公开(公告)号：US20110135265A1

公开(公告)日：2011-06-09

申请号：US12842287

申请日：2010-07-23

Applicant: Sahnggi PARK ,  Kap-Joong Kim ,  Gyungock Kim

Inventor： Sahnggi PARK ,  Kap-Joong Kim ,  Gyungock Kim

IPC: G02B6/10 ,  C23F1/00

CPC classification number: G02B6/13

Abstract: Provided are a method of forming a waveguide facet and a photonics device using the method. The method includes forming at least one optical device die including waveguides on a substrate, forming at least one trench in a lower surface of the substrate, and cleaving the substrate to form facets of the waveguides over the trench. The trench is formed along a direction crossing the waveguides under the waveguides.

Abstract translation: 提供了使用该方法形成波导面和光子器件的方法。 所述方法包括在衬底上形成至少一个包括波导的光学器件裸片，在衬底的下表面中形成至少一个沟槽，并且切割衬底以在沟槽上形成波导的刻面。 沿着与波导下方的波导交叉的方向形成沟槽。

公开(公告)号：US20100110546A1

公开(公告)日：2010-05-06

申请号：US12541710

申请日：2009-08-14

Applicant: Sahnggi PARK ,  Kap-Joong Kim ,  In-Gyoo Kim ,  Gyungock Kim

Inventor： Sahnggi PARK ,  Kap-Joong Kim ,  In-Gyoo Kim ,  Gyungock Kim

IPC: G02B5/18

CPC classification number: G02B6/305 ,  G02B6/264 ,  G02B6/32

Abstract: Provided is a photonics device. The photonics device includes a distribution Bragg reflector (DBR), first and second waveguides disposed at both sides of the DBR, first lenses disposed between the DBR and the first waveguides, and second lenses disposed between the DBR and the second waveguides.

Abstract translation: 提供了一种光子器件。 光子器件包括分布布拉格反射器（DBR），布置在DBR的两侧的第一和第二波导，设置在DBR和第一波导之间的第一透镜以及设置在DBR和第二波导之间的第二透镜。

公开(公告)号：US20100303435A1

公开(公告)日：2010-12-02

申请号：US12555767

申请日：2009-09-08

Applicant: Sahnggi Park ,  Kap-Joong Kim ,  Duk Jun Kim ,  Gyungock Kim

Inventor： Sahnggi Park ,  Kap-Joong Kim ,  Duk Jun Kim ,  Gyungock Kim

IPC: G02B6/00 ,  G03F7/20

CPC classification number: G02B6/12007

Abstract: Provided are an optical device and a method of fabricating the same. The optical device includes: a substrate; and a ring resonator on the substrate. The ring resonator includes: a cladding layer including a lower cladding layer and an upper cladding layer on the substrate; a core including a plurality of rings between the lower cladding layer and the upper cladding layer; and an embeded layer interposed between the core and the cladding layer and having a refractive index less than that of the core and more than that of the cladding layer.

Abstract translation: 提供了一种光学器件及其制造方法。 光学装置包括：基板; 和在基板上的环形谐振器。 环形谐振器包括：在基板上包括下包层和上包层的包层; 芯包括在下包层和上包层之间的多个环; 以及插入在芯和包覆层之间并且折射率小于芯的折射率并且大于包覆层的折射率的嵌入层。

公开(公告)号：US08548281B2

公开(公告)日：2013-10-01

申请号：US12872881

申请日：2010-08-31

Applicant: Gyungock Kim ,  Jeong Woo Park ,  Jongbum You ,  Sang Gi Kim ,  Sanghoon Kim ,  In Gyoo Kim ,  Jiho Joo ,  Duk Jun Kim ,  Dongwoo Suh ,  Sahnggi Park ,  Ki Seok Jang ,  Junghyung Pyo ,  Kap-Joong Kim ,  Do Won Kim ,  Dae Seo Park

Inventor： Gyungock Kim ,  Jeong Woo Park ,  Jongbum You ,  Sang Gi Kim ,  Sanghoon Kim ,  In Gyoo Kim ,  Jiho Joo ,  Duk Jun Kim ,  Dongwoo Suh ,  Sahnggi Park ,  Ki Seok Jang ,  Junghyung Pyo ,  Kap-Joong Kim ,  Do Won Kim ,  Dae Seo Park

IPC: G02F1/025

CPC classification number: G02F1/025 ,  G02F2201/063

Abstract: Provided is an electro-optic modulating device. The electro-optic modulating device includes an optical waveguide with a vertical structure and sidewalls of the vertical structure are used to configure a junction.

Abstract translation: 提供了一种电光调制装置。 电光调制装置包括具有垂直结构的光波导，垂直结构的侧壁用于构造接合部。

公开(公告)号：US20130156369A1

公开(公告)日：2013-06-20

申请号：US13535746

申请日：2012-06-28

Applicant: Sahnggi Park ,  Kap-Joong Kim ,  In Gyoo Kim ,  Gyungock Kim

Inventor： Sahnggi Park ,  Kap-Joong Kim ,  In Gyoo Kim ,  Gyungock Kim

IPC: G02B6/12

CPC classification number: G02B6/12007 ,  G02B2006/12061

Abstract: Provided is a ring resonator including first and second waveguides disposed spaced apart from each other, on a substrate, and at least one channel including at least one ring waveguide arranged in a row between the first and second waveguides. The first and second waveguides and the ring waveguide may be formed of silicon, a width of the ring waveguide may range from 0.7 μm to 1.5 μm, a height of the ring waveguide may range from 150 nm to 300 nm, and a space between the first and second waveguides and the ring waveguide most adjacent thereto may range from 250 nm to 1 mm.

Abstract translation: 提供了一种环形谐振器，包括彼此间隔开地布置在衬底上的第一和第二波导，以及包括在第一和第二波导之间布置成一行的至少一个环形波导的至少一个通道。 第一和第二波导和环形波导可以由硅形成，环形波导的宽度可以在0.7μm到1.5μm的范围内，环形波导的高度可以在150nm到300nm的范围内， 第一和第二波导以及与其最相邻的环形波导可以在250nm至1mm的范围内。

公开(公告)号：US20100130010A1

公开(公告)日：2010-05-27

申请号：US12538080

申请日：2009-08-07

Applicant: Sahnggi PARK ,  Kap-Joong Kim ,  In-Gyoo Kim ,  Gyungock Kim

Inventor： Sahnggi PARK ,  Kap-Joong Kim ,  In-Gyoo Kim ,  Gyungock Kim

IPC: H01L21/308 ,  G01B11/27

CPC classification number: H01L21/0338 ,  G01B11/27 ,  G03F9/7069 ,  G03F9/7088 ,  H01L21/0337

Abstract: Provided are a method of fabricating a semiconductor device unconstrained by optical limit and an apparatus of fabricating the semiconductor device. The method includes: forming an etch target layer on a substrate; forming a hard mask layer on the etch target layer; forming first mask patterns on the hard mask layer; forming first spacers on sidewalls of the first mask patterns; forming hard mask patterns having an opening by using the first mask patterns and the first spacers as a mask to etch the hard mask layer; aligning second mask patterns on the hard mask patterns to fill the opening; forming second spacers on sidewalls of the second mask patterns; forming fine mask patterns by using the second mask patterns and the second spacers as a mask to etch the hard mask patterns; and forming fine patterns by using the fine mask patterns as a mask to etch the etch target layer.

Abstract translation: 提供一种制造不受光学极限约束的半导体器件的方法和制造半导体器件的装置。 该方法包括：在衬底上形成蚀刻目标层; 在蚀刻靶层上形成硬掩模层; 在硬掩模层上形成第一掩模图案; 在所述第一掩模图案的侧壁上形成第一间隔物; 通过使用第一掩模图案和第一间隔物作为掩模形成具有开口的硬掩模图案以蚀刻硬掩模层; 对准硬掩模图案上的第二掩模图案以填充开口; 在所述第二掩模图案的侧壁上形成第二间隔物; 通过使用第二掩模图案和第二间隔物作为掩模来形成精细的掩模图案以蚀刻硬掩模图案; 并通过使用精细掩模图案作为掩模来形成精细图案以蚀刻蚀刻目标层。

公开(公告)号：US08644657B2

公开(公告)日：2014-02-04

申请号：US13175567

申请日：2011-07-01

Applicant: Sahnggi Park ,  Gyungock Kim

Inventor： Sahnggi Park ,  Gyungock Kim

IPC: G02B6/26 ,  G02B6/42

CPC classification number: H01P7/088 ,  G02F1/0147 ,  G02F1/3132 ,  H01P1/2135

Abstract: Provided is a method of tuning a resonance wavelength of a ring resonator. The method of tuning the resonance wavelength of a ring resonator includes preparing a ring resonator which contains a ring waveguide and a dielectric layer covering the ring waveguide, and heating the ring resonator to induce a refractive index phase change of the dielectric layer.

Abstract translation: 提供了调谐环形谐振器的谐振波长的方法。 调谐环形谐振器的谐振波长的方法包括制备环形谐振器，该环形谐振器包含环形波导和覆盖环形波导的电介质层，并且加热环形谐振器以引起电介质层的折射率相位变化。

公开(公告)号：US20120081197A1

公开(公告)日：2012-04-05

申请号：US13175567

申请日：2011-07-01

Applicant: Sahnggi PARK ,  Gyungock Kim

Inventor： Sahnggi PARK ,  Gyungock Kim

IPC: H01P7/00

CPC classification number: H01P7/088 ,  G02F1/0147 ,  G02F1/3132 ,  H01P1/2135

Abstract: Provided is a method of tuning a resonance wavelength of a ring resonator. The method of tuning the resonance wavelength of a ring resonator includes preparing a ring resonator which contains a ring waveguide and a dielectric layer covering the ring waveguide, and heating the ring resonator to induce a refractive index phase change of the dielectric layer.

Abstract translation: 提供了调谐环形谐振器的谐振波长的方法。 调谐环形谐振器的谐振波长的方法包括制备环形谐振器，该环形谐振器包含环形波导和覆盖环形波导的电介质层，并且加热环形谐振器以引起电介质层的折射率相位变化。

公开(公告)号：US08761553B2

公开(公告)日：2014-06-24

申请号：US13302371

申请日：2011-11-22

Applicant: Sahnggi Park ,  Gyungock Kim ,  In Gyoo Kim ,  Jeong Woo Park ,  Sang Hoon Kim ,  Do Won Kim

Inventor： Sahnggi Park ,  Gyungock Kim ,  In Gyoo Kim ,  Jeong Woo Park ,  Sang Hoon Kim ,  Do Won Kim

IPC: G02B6/26 ,  G02B6/12

CPC classification number: H04J14/028 ,  G02B6/12007 ,  H01S5/026 ,  H01S5/1032 ,  H01S5/4087 ,  H04J14/02 ,  H04J14/0201

Abstract: Provided is an optical network structure. To configure an optical network structure between hundreds or more of cores in a CPU, intersection between waveguides does not occur, and thus, the optical network structure enables two-way communication between all the cores without an optical switch disposed in an intersection point. The present invention enables a single chip optical network using a silicon photonics optical element, and a CPU chip configured with hundreds or thousands of cores can be developed.

Abstract translation: 提供了一种光网络结构。 为了在CPU中配置数百个或更多个核心之间的光网络结构，不会发生波导之间的交叉，因此，光网络结构在所有核心之间实现双向通信，而光交换机不设置在交叉点。 本发明使得能够使用硅光子学光学元件的单芯片光网络，并且可以开发配置有数百或数千个核的CPU芯片。

公开(公告)号：US08859319B2

公开(公告)日：2014-10-14

申请号：US13612736

申请日：2012-09-12

Applicant: Sang Hoon Kim ,  Gyungock Kim ,  In Gyoo Kim ,  JiHo Joo ,  Ki Seok Jang

Inventor： Sang Hoon Kim ,  Gyungock Kim ,  In Gyoo Kim ,  JiHo Joo ,  Ki Seok Jang

IPC: H01L31/18

CPC classification number: H01L31/1804 ,  G02B6/12004 ,  G02B6/131 ,  H01L31/02327 ,  H01L31/103 ,  H01L31/1037 ,  H01L31/109 ,  Y02E10/547 ,  Y02P70/521

Abstract: Methods of forming photo detectors are provided. The method includes providing a semiconductor layer on a substrate, forming a trench in the semiconductor layer, forming a first single crystalline layer and a second single crystalline layer using a selective single crystalline growth process in the trench, and patterning the first and second single crystalline layers and the semiconductor layer to form a first single crystalline pattern, a second single crystalline pattern and an optical waveguide.

Abstract translation: 提供了形成光电检测器的方法。 该方法包括在衬底上提供半导体层，在半导体层中形成沟槽，在沟槽中使用选择性单晶生长工艺形成第一单晶层和第二单晶层，以及使第一和第二单晶 层和半导体层以形成第一单晶图案，第二单晶图案和光波导。