METHOD OF FORMING WAVEGUIDE FACET AND PHOTONICS DEVICE USING THE METHOD
    1.
    发明申请
    METHOD OF FORMING WAVEGUIDE FACET AND PHOTONICS DEVICE USING THE METHOD 审中-公开
    使用该方法形成波长面和光子器件的方法

    公开(公告)号:US20110135265A1

    公开(公告)日:2011-06-09

    申请号:US12842287

    申请日:2010-07-23

    CPC classification number: G02B6/13

    Abstract: Provided are a method of forming a waveguide facet and a photonics device using the method. The method includes forming at least one optical device die including waveguides on a substrate, forming at least one trench in a lower surface of the substrate, and cleaving the substrate to form facets of the waveguides over the trench. The trench is formed along a direction crossing the waveguides under the waveguides.

    Abstract translation: 提供了使用该方法形成波导面和光子器件的方法。 所述方法包括在衬底上形成至少一个包括波导的光学器件裸片,在衬底的下表面中形成至少一个沟槽,并且切割衬底以在沟槽上形成波导的刻面。 沿着与波导下方的波导交叉的方向形成沟槽。

    PHOTONICS DEVICE
    2.
    发明申请
    PHOTONICS DEVICE 审中-公开
    光电设备

    公开(公告)号:US20100110546A1

    公开(公告)日:2010-05-06

    申请号:US12541710

    申请日:2009-08-14

    CPC classification number: G02B6/305 G02B6/264 G02B6/32

    Abstract: Provided is a photonics device. The photonics device includes a distribution Bragg reflector (DBR), first and second waveguides disposed at both sides of the DBR, first lenses disposed between the DBR and the first waveguides, and second lenses disposed between the DBR and the second waveguides.

    Abstract translation: 提供了一种光子器件。 光子器件包括分布布拉格反射器(DBR),布置在DBR的两侧的第一和第二波导,设置在DBR和第一波导之间的第一透镜以及设置在DBR和第二波导之间的第二透镜。

    METHOD OF FABRICATING SEMICONDUCTOR DEVICE UNCONSTRAINED BY OPTICAL LIMIT AND APPARATUS OF FABRICATING THE SEMICONDUCTOR DEVICE
    3.
    发明申请
    METHOD OF FABRICATING SEMICONDUCTOR DEVICE UNCONSTRAINED BY OPTICAL LIMIT AND APPARATUS OF FABRICATING THE SEMICONDUCTOR DEVICE 审中-公开
    制造光限制半导体器件的方法和制造半导体器件的设备

    公开(公告)号:US20100130010A1

    公开(公告)日:2010-05-27

    申请号:US12538080

    申请日:2009-08-07

    Abstract: Provided are a method of fabricating a semiconductor device unconstrained by optical limit and an apparatus of fabricating the semiconductor device. The method includes: forming an etch target layer on a substrate; forming a hard mask layer on the etch target layer; forming first mask patterns on the hard mask layer; forming first spacers on sidewalls of the first mask patterns; forming hard mask patterns having an opening by using the first mask patterns and the first spacers as a mask to etch the hard mask layer; aligning second mask patterns on the hard mask patterns to fill the opening; forming second spacers on sidewalls of the second mask patterns; forming fine mask patterns by using the second mask patterns and the second spacers as a mask to etch the hard mask patterns; and forming fine patterns by using the fine mask patterns as a mask to etch the etch target layer.

    Abstract translation: 提供一种制造不受光学极限约束的半导体器件的方法和制造半导体器件的装置。 该方法包括:在衬底上形成蚀刻目标层; 在蚀刻靶层上形成硬掩模层; 在硬掩模层上形成第一掩模图案; 在所述第一掩模图案的侧壁上形成第一间隔物; 通过使用第一掩模图案和第一间隔物作为掩模形成具有开口的硬掩模图案以蚀刻硬掩模层; 对准硬掩模图案上的第二掩模图案以填充开口; 在所述第二掩模图案的侧壁上形成第二间隔物; 通过使用第二掩模图案和第二间隔物作为掩模来形成精细的掩模图案以蚀刻硬掩模图案; 并通过使用精细掩模图案作为掩模来形成精细图案以蚀刻蚀刻目标层。

    METHOD OF TUNING RESONANCE WAVELENGTH OF RING RESONATOR
    4.
    发明申请
    METHOD OF TUNING RESONANCE WAVELENGTH OF RING RESONATOR 失效
    调谐谐振器谐振波长的方法

    公开(公告)号:US20120081197A1

    公开(公告)日:2012-04-05

    申请号:US13175567

    申请日:2011-07-01

    CPC classification number: H01P7/088 G02F1/0147 G02F1/3132 H01P1/2135

    Abstract: Provided is a method of tuning a resonance wavelength of a ring resonator. The method of tuning the resonance wavelength of a ring resonator includes preparing a ring resonator which contains a ring waveguide and a dielectric layer covering the ring waveguide, and heating the ring resonator to induce a refractive index phase change of the dielectric layer.

    Abstract translation: 提供了调谐环形谐振器的谐振波长的方法。 调谐环形谐振器的谐振波长的方法包括制备环形谐振器,该环形谐振器包含环形波导和覆盖环形波导的电介质层,并且加热环形谐振器以引起电介质层的折射率相位变化。

    METHOD FOR TUNING WAVELENGTH OF OPTICAL DEVICE USING REFRACTIVE INDEX QUASI-PHASE CHANGE AND ETCHING
    5.
    发明申请
    METHOD FOR TUNING WAVELENGTH OF OPTICAL DEVICE USING REFRACTIVE INDEX QUASI-PHASE CHANGE AND ETCHING 审中-公开
    使用折射率指数进行相位变化和蚀刻来调谐光学器件的波长的方法

    公开(公告)号:US20130153533A1

    公开(公告)日:2013-06-20

    申请号:US13612467

    申请日:2012-09-12

    CPC classification number: G02B6/122

    Abstract: Methods for tuning a wavelength of an optical device are provided. According to the method, a core pattern may be formed on a substrate, a dielectric layer may be formed to cover the core pattern, and the dielectric layer may be thermally treated to increase a refractive index of the dielectric layer. The dielectric layer may include a silicon oxynitride layer.

    Abstract translation: 提供了调整光学器件的波长的方法。 根据该方法,可以在基板上形成芯图案,可以形成介电层以覆盖芯图案,并且可以对电介质层进行热处理以增加电介质层的折射率。 电介质层可以包括氧氮化硅层。

    OPTICAL VISION CHIP (OVC) AND IMAGE RECOGNITION METHOD USING THE SAME
    7.
    发明申请
    OPTICAL VISION CHIP (OVC) AND IMAGE RECOGNITION METHOD USING THE SAME 失效
    光学视觉芯片(OVC)和图像识别方法

    公开(公告)号:US20080131032A1

    公开(公告)日:2008-06-05

    申请号:US11930507

    申请日:2007-10-31

    CPC classification number: G06K9/74

    Abstract: Provided are an optical vision chip (OVC) and an image recognition method using the OVC. The OVC includes: a first display displaying an object image; a second display displaying a standard model image; and an optical sensor optically or electrically coupling the object image and the standard model image respectively displayed on the first and second displays and outputting a difference between the object image and the standard model image as an electrical signal.

    Abstract translation: 提供了一种光学视觉芯片(OVC)和使用OVC的图像识别方法。 OVC包括:显示对象图像的第一显示; 显示标准模型图像的第二显示器; 以及光学或电学耦合分别显示在第一和第二显示器上的对象图像和标准模型图像的光学传感器,并且将对象图像和标准模型图像之间的差作为电信号输出。

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