroyuki Hosoba

    IPC分类号： H01S5/40

    CPC分类号： H01S5/4068

    摘要： A semiconductor laser array device comprising a substrate with a plurality of grooves and an active layer disposed over the substrate, resulting in optical waveguides within the active layer corresponding to the grooves, wherein the grooves are disposed over the entire area of the substrate and a means for preventing the injection of current into some of the grooves that are positioned outside of the central area of the substrate is disposed whereby the other grooves positioned in the central area of the substrate consitute a laser array portion of the semiconductor laser array device.

    摘要翻译： 一种半导体激光器阵列器件，包括具有多个沟槽的衬底和设置在衬底上的有源层，从而产生与沟槽对应的有源层内的光波导，其中沟槽设置在衬底的整个区域上， 用于防止将电流注入到位于基板的中心区域外部的一些凹槽中，由此位于基板的中心区域中的其它凹槽构成半导体激光器阵列器件的激光器阵列部分。

    Semiconductor laser array device
    10.
    发明授权
    Semiconductor laser array device 失效
    半导体激光阵列器件

    公开(公告)号：US4856015A

    公开(公告)日：1989-08-08

    申请号：US203469

    申请日：1988-06-07

    申请人： Sadayoshi Matsui ,  Mototaka Taneya ,  Mitsuhiro Matsumoto ,  Hiroyuki Hosoba

    发明人： Sadayoshi Matsui ,  Mototaka Taneya ,  Mitsuhiro Matsumoto ,  Hiroyuki Hosoba

    IPC分类号： H01S5/00 ,  H01S5/02 ,  H01S5/024 ,  H01S5/40

    CPC分类号： H01S5/02461 ,  H01L24/32 ,  H01S5/02 ,  H01S5/4068 ,  H01L2924/12042

    摘要： A semiconductor laser array device has a relatively wide light-emitting area with many semiconductor lasers and a shielding layer selectively disposed with respect to peripheral regions of the light-emitting area such that the rate of heat emission from the center part can be increased relative to that from the peripheral regions. Temperature distribution on the light-emitting area can thus be made uniform and laser light can be emitted from the entire laser emitting area under a phase-synchronized condition.

    摘要翻译： 半导体激光器阵列器件具有相当宽的发光面积，具有许多半导体激光器和相对于发光区域的周边区域选择性地布置的屏蔽层，使得来自中心部分的热发射速率可以相对于 来自周边地区。 因此，在相位同步状态下，可以使发光区域的温度分布均匀，从整个激光发射区域发射激光。