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    RING RESONATORS HAVING Si AND/OR SiN WAVEGUIDES
    3.
    发明申请
    RING RESONATORS HAVING Si AND/OR SiN WAVEGUIDES 审中-公开
    具有Si和/或SiN波长的环形谐振器

    公开(公告)号：US20130156369A1

    公开(公告)日：2013-06-20

    申请号：US13535746

    申请日：2012-06-28

    Applicant: Sahnggi Park ,  Kap-Joong Kim ,  In Gyoo Kim ,  Gyungock Kim

    Inventor： Sahnggi Park ,  Kap-Joong Kim ,  In Gyoo Kim ,  Gyungock Kim

    IPC: G02B6/12

    CPC classification number: G02B6/12007 ,  G02B2006/12061

    Abstract: Provided is a ring resonator including first and second waveguides disposed spaced apart from each other, on a substrate, and at least one channel including at least one ring waveguide arranged in a row between the first and second waveguides. The first and second waveguides and the ring waveguide may be formed of silicon, a width of the ring waveguide may range from 0.7 μm to 1.5 μm, a height of the ring waveguide may range from 150 nm to 300 nm, and a space between the first and second waveguides and the ring waveguide most adjacent thereto may range from 250 nm to 1 mm.

    Abstract translation: 提供了一种环形谐振器，包括彼此间隔开地布置在衬底上的第一和第二波导，以及包括在第一和第二波导之间布置成一行的至少一个环形波导的至少一个通道。 第一和第二波导和环形波导可以由硅形成，环形波导的宽度可以在0.7μm到1.5μm的范围内，环形波导的高度可以在150nm到300nm的范围内， 第一和第二波导以及与其最相邻的环形波导可以在250nm至1mm的范围内。

    LIGHT DETECTION DEVICES AND METHODS OF MANUFACTURING THE SAME
    6.
    发明申请
    LIGHT DETECTION DEVICES AND METHODS OF MANUFACTURING THE SAME 有权
    光检测装置及其制造方法

    公开(公告)号：US20120126357A1

    公开(公告)日：2012-05-24

    申请号：US13284818

    申请日：2011-10-28

    Applicant: Sang Hoon KIM ,  Gyungock Kim ,  In Gyoo Kim ,  JiHo Joo ,  Ki Seok Jang

    Inventor： Sang Hoon KIM ,  Gyungock Kim ,  In Gyoo Kim ,  JiHo Joo ,  Ki Seok Jang

    IPC: H01L31/102 ,  H01L31/18

    CPC classification number: H01L31/102 ,  H01L31/18

    Abstract: Provided are light detection devices and methods of manufacturing the same. The light detection device includes a first conductive pattern on a surface of a substrate, an insulating pattern on the substrate and having an opening exposing at least a portion of the first conductive pattern, a light absorbing layer filling the opening of the insulating pattern and having a top surface disposed at a level substantially higher than a top surface of the insulating pattern, a second conductive pattern on the light absorbing layer, and connecting terminals electrically connected to the first and second conductive patterns, respectively.

    Abstract translation: 提供了光检测装置及其制造方法。 光检测装置包括在基板的表面上的第一导电图案，在基板上的绝缘图案，并且具有露出第一导电图案的至少一部分的开口，填充绝缘图案的开口的光吸收层，并且具有 设置在基本上高于绝缘图案的顶表面的高度的顶表面，在光吸收层上的第二导电图案，以及分别电连接到第一和第二导电图案的连接端子。

    Semiconductor devices and methods of forming the same
    7.
    发明授权
    Semiconductor devices and methods of forming the same 有权
    半导体器件及其形成方法

    公开(公告)号：US08288185B2

    公开(公告)日：2012-10-16

    申请号：US12788542

    申请日：2010-05-27

    Applicant: In Gyoo Kim ,  Dae Seo Park ,  Jun Taek Hong ,  Gyungock Kim

    Inventor： In Gyoo Kim ,  Dae Seo Park ,  Jun Taek Hong ,  Gyungock Kim

    IPC: H01L21/00

    CPC classification number: H01L21/7624 ,  H01L21/76243 ,  H01L21/76264 ,  H01L29/0657

    Abstract: Provided are a semiconductor device and a method of forming the same. According to the method, a first buried oxide layer is locally formed in a semiconductor substrate and a core semiconductor pattern of a line form, a pair of anchor-semiconductor patterns and a support-semiconductor pattern are formed by patterning a semiconductor layer on the first buried oxide layer to expose the first buried oxide layer. The pair of anchor-semiconductor patterns contact both ends of the core semiconductor pattern, respectively, and the support-semiconductor pattern contacts one sidewall of the core semiconductor pattern, the first buried oxide layer below the core semiconductor pattern is removed. At this time, a portion of the first buried oxide layer below each of the anchor-semiconductor patterns and a portion of the first buried oxide layer below the support-semiconductor pattern remain. A second buried oxide layer is formed to fill a region where the first buried oxide layer below the core semiconductor pattern.

    Abstract translation: 提供半导体器件及其形成方法。 根据该方法，在半导体衬底中局部地形成第一掩埋氧化物层，并且通过在第一衬底上图案化半导体层来形成线形式的芯半导体图案，一对锚半导体图案和支撑半导体图案 埋入氧化物层以暴露第一掩埋氧化物层。 一对锚半导体图案分别接触芯半导体图案的两端，并且支撑半导体图案接触芯半导体图案的一个侧壁，去除芯半导体图案下方的第一掩埋氧化物层。 此时，保留在半导体图案的每一个下面的第一掩埋氧化物层的一部分和位于载体半导体图案之下的第一掩埋氧化物层的一部分。 形成第二掩埋氧化物层以填充在芯半导体图案之下的第一掩埋氧化物层的区域。

    SILICON PHOTONICS CHIP
    8.
    发明申请
    SILICON PHOTONICS CHIP 审中-公开
    硅胶片

    公开(公告)号：US20110135252A1

    公开(公告)日：2011-06-09

    申请号：US12816323

    申请日：2010-06-15

    Applicant: Do Won KIM ,  Gyungock Kim ,  Junghyung Pyo ,  Duk Jun Kim ,  In Gyoo Kim

    Inventor： Do Won KIM ,  Gyungock Kim ,  Junghyung Pyo ,  Duk Jun Kim ,  In Gyoo Kim

    IPC: G02B6/30 ,  G02B6/10

    CPC classification number: G02B6/43 ,  G02B6/262 ,  G02B6/4292

    Abstract: Provided is a silicon photonics chip that is thermally separated from a light emitting device. The silicon photonics chip includes photoelectric devices integrated on a silicon substrate. The photoelectric devices include an optical connection device optically guiding at least one signal light incident from a signal light generation device to transmit the signal light into the silicon substrate. The signal light generation device is thermally separated from the photoelectric devices, and is optically connected to the photoelectric devices.

    Abstract translation: 提供了与发光器件热分离的硅光子芯片。 硅光子芯片包括集成在硅衬底上的光电器件。 光电装置包括光学连接装置，其光引导从信号光产生装置入射的至少一个信号光，以将信号光传输到硅衬底。 信号光产生装置与光电装置热分离，并与光电装置光学连接。

    PHOTO DETECTOR AND METHOD OF MANUFACTURING THE SAME
    10.
    发明申请
    PHOTO DETECTOR AND METHOD OF MANUFACTURING THE SAME 审中-公开
    相片检测器及其制造方法

    公开(公告)号：US20110133187A1

    公开(公告)日：2011-06-09

    申请号：US12765705

    申请日：2010-04-22

    Applicant: Sang Hoon KIM ,  Gyungock Kim ,  In Gyoo Kim ,  Dongwoo Suh ,  Jiho Joo ,  Ki Seok Jang

    Inventor： Sang Hoon KIM ,  Gyungock Kim ,  In Gyoo Kim ,  Dongwoo Suh ,  Jiho Joo ,  Ki Seok Jang

    IPC: H01L31/0256 ,  H01L31/18 ,  H01L31/0232

    CPC classification number: G02B6/12004 ,  G02B2006/12176 ,  G02B2006/12188 ,  H01L31/105 ,  H01L31/1804 ,  H01L31/1812 ,  Y02E10/547 ,  Y02P70/521

    Abstract: Provided is a manufacturing method of a photo detector. The method includes: forming a first single crystal semiconductor layer and an optical waveguide protruding from the first single crystal semiconductor layer; forming an insulation layer on the first single crystal semiconductor layer to cover the optical waveguide; forming an opening by etching the insulation layer to expose the top surface of the optical waveguide; forming a second single crystal semiconductor layer from the top surface of the exposed optical waveguide, in the opening; and selectively forming a poly semiconductor layer from the top surface of the second single crystal semiconductor layer, the poly semiconductor layer being doped with dopants.

    Abstract translation: 提供了一种光电检测器的制造方法。 该方法包括：形成从第一单晶半导体层突出的第一单晶半导体层和光波​​导; 在所述第一单晶半导体层上形成绝缘层以覆盖所述光波导; 通过蚀刻绝缘层来形成开口以暴露光波导的顶表面; 在所述开口中从所述暴露的光波导的顶表面形成第二单晶半导体层; 以及从所述第二单晶半导体层的顶表面选择性地形成多晶半导体层，所述多晶半导体层掺杂有掺杂剂。

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