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    PHOTONICS DEVICE
    1.
    发明申请
    PHOTONICS DEVICE 审中-公开
    光电设备

    公开(公告)号：US20100110546A1

    公开(公告)日：2010-05-06

    申请号：US12541710

    申请日：2009-08-14

    Applicant: Sahnggi PARK ,  Kap-Joong Kim ,  In-Gyoo Kim ,  Gyungock Kim

    Inventor： Sahnggi PARK ,  Kap-Joong Kim ,  In-Gyoo Kim ,  Gyungock Kim

    IPC: G02B5/18

    CPC classification number: G02B6/305 ,  G02B6/264 ,  G02B6/32

    Abstract: Provided is a photonics device. The photonics device includes a distribution Bragg reflector (DBR), first and second waveguides disposed at both sides of the DBR, first lenses disposed between the DBR and the first waveguides, and second lenses disposed between the DBR and the second waveguides.

    Abstract translation: 提供了一种光子器件。 光子器件包括分布布拉格反射器（DBR），布置在DBR的两侧的第一和第二波导，设置在DBR和第一波导之间的第一透镜以及设置在DBR和第二波导之间的第二透镜。

    RING RESONATORS HAVING Si AND/OR SiN WAVEGUIDES
    3.
    发明申请
    RING RESONATORS HAVING Si AND/OR SiN WAVEGUIDES 审中-公开
    具有Si和/或SiN波长的环形谐振器

    公开(公告)号：US20130156369A1

    公开(公告)日：2013-06-20

    申请号：US13535746

    申请日：2012-06-28

    Applicant: Sahnggi Park ,  Kap-Joong Kim ,  In Gyoo Kim ,  Gyungock Kim

    Inventor： Sahnggi Park ,  Kap-Joong Kim ,  In Gyoo Kim ,  Gyungock Kim

    IPC: G02B6/12

    CPC classification number: G02B6/12007 ,  G02B2006/12061

    Abstract: Provided is a ring resonator including first and second waveguides disposed spaced apart from each other, on a substrate, and at least one channel including at least one ring waveguide arranged in a row between the first and second waveguides. The first and second waveguides and the ring waveguide may be formed of silicon, a width of the ring waveguide may range from 0.7 μm to 1.5 μm, a height of the ring waveguide may range from 150 nm to 300 nm, and a space between the first and second waveguides and the ring waveguide most adjacent thereto may range from 250 nm to 1 mm.

    Abstract translation: 提供了一种环形谐振器，包括彼此间隔开地布置在衬底上的第一和第二波导，以及包括在第一和第二波导之间布置成一行的至少一个环形波导的至少一个通道。 第一和第二波导和环形波导可以由硅形成，环形波导的宽度可以在0.7μm到1.5μm的范围内，环形波导的高度可以在150nm到300nm的范围内， 第一和第二波导以及与其最相邻的环形波导可以在250nm至1mm的范围内。

    METHOD OF FABRICATING SEMICONDUCTOR DEVICE UNCONSTRAINED BY OPTICAL LIMIT AND APPARATUS OF FABRICATING THE SEMICONDUCTOR DEVICE
    4.
    发明申请
    METHOD OF FABRICATING SEMICONDUCTOR DEVICE UNCONSTRAINED BY OPTICAL LIMIT AND APPARATUS OF FABRICATING THE SEMICONDUCTOR DEVICE 审中-公开
    制造光限制半导体器件的方法和制造半导体器件的设备

    公开(公告)号：US20100130010A1

    公开(公告)日：2010-05-27

    申请号：US12538080

    申请日：2009-08-07

    Applicant: Sahnggi PARK ,  Kap-Joong Kim ,  In-Gyoo Kim ,  Gyungock Kim

    Inventor： Sahnggi PARK ,  Kap-Joong Kim ,  In-Gyoo Kim ,  Gyungock Kim

    IPC: H01L21/308 ,  G01B11/27

    CPC classification number: H01L21/0338 ,  G01B11/27 ,  G03F9/7069 ,  G03F9/7088 ,  H01L21/0337

    Abstract: Provided are a method of fabricating a semiconductor device unconstrained by optical limit and an apparatus of fabricating the semiconductor device. The method includes: forming an etch target layer on a substrate; forming a hard mask layer on the etch target layer; forming first mask patterns on the hard mask layer; forming first spacers on sidewalls of the first mask patterns; forming hard mask patterns having an opening by using the first mask patterns and the first spacers as a mask to etch the hard mask layer; aligning second mask patterns on the hard mask patterns to fill the opening; forming second spacers on sidewalls of the second mask patterns; forming fine mask patterns by using the second mask patterns and the second spacers as a mask to etch the hard mask patterns; and forming fine patterns by using the fine mask patterns as a mask to etch the etch target layer.

    Abstract translation: 提供一种制造不受光学极限约束的半导体器件的方法和制造半导体器件的装置。 该方法包括：在衬底上形成蚀刻目标层; 在蚀刻靶层上形成硬掩模层; 在硬掩模层上形成第一掩模图案; 在所述第一掩模图案的侧壁上形成第一间隔物; 通过使用第一掩模图案和第一间隔物作为掩模形成具有开口的硬掩模图案以蚀刻硬掩模层; 对准硬掩模图案上的第二掩模图案以填充开口; 在所述第二掩模图案的侧壁上形成第二间隔物; 通过使用第二掩模图案和第二间隔物作为掩模来形成精细的掩模图案以蚀刻硬掩模图案; 并通过使用精细掩模图案作为掩模来形成精细图案以蚀刻蚀刻目标层。

    METHOD OF FORMING WAVEGUIDE FACET AND PHOTONICS DEVICE USING THE METHOD
    5.
    发明申请
    METHOD OF FORMING WAVEGUIDE FACET AND PHOTONICS DEVICE USING THE METHOD 审中-公开
    使用该方法形成波长面和光子器件的方法

    公开(公告)号：US20110135265A1

    公开(公告)日：2011-06-09

    申请号：US12842287

    申请日：2010-07-23

    Applicant: Sahnggi PARK ,  Kap-Joong Kim ,  Gyungock Kim

    Inventor： Sahnggi PARK ,  Kap-Joong Kim ,  Gyungock Kim

    IPC: G02B6/10 ,  C23F1/00

    CPC classification number: G02B6/13

    Abstract: Provided are a method of forming a waveguide facet and a photonics device using the method. The method includes forming at least one optical device die including waveguides on a substrate, forming at least one trench in a lower surface of the substrate, and cleaving the substrate to form facets of the waveguides over the trench. The trench is formed along a direction crossing the waveguides under the waveguides.

    Abstract translation: 提供了使用该方法形成波导面和光子器件的方法。 所述方法包括在衬底上形成至少一个包括波导的光学器件裸片，在衬底的下表面中形成至少一个沟槽，并且切割衬底以在沟槽上形成波导的刻面。 沿着与波导下方的波导交叉的方向形成沟槽。

    OPTICAL DEVICE AND METHOD OF FABRICATING THE SAME
    6.
    发明申请
    OPTICAL DEVICE AND METHOD OF FABRICATING THE SAME 审中-公开
    光学装置及其制造方法

    公开(公告)号：US20100303435A1

    公开(公告)日：2010-12-02

    申请号：US12555767

    申请日：2009-09-08

    Applicant: Sahnggi Park ,  Kap-Joong Kim ,  Duk Jun Kim ,  Gyungock Kim

    Inventor： Sahnggi Park ,  Kap-Joong Kim ,  Duk Jun Kim ,  Gyungock Kim

    IPC: G02B6/00 ,  G03F7/20

    CPC classification number: G02B6/12007

    Abstract: Provided are an optical device and a method of fabricating the same. The optical device includes: a substrate; and a ring resonator on the substrate. The ring resonator includes: a cladding layer including a lower cladding layer and an upper cladding layer on the substrate; a core including a plurality of rings between the lower cladding layer and the upper cladding layer; and an embeded layer interposed between the core and the cladding layer and having a refractive index less than that of the core and more than that of the cladding layer.

    Abstract translation: 提供了一种光学器件及其制造方法。 光学装置包括：基板; 和在基板上的环形谐振器。 环形谐振器包括：在基板上包括下包层和上包层的包层; 芯包括在下包层和上包层之间的多个环; 以及插入在芯和包覆层之间并且折射率小于芯的折射率并且大于包覆层的折射率的嵌入层。

    LIGHT DETECTION DEVICES AND METHODS OF MANUFACTURING THE SAME
    9.
    发明申请
    LIGHT DETECTION DEVICES AND METHODS OF MANUFACTURING THE SAME 有权
    光检测装置及其制造方法

    公开(公告)号：US20120126357A1

    公开(公告)日：2012-05-24

    申请号：US13284818

    申请日：2011-10-28

    Applicant: Sang Hoon KIM ,  Gyungock Kim ,  In Gyoo Kim ,  JiHo Joo ,  Ki Seok Jang

    Inventor： Sang Hoon KIM ,  Gyungock Kim ,  In Gyoo Kim ,  JiHo Joo ,  Ki Seok Jang

    IPC: H01L31/102 ,  H01L31/18

    CPC classification number: H01L31/102 ,  H01L31/18

    Abstract: Provided are light detection devices and methods of manufacturing the same. The light detection device includes a first conductive pattern on a surface of a substrate, an insulating pattern on the substrate and having an opening exposing at least a portion of the first conductive pattern, a light absorbing layer filling the opening of the insulating pattern and having a top surface disposed at a level substantially higher than a top surface of the insulating pattern, a second conductive pattern on the light absorbing layer, and connecting terminals electrically connected to the first and second conductive patterns, respectively.

    Abstract translation: 提供了光检测装置及其制造方法。 光检测装置包括在基板的表面上的第一导电图案，在基板上的绝缘图案，并且具有露出第一导电图案的至少一部分的开口，填充绝缘图案的开口的光吸收层，并且具有 设置在基本上高于绝缘图案的顶表面的高度的顶表面，在光吸收层上的第二导电图案，以及分别电连接到第一和第二导电图案的连接端子。

    Semiconductor devices and methods of forming the same
    10.
    发明授权
    Semiconductor devices and methods of forming the same 有权
    半导体器件及其形成方法

    公开(公告)号：US08288185B2

    公开(公告)日：2012-10-16

    申请号：US12788542

    申请日：2010-05-27

    Applicant: In Gyoo Kim ,  Dae Seo Park ,  Jun Taek Hong ,  Gyungock Kim

    Inventor： In Gyoo Kim ,  Dae Seo Park ,  Jun Taek Hong ,  Gyungock Kim

    IPC: H01L21/00

    CPC classification number: H01L21/7624 ,  H01L21/76243 ,  H01L21/76264 ,  H01L29/0657

    Abstract: Provided are a semiconductor device and a method of forming the same. According to the method, a first buried oxide layer is locally formed in a semiconductor substrate and a core semiconductor pattern of a line form, a pair of anchor-semiconductor patterns and a support-semiconductor pattern are formed by patterning a semiconductor layer on the first buried oxide layer to expose the first buried oxide layer. The pair of anchor-semiconductor patterns contact both ends of the core semiconductor pattern, respectively, and the support-semiconductor pattern contacts one sidewall of the core semiconductor pattern, the first buried oxide layer below the core semiconductor pattern is removed. At this time, a portion of the first buried oxide layer below each of the anchor-semiconductor patterns and a portion of the first buried oxide layer below the support-semiconductor pattern remain. A second buried oxide layer is formed to fill a region where the first buried oxide layer below the core semiconductor pattern.

    Abstract translation: 提供半导体器件及其形成方法。 根据该方法，在半导体衬底中局部地形成第一掩埋氧化物层，并且通过在第一衬底上图案化半导体层来形成线形式的芯半导体图案，一对锚半导体图案和支撑半导体图案 埋入氧化物层以暴露第一掩埋氧化物层。 一对锚半导体图案分别接触芯半导体图案的两端，并且支撑半导体图案接触芯半导体图案的一个侧壁，去除芯半导体图案下方的第一掩埋氧化物层。 此时，保留在半导体图案的每一个下面的第一掩埋氧化物层的一部分和位于载体半导体图案之下的第一掩埋氧化物层的一部分。 形成第二掩埋氧化物层以填充在芯半导体图案之下的第一掩埋氧化物层的区域。

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