公开(公告)号：US20100303435A1

公开(公告)日：2010-12-02

申请号：US12555767

申请日：2009-09-08

Applicant: Sahnggi Park ,  Kap-Joong Kim ,  Duk Jun Kim ,  Gyungock Kim

Inventor： Sahnggi Park ,  Kap-Joong Kim ,  Duk Jun Kim ,  Gyungock Kim

IPC: G02B6/00 ,  G03F7/20

CPC classification number: G02B6/12007

Abstract: Provided are an optical device and a method of fabricating the same. The optical device includes: a substrate; and a ring resonator on the substrate. The ring resonator includes: a cladding layer including a lower cladding layer and an upper cladding layer on the substrate; a core including a plurality of rings between the lower cladding layer and the upper cladding layer; and an embeded layer interposed between the core and the cladding layer and having a refractive index less than that of the core and more than that of the cladding layer.

Abstract translation: 提供了一种光学器件及其制造方法。 光学装置包括：基板; 和在基板上的环形谐振器。 环形谐振器包括：在基板上包括下包层和上包层的包层; 芯包括在下包层和上包层之间的多个环; 以及插入在芯和包覆层之间并且折射率小于芯的折射率并且大于包覆层的折射率的嵌入层。

公开(公告)号：US08548281B2

公开(公告)日：2013-10-01

申请号：US12872881

申请日：2010-08-31

Applicant: Gyungock Kim ,  Jeong Woo Park ,  Jongbum You ,  Sang Gi Kim ,  Sanghoon Kim ,  In Gyoo Kim ,  Jiho Joo ,  Duk Jun Kim ,  Dongwoo Suh ,  Sahnggi Park ,  Ki Seok Jang ,  Junghyung Pyo ,  Kap-Joong Kim ,  Do Won Kim ,  Dae Seo Park

Inventor： Gyungock Kim ,  Jeong Woo Park ,  Jongbum You ,  Sang Gi Kim ,  Sanghoon Kim ,  In Gyoo Kim ,  Jiho Joo ,  Duk Jun Kim ,  Dongwoo Suh ,  Sahnggi Park ,  Ki Seok Jang ,  Junghyung Pyo ,  Kap-Joong Kim ,  Do Won Kim ,  Dae Seo Park

IPC: G02F1/025

CPC classification number: G02F1/025 ,  G02F2201/063

Abstract: Provided is an electro-optic modulating device. The electro-optic modulating device includes an optical waveguide with a vertical structure and sidewalls of the vertical structure are used to configure a junction.

Abstract translation: 提供了一种电光调制装置。 电光调制装置包括具有垂直结构的光波导，垂直结构的侧壁用于构造接合部。

公开(公告)号：US20110135265A1

公开(公告)日：2011-06-09

申请号：US12842287

申请日：2010-07-23

Applicant: Sahnggi PARK ,  Kap-Joong Kim ,  Gyungock Kim

Inventor： Sahnggi PARK ,  Kap-Joong Kim ,  Gyungock Kim

IPC: G02B6/10 ,  C23F1/00

CPC classification number: G02B6/13

Abstract: Provided are a method of forming a waveguide facet and a photonics device using the method. The method includes forming at least one optical device die including waveguides on a substrate, forming at least one trench in a lower surface of the substrate, and cleaving the substrate to form facets of the waveguides over the trench. The trench is formed along a direction crossing the waveguides under the waveguides.

Abstract translation: 提供了使用该方法形成波导面和光子器件的方法。 所述方法包括在衬底上形成至少一个包括波导的光学器件裸片，在衬底的下表面中形成至少一个沟槽，并且切割衬底以在沟槽上形成波导的刻面。 沿着与波导下方的波导交叉的方向形成沟槽。

公开(公告)号：US20100110546A1

公开(公告)日：2010-05-06

申请号：US12541710

申请日：2009-08-14

Applicant: Sahnggi PARK ,  Kap-Joong Kim ,  In-Gyoo Kim ,  Gyungock Kim

Inventor： Sahnggi PARK ,  Kap-Joong Kim ,  In-Gyoo Kim ,  Gyungock Kim

IPC: G02B5/18

CPC classification number: G02B6/305 ,  G02B6/264 ,  G02B6/32

Abstract: Provided is a photonics device. The photonics device includes a distribution Bragg reflector (DBR), first and second waveguides disposed at both sides of the DBR, first lenses disposed between the DBR and the first waveguides, and second lenses disposed between the DBR and the second waveguides.

Abstract translation: 提供了一种光子器件。 光子器件包括分布布拉格反射器（DBR），布置在DBR的两侧的第一和第二波导，设置在DBR和第一波导之间的第一透镜以及设置在DBR和第二波导之间的第二透镜。

公开(公告)号：US20130156369A1

公开(公告)日：2013-06-20

申请号：US13535746

申请日：2012-06-28

Applicant: Sahnggi Park ,  Kap-Joong Kim ,  In Gyoo Kim ,  Gyungock Kim

Inventor： Sahnggi Park ,  Kap-Joong Kim ,  In Gyoo Kim ,  Gyungock Kim

IPC: G02B6/12

CPC classification number: G02B6/12007 ,  G02B2006/12061

Abstract: Provided is a ring resonator including first and second waveguides disposed spaced apart from each other, on a substrate, and at least one channel including at least one ring waveguide arranged in a row between the first and second waveguides. The first and second waveguides and the ring waveguide may be formed of silicon, a width of the ring waveguide may range from 0.7 μm to 1.5 μm, a height of the ring waveguide may range from 150 nm to 300 nm, and a space between the first and second waveguides and the ring waveguide most adjacent thereto may range from 250 nm to 1 mm.

Abstract translation: 提供了一种环形谐振器，包括彼此间隔开地布置在衬底上的第一和第二波导，以及包括在第一和第二波导之间布置成一行的至少一个环形波导的至少一个通道。 第一和第二波导和环形波导可以由硅形成，环形波导的宽度可以在0.7μm到1.5μm的范围内，环形波导的高度可以在150nm到300nm的范围内， 第一和第二波导以及与其最相邻的环形波导可以在250nm至1mm的范围内。

公开(公告)号：US20100130010A1

公开(公告)日：2010-05-27

申请号：US12538080

申请日：2009-08-07

Applicant: Sahnggi PARK ,  Kap-Joong Kim ,  In-Gyoo Kim ,  Gyungock Kim

Inventor： Sahnggi PARK ,  Kap-Joong Kim ,  In-Gyoo Kim ,  Gyungock Kim

IPC: H01L21/308 ,  G01B11/27

CPC classification number: H01L21/0338 ,  G01B11/27 ,  G03F9/7069 ,  G03F9/7088 ,  H01L21/0337

Abstract: Provided are a method of fabricating a semiconductor device unconstrained by optical limit and an apparatus of fabricating the semiconductor device. The method includes: forming an etch target layer on a substrate; forming a hard mask layer on the etch target layer; forming first mask patterns on the hard mask layer; forming first spacers on sidewalls of the first mask patterns; forming hard mask patterns having an opening by using the first mask patterns and the first spacers as a mask to etch the hard mask layer; aligning second mask patterns on the hard mask patterns to fill the opening; forming second spacers on sidewalls of the second mask patterns; forming fine mask patterns by using the second mask patterns and the second spacers as a mask to etch the hard mask patterns; and forming fine patterns by using the fine mask patterns as a mask to etch the etch target layer.

Abstract translation: 提供一种制造不受光学极限约束的半导体器件的方法和制造半导体器件的装置。 该方法包括：在衬底上形成蚀刻目标层; 在蚀刻靶层上形成硬掩模层; 在硬掩模层上形成第一掩模图案; 在所述第一掩模图案的侧壁上形成第一间隔物; 通过使用第一掩模图案和第一间隔物作为掩模形成具有开口的硬掩模图案以蚀刻硬掩模层; 对准硬掩模图案上的第二掩模图案以填充开口; 在所述第二掩模图案的侧壁上形成第二间隔物; 通过使用第二掩模图案和第二间隔物作为掩模来形成精细的掩模图案以蚀刻硬掩模图案; 并通过使用精细掩模图案作为掩模来形成精细图案以蚀刻蚀刻目标层。

公开(公告)号：US08644657B2

公开(公告)日：2014-02-04

申请号：US13175567

申请日：2011-07-01

Applicant: Sahnggi Park ,  Gyungock Kim

Inventor： Sahnggi Park ,  Gyungock Kim

IPC: G02B6/26 ,  G02B6/42

CPC classification number: H01P7/088 ,  G02F1/0147 ,  G02F1/3132 ,  H01P1/2135

Abstract: Provided is a method of tuning a resonance wavelength of a ring resonator. The method of tuning the resonance wavelength of a ring resonator includes preparing a ring resonator which contains a ring waveguide and a dielectric layer covering the ring waveguide, and heating the ring resonator to induce a refractive index phase change of the dielectric layer.

Abstract translation: 提供了调谐环形谐振器的谐振波长的方法。 调谐环形谐振器的谐振波长的方法包括制备环形谐振器，该环形谐振器包含环形波导和覆盖环形波导的电介质层，并且加热环形谐振器以引起电介质层的折射率相位变化。

公开(公告)号：US07760974B2

公开(公告)日：2010-07-20

申请号：US11828418

申请日：2007-07-26

Applicant: Jong Moo Lee ,  Duk Jun Kim ,  Junghyung Pyo ,  Gyungock Kim

Inventor： Jong Moo Lee ,  Duk Jun Kim ,  Junghyung Pyo ,  Gyungock Kim

IPC: G02B6/34

CPC classification number: G02B6/12028 ,  G02B6/12011

Abstract: Provided is a silicon array waveguide grating (AWG) device comprising a silicon array waveguide in which a plurality of optical waveguides formed of a lower cladding layer, a silicon core, and an upper cladding layer are arranged, wherein the variation of the refractive index of the silicon core is positive, and the upper cladding layer is formed of polymer, the variation of refractive index of which according to temperature is negative, which is opposite to the silicon core, and the cross-section of the silicon core varies between different areas to adjust the variation of the effective refractive index of the optical waveguide according to temperature.

Abstract translation: 提供了一种硅阵列波导光栅（AWG）器件，其包括硅阵列波导，其中布置由下包层，硅芯和上包层形成的多个光波导，其中折射率的变化 硅芯是正的，并且上包层由聚合物形成，其折射率随着温度的变化是负的，其与硅芯相反，并且硅芯的横截面在不同的区域之间变化 以根据温度调节光波导的有效折射率的变化。

公开(公告)号：US07630602B2

公开(公告)日：2009-12-08

申请号：US11856498

申请日：2007-09-17

Applicant: Duk Jun Kim ,  Jong Moo Lee ,  Junghyung Pyo ,  Gyungock Kim

Inventor： Duk Jun Kim ,  Jong Moo Lee ,  Junghyung Pyo ,  Gyungock Kim

IPC: G02B6/34 ,  G02B6/10

CPC classification number: G02B6/12028 ,  G02B6/12011

Abstract: An optical filter module for wavelength multiplexing and demultiplexing and a method of manufacturing the same are provided. The optical filter module for wavelength multiplexing and demultiplexing includes: at least one or more input waveguides; an input-stage star coupler in the form of a slab waveguide connected to the input waveguides; array waveguide which is connected to the input-stage star coupler and in which a plurality of individual waveguides, each of which has an optical path having a predetermined length different to those of the other waveguides and has a heterogeneous waveguide interval formed of a material having a different refraction index from that of a core of the waveguides, are sequentially arranged; an output-stage star coupler in the form of a slab waveguide connected to the array waveguides; and at least one or more output waveguides connected to the output-stage star coupler. According to the optical filter module and the method of manufacturing the same, heterogeneous waveguide intervals having core materials different from those of conventional waveguides are introduced in predetermined areas of array waveguides, thereby reducing polarized light and temperature dependency and at the same time effectively removing optical coupling loss, which can occur at both ends of a heterogeneous waveguide interval, without an additional process of forming waveguides.

Abstract translation: 提供了一种用于波分复用和解复用的滤光器模块及其制造方法。 用于波长复用和解复用的滤光器模块包括：至少一个或多个输入波导; 输入级星形耦合器，其形式为连接到输入波导的平板波导; 阵列波导，其连接到输入级星形耦合器，并且其中多个单独的波导具有与其它波导的预定长度不同的预定长度的光路，并且具有由具有 依次布置与波导的芯的折射率不同的折射率; 输出级星形耦合器，其形式为连接到阵列波导的平板波导; 以及连接到输出级星形耦合器的至少一个或多个输出波导。 根据光滤波器模块及其制造方法，在阵列波导的预定区域中引入具有与常规波导不同的芯材料的异质波导间隔，从而降低偏振光和温度依赖性，同时有效地去除光 耦合损耗，其可以发生在异质波导间隔的两端，而没有形成波导的附加工艺。

公开(公告)号：US20110135252A1

公开(公告)日：2011-06-09

申请号：US12816323

申请日：2010-06-15

Applicant: Do Won KIM ,  Gyungock Kim ,  Junghyung Pyo ,  Duk Jun Kim ,  In Gyoo Kim

Inventor： Do Won KIM ,  Gyungock Kim ,  Junghyung Pyo ,  Duk Jun Kim ,  In Gyoo Kim

IPC: G02B6/30 ,  G02B6/10

CPC classification number: G02B6/43 ,  G02B6/262 ,  G02B6/4292

Abstract: Provided is a silicon photonics chip that is thermally separated from a light emitting device. The silicon photonics chip includes photoelectric devices integrated on a silicon substrate. The photoelectric devices include an optical connection device optically guiding at least one signal light incident from a signal light generation device to transmit the signal light into the silicon substrate. The signal light generation device is thermally separated from the photoelectric devices, and is optically connected to the photoelectric devices.

Abstract translation: 提供了与发光器件热分离的硅光子芯片。 硅光子芯片包括集成在硅衬底上的光电器件。 光电装置包括光学连接装置，其光引导从信号光产生装置入射的至少一个信号光，以将信号光传输到硅衬底。 信号光产生装置与光电装置热分离，并与光电装置光学连接。