Constrained Optimization Of Lithographic Source Intensities Under Contingent Requirements
    1.
    发明申请
    Constrained Optimization Of Lithographic Source Intensities Under Contingent Requirements 失效
    有限要求的光刻源强度的约束优化

    公开(公告)号:US20110096313A1

    公开(公告)日:2011-04-28

    申请号:US12605732

    申请日:2009-10-26

    IPC分类号: G03B27/54

    摘要: A method for illuminating a mask to project a desired image pattern into a photoactive material is described. The method includes receiving an image pattern. Determining a relationship between source pixels in a set of source pixels to desired intensities at one or more points in the image pattern is performed. Linear constraints are imposed on a set of intensity values based on one or more contingent intensity condition. The contingent intensity conditions include integer variables specifying contingent constraints. The method includes determining values of the set of intensity values in accordance with the linear constraints, using a constrained optimization algorithm. The set of intensity values represents intensities of a set of source pixels. The set of intensity values are output. Apparatus and computer readable storage media are also described.

    摘要翻译: 描述了用于照射掩模以将期望的图像图案投影到光活性材料中的方法。 该方法包括接收图像图案。 确定一组源像素中的源像素与图像图案中的一个或多个点处的期望强度之间的关系。 基于一个或多个偶然强度条件对一组强度值施加线性约束。 偶然强度条件包括规定偶然约束的整数变量。 该方法包括使用约束优化算法根据线性约束来确定强度值集合的值。 强度值集合表示一组源像素的强度。 输出强度值集合。 还描述了装置和计算机可读存储介质。

    High Contrast Lithographic Masks
    2.
    发明申请
    High Contrast Lithographic Masks 有权
    高对比度平版印刷面膜

    公开(公告)号:US20100283982A1

    公开(公告)日:2010-11-11

    申请号:US12463742

    申请日:2009-05-11

    IPC分类号: G03B27/54

    CPC分类号: G03B27/54 G03F1/34

    摘要: A structure and a method for an equi-brightness optimization. The method may include projecting a plurality of bright patterns having a plurality of bright points and a plurality of dark patterns having a plurality of dark points on a substrate, generating a plurality of joint eigenvectors of the plurality of bright points and a plurality of dark points, selecting a predetermined number of joint eigenvectors to project the plurality of bright patterns, generating a plurality of natural sampling points from the plurality of bright points, wherein the plurality of natural sampling points has a substantially equal intensity, and obtaining a representation of an aperture from the plurality of natural sampling points, wherein an image of the representation of the aperture has a substantially uniform intensity.

    摘要翻译: 用于等亮度优化的结构和方法。 该方法可以包括在衬底上投影具有多个亮点的多个亮图案和具有多个暗点的多个暗图案,产生多个亮点的多个联合特征向量和多个暗点 选择预定数量的联合特征向量以投影所述多个亮图案,从所述多个亮点生成多个自然采样点,其中所述多个自然采样点具有基本相等的强度,并且获得孔径的表示 从所述多个天然采样点开始,其中所述孔的表示的图像具有基本均匀的强度。

    Method for generating a plurality of optimized wavefronts for a multiple exposure lithographic process
    3.
    发明授权
    Method for generating a plurality of optimized wavefronts for a multiple exposure lithographic process 失效
    用于产生用于多次曝光光刻工艺的多个优化波前的方法

    公开(公告)号:US08495528B2

    公开(公告)日:2013-07-23

    申请号:US12890854

    申请日:2010-09-27

    IPC分类号: G06F17/50

    CPC分类号: G03F7/70466 G03F1/70

    摘要: A simplified version of a multiexpose mask optimization problem is solved in order to find a compressed space in which to search for the solution to the full problem formulation. The simplification is to reduce the full problem to an unconstrained formulation. The full problem of minimizing dark region intensity while maintaining intensity above threshold at each bright point can be converted to the unconstrained problem of minimizing average dark region intensity per unit of average intensity in the bright regions. The extrema solutions to the simplified problem can be obtained for each source. This set of extrema solutions is then assessed to determine which features are predominantly printed by which source. A minimal set of extrema solutions serves as a space of reduced dimensionality within which to maximize the primary objective under constraints. The space typically has reduced dimensionality through selection of highest quality extrema solutions.

    摘要翻译: 解决了一个简化版本的多功能面罩优化问题,以便找到一个压缩空间,在该空间中搜索解决问题的全部问题。 简化是将完整的问题减少到无约束的公式。 将每个亮点处的强度保持在阈值以上的暗区强度最小化的问题可以转化为明亮区域每单位平均强度平均暗区强度最小化的无约束问题。 可以为每个源获得简化问题的极值解。 然后评估这组极值解决方案,以确定哪些特征主要由哪个来源打印。 最小的一组极值解决方案作为减小维数的空间,在这个空间内可以在约束条件下最大化主要目标。 该空间通常通过选择最高质量的极值解决方案降低维度。

    Method to match exposure tools using a programmable illuminator
    4.
    发明授权
    Method to match exposure tools using a programmable illuminator 失效
    使用可编程照明器匹配曝光工具的方法

    公开(公告)号:US08351037B2

    公开(公告)日:2013-01-08

    申请号:US12834379

    申请日:2010-07-12

    IPC分类号: G01B11/00

    摘要: Programmable illuminators in exposure tools are employed to increase the degree of freedom in tool matching. A tool matching methodology is provided that utilizes the fine adjustment of the individual source pixel intensity based on a linear programming (LP) problem subjected to user-specific constraints to minimize the difference of the lithographic wafer data between two tools. The lithographic data can be critical dimension differences from multiple targets and multiple process conditions. This LP problem can be modified to include a binary variable for matching sources using multi-scan exposure. The method can be applied to scenarios that the reference tool is a physical tool or a virtual ideal tool. In addition, this method can match different lithography systems, each including a tool and a mask.

    摘要翻译: 使用曝光工具中的可编程照明器来增加刀具匹配的自由度。 提供了一种工具匹配方法,其利用基于用户特定约束的线性规划(LP)问题对各个源像素强度的精细调整,以最小化两种工具之间的平版印刷晶片数据的差异。 光刻数据可以是来自多个目标和多个工艺条件的关键尺寸差异。 该LP问题可以修改为包括使用多次扫描曝光来匹配源的二进制变量。 该方法可以应用于参考工具是物理工具或虚拟理想工具的场景。 此外,该方法可以匹配不同的光刻系统,每个包括工具和掩模。

    METHOD FOR GENERATING A PLURALITY OF OPTIMIZED WAVEFRONTS FOR A MULTIPLE EXPOSURE LITHOGRAPHIC PROCESS
    5.
    发明申请
    METHOD FOR GENERATING A PLURALITY OF OPTIMIZED WAVEFRONTS FOR A MULTIPLE EXPOSURE LITHOGRAPHIC PROCESS 失效
    一种用于多次曝光的光刻过程产生多重优化波形的方法

    公开(公告)号:US20120077130A1

    公开(公告)日:2012-03-29

    申请号:US12890854

    申请日:2010-09-27

    IPC分类号: G03F7/20 G06F17/50

    CPC分类号: G03F7/70466 G03F1/70

    摘要: A simplified version of a multiexpose mask optimization problem is solved in order to find a compressed space in which to search for the solution to the full problem formulation. The simplification is to reduce the full problem to an unconstrained formulation. The full problem of minimizing dark region intensity while maintaining intensity above threshold at each bright point can be converted to the unconstrained problem of minimizing average dark region intensity per unit of average intensity in the bright regions. The extrema solutions to the simplified problem can be obtained for each source. This set of extrema solutions is then assessed to determine which features are predominantly printed by which source. A minimal set of extrema solutions serves as a space of reduced dimensionality within which to maximize the primary objective under constraints. The space typically has reduced dimensionality through selection of highest quality extrema solutions.

    摘要翻译: 解决了一个简化版本的多功能面罩优化问题,以便找到一个压缩空间,在该空间中搜索解决问题的全部问题。 简化是将完整的问题减少到无约束的公式。 将每个亮点处的强度保持在阈值以上的暗区强度最小化的问题可以转化为明亮区域每单位平均强度平均暗区强度最小化的无约束问题。 可以为每个源获得简化问题的极值解。 然后评估这组极值解决方案,以确定哪些特征主要由哪个来源打印。 最小的一组极值解决方案作为减小维数的空间,在这个空间内可以在约束条件下最大化主要目标。 该空间通常通过选择最高质量的极值解决方案降低维度。

    High contrast lithographic masks
    6.
    发明授权
    High contrast lithographic masks 有权
    高对比度光刻面具

    公开(公告)号:US07944545B2

    公开(公告)日:2011-05-17

    申请号:US12463742

    申请日:2009-05-11

    IPC分类号: G03B27/42 G03B27/52

    CPC分类号: G03B27/54 G03F1/34

    摘要: A structure and a method for an equi-brightness optimization. The method may include projecting a plurality of bright patterns having a plurality of bright points and a plurality of dark patterns having a plurality of dark points on a substrate, generating a plurality of joint eigenvectors of the plurality of bright points and a plurality of dark points, selecting a predetermined number of joint eigenvectors to project the plurality of bright patterns, generating a plurality of natural sampling points from the plurality of bright points, wherein the plurality of natural sampling points has a substantially equal intensity, and obtaining a representation of an aperture from the plurality of natural sampling points, wherein an image of the representation of the aperture has a substantially uniform intensity.

    摘要翻译: 用于等亮度优化的结构和方法。 该方法可以包括在衬底上投影具有多个亮点的多个亮图案和具有多个暗点的多个暗图案,产生多个亮点的多个联合特征向量和多个暗点 选择预定数量的联合特征向量以投影所述多个亮图案,从所述多个亮点生成多个自然采样点,其中所述多个自然采样点具有基本相等的强度,并且获得孔径的表示 从所述多个天然采样点开始,其中所述孔的表示的图像具有基本均匀的强度。

    Constrained optimization of lithographic source intensities under contingent requirements
    7.
    发明授权
    Constrained optimization of lithographic source intensities under contingent requirements 失效
    偶然要求下光刻源强度的约束优化

    公开(公告)号:US08605254B2

    公开(公告)日:2013-12-10

    申请号:US12605732

    申请日:2009-10-26

    IPC分类号: G03B27/54

    摘要: A method for illuminating a mask to project a desired image pattern into a photoactive material is described. The method includes receiving an image pattern. Determining a relationship between source pixels in a set of source pixels to desired intensities at one or more points in the image pattern is performed. Linear constraints are imposed on a set of intensity values based on one or more contingent intensity condition. The contingent intensity conditions include integer variables specifying contingent constraints. The method includes determining values of the set of intensity values in accordance with the linear constraints, using a constrained optimization algorithm. The set of intensity values represents intensities of a set of source pixels. The set of intensity values are output. Apparatus and computer readable storage media are also described.

    摘要翻译: 描述了用于照射掩模以将期望的图像图案投影到光活性材料中的方法。 该方法包括接收图像图案。 确定一组源像素中的源像素与图像图案中的一个或多个点处的期望强度之间的关系。 基于一个或多个偶然强度条件对一组强度值施加线性约束。 偶然强度条件包括规定偶然约束的整数变量。 该方法包括使用约束优化算法根据线性约束来确定强度值集合的值。 强度值集合表示一组源像素的强度。 输出强度值集合。 还描述了装置和计算机可读存储介质。

    Dynamic provisional decomposition of lithographic patterns having different interaction ranges
    8.
    发明授权
    Dynamic provisional decomposition of lithographic patterns having different interaction ranges 有权
    具有不同相互作用范围的光刻图案的动态临时分解

    公开(公告)号:US08266554B2

    公开(公告)日:2012-09-11

    申请号:US13204440

    申请日:2011-08-05

    IPC分类号: G06F17/50

    CPC分类号: G03F1/36 G03F1/68

    摘要: A method for obtaining mask and source patterns for printing integrated circuit patterns includes providing initial representations of a plurality of mask and source patterns. The method identifies long-range and short-range factors in the representations of the plurality of mask and source patterns, and provides a plurality of clips including a specified number of mask patterns. Short-range factors having overlapping ranges for each of the clips are specified. The method includes determining an initial processing priority for the plurality of clips, and determining a patterning relationship between integrated circuit patterns and the mask and source patterns. A primary objective is determined which expresses the printability of the integrated circuit patterns in terms of the patterning relationship. The method defines and iteratively solves a master problem employing the primary objective to generate values for the long-range factors, and solves subproblems employing a second objective for generating values for the short-range factors.

    摘要翻译: 用于获得用于打印集成电路图案的掩模和源图案的方法包括提供多个掩模和源图案的初始表示。 该方法识别多个掩模和源图案的表示中的长距离和短距离因子,并且提供包括指定数量的掩模图案的多个剪辑。 指定具有每个剪辑的重叠范围的短距离因子。 该方法包括确定多个剪辑的初始处理优先级,以及确定集成电路图案与掩模和源图案之间的图案化关系。 根据图案化关系确定表示集成电路图案的可印刷性的主要目的。 该方法定义并迭代地解决了使用主要目标生成长距离因子值的主问题,并且解决了使用第二个目标生成短距离因子值的子问题。

    Wavefront engineering of mask data for semiconductor device design
    9.
    发明授权
    Wavefront engineering of mask data for semiconductor device design 有权
    用于半导体器件设计的掩模数据的波前工程

    公开(公告)号:US08453076B2

    公开(公告)日:2013-05-28

    申请号:US12725287

    申请日:2010-03-16

    IPC分类号: G06F17/50

    摘要: Optical wave data for a semiconductor device design is divided into regions. First wavefront engineering is performed on the wave data of each region, accounting for just the wave data of each region and not accounting for the wave data of neighboring regions of each region. The optical wave data of each region is normalized based on results of the first wavefront engineering. Second wavefront engineering is performed on the wave data of each region, based at least on the wave data of each region as has been normalized. The second wavefront engineering takes into account the wave data of each region and a guard band around each region that includes the wave data of the neighboring regions of each region. The second wavefront engineering can be sequentially performed by organizing the regions into groups, and sequentially performing the second wavefront engineering on the regions of each group in parallel.

    摘要翻译: 半导体器件设计的光波数据分为几个区域。 对每个区域的波形数据执行第一波前工程,仅考虑每个区域的波形数据,不考虑每个区域的相邻区域的波形数据。 基于第一波前工程的结果对每个区域的光波数据进行归一化。 至少基于已经归一化的每个区域的波形数据,对每个区域的波形数据执行第二波前工程。 第二波前工程考虑了每个区域的波形数据和围绕每个区域的保护带,其包括每个区域的相邻区域的波形数据。 可以通过将区域组合成组并且顺序地在并行地对每个组的区域执行第二波前工程来顺序执行第二波前工程。

    Method for optimizing source and mask to control line width roughness and image log slope
    10.
    发明授权
    Method for optimizing source and mask to control line width roughness and image log slope 有权
    优化源和掩码以控制线宽粗糙度和图像对数斜率的方法

    公开(公告)号:US08372565B2

    公开(公告)日:2013-02-12

    申请号:US12872312

    申请日:2010-08-31

    IPC分类号: G03F9/00

    CPC分类号: G03F1/70 G03F7/70433

    摘要: A method for illuminating a mask with a source to project a desired image pattern through a lithographic system onto a photoactive material including: defining a representation of the mask; obtaining a fractional resist shot noise (FRSN) parameter; determining a first relationship between a first set of optical intensity values and an edge roughness metric based on the FRSN parameter; determining a second relationship between a second set of optical intensity values and a lithographic performance metric; imposing a set of metric constraints based on one of the first and second relationships; setting up an objective function of optimization based on the remaining of the two relationships; determining optimum constrained values of the representation of the mask based on the set of metric constraints and the objective function; and outputting these values.

    摘要翻译: 一种用源照射掩模的方法,用于通过光刻系统将期望的图像图案投影到光活性材料上,包括:限定掩模的表示; 获得分数抗蚀散射噪声(FRSN)参数; 基于所述FRSN参数确定第一组光强度值与边缘粗糙度度量之间的第一关系; 确定第二组光强度值和光刻性能度量之间的第二关系; 基于所述第一和第二关系之一施加一组度量约束; 基于剩余的两个关系建立优化的目标函数; 基于所述度量约束和所述目标函数的集合来确定所述掩码的表示的最佳约束值; 并输出这些值。