公开(公告)号：US20070262297A1

公开(公告)日：2007-11-15

申请号：US11432760

申请日：2006-05-10

申请人： Salvatore Leonardi ,  Claudia Caligiore ,  Guglielmo Fortunato ,  Luigi Mariucci ,  Stefano Cipolloni ,  Francesco Angelis

发明人： Salvatore Leonardi ,  Claudia Caligiore ,  Guglielmo Fortunato ,  Luigi Mariucci ,  Stefano Cipolloni ,  Francesco Angelis

IPC分类号： H01L29/08 ,  H01L35/24 ,  H01L51/00

CPC分类号： H01L51/0545 ,  H01L51/004 ,  H01L51/0533 ,  H01L51/105

摘要： An organic thin-film transistor device integrated on a substrate and comprising at least an organic active layer and metallic contact regions realized on an insulating layer. Advantageously the organic thin-film transistor device further comprises a thin buffer layer of polymethylmetacrylate or PMMA realized between the metallic contact regions and the organic active layer. A process for manufacturing an organic thin-film transistor device is also described.

摘要翻译： 一种集成在基板上并且至少包括在绝缘层上实现的有机活性层和金属接触区域的有机薄膜晶体管器件。 有利地，有机薄膜晶体管器件还包括在金属接触区域和有机活性层之间实现的聚甲基丙烯酸甲酯或PMMA的缓冲缓冲层。 还描述了制造有机薄膜晶体管器件的工艺。

公开(公告)号：US07674694B2

公开(公告)日：2010-03-09

申请号：US12031456

申请日：2008-02-14

申请人： Salvatore Leonardi ,  Salvatore Coffa ,  Claudia Caligiore ,  Guglielmo Fortunato ,  Luigi Mariucci ,  Massimo Cuscuna

发明人： Salvatore Leonardi ,  Salvatore Coffa ,  Claudia Caligiore ,  Guglielmo Fortunato ,  Luigi Mariucci ,  Massimo Cuscuna

IPC分类号： H01L21/20 ,  H01L21/36

CPC分类号： H01L29/78621 ,  H01L29/66757

摘要： A process for realizing TFT devices on a substrate comprises the steps of: forming on the substrate, in cascade, an amorphous silicon layer and a heavily doped amorphous silicon layer, forming a photolithographic mask on the heavily doped amorphous silicon layer provided with an opening, removing the heavily doped amorphous silicon layer through the opening for realizing opposite portions of the heavily doped amorphous silicon layer whose cross dimensions decrease as long as they depart from the amorphous silicon layer, removing the photolithographic mask, carrying out a diffusion and activation step of the dopant contained in the portions of the heavily doped amorphous silicon layer inside the amorphous silicon layer, for realizing source/drain regions of said TFT device.

摘要翻译： 用于在衬底上实现TFT器件的工艺包括以下步骤：级联地形成非晶硅层和重掺杂非晶硅层，在设置有开口的重掺杂非晶硅层上形成光刻掩模， 通过开口去除重掺杂的非晶硅层，用于实现重掺杂非晶硅层的相对部分，其横截面尺寸随着离开非晶硅层而减小，除去光刻掩模，进行扩散和激活步骤 包含在非晶硅层内部的重掺杂非晶硅层的部分中的掺杂物，用于实现所述TFT器件的源极/漏极区域。

公开(公告)号：US20080213961A1

公开(公告)日：2008-09-04

申请号：US12031456

申请日：2008-02-14

申请人： Salvatore Leonardi ,  Salvatore Coffa ,  Claudia Caligiore ,  Guglielmo Fortunato ,  Luigi Mariucci ,  Massimo Cuscuna

发明人： Salvatore Leonardi ,  Salvatore Coffa ,  Claudia Caligiore ,  Guglielmo Fortunato ,  Luigi Mariucci ,  Massimo Cuscuna

IPC分类号： H01L21/336 ,  H01L21/20

CPC分类号： H01L29/78621 ,  H01L29/66757

摘要： Process for realizing TFT devices on a substrate which comprises the steps of: forming on the substrate, in cascade, an amorphous silicon layer and a heavily doped amorphous silicon layer, forming a photolithographic mask on the heavily doped amorphous silicon layer provided with an opening, removing the heavily doped amorphous silicon layer through the opening for realizing opposite portions of the heavily doped amorphous silicon layer whose cross dimensions decrease as long as they depart from the amorphous silicon layer, removing the photolithographic mask, carrying out a diffusion and activation step of the dopant contained in the portions of the heavily doped amorphous silicon layer inside the amorphous silicon layer, for realizing source/drain regions of said TFT device.

摘要翻译： 一种用于在衬底上实现TFT器件的方法，包括以下步骤：级联地形成非晶硅层和重掺杂非晶硅层，在设置有开口的重掺杂非晶硅层上形成光刻掩模， 通过开口去除重掺杂的非晶硅层，用于实现重掺杂非晶硅层的相对部分，其横截面尺寸随着离开非晶硅层而减小，除去光刻掩模，进行扩散和激活步骤 包含在非晶硅层内部的重掺杂非晶硅层的部分中的掺杂物，用于实现所述TFT器件的源极/漏极区域。

公开(公告)号：US20070161217A1

公开(公告)日：2007-07-12

申请号：US11604189

申请日：2006-11-22

申请人： Dario Salinas ,  Guglielmo Fortunato ,  Angelo Magri ,  Luigi Mariucci ,  Massimo Cuscuna' ,  Cateno Camalleri

发明人： Dario Salinas ,  Guglielmo Fortunato ,  Angelo Magri ,  Luigi Mariucci ,  Massimo Cuscuna' ,  Cateno Camalleri

IPC分类号： H01L21/425

CPC分类号： H01L29/7802 ,  H01L21/268 ,  H01L21/28044 ,  H01L21/2815 ,  H01L21/28247 ,  H01L29/42368 ,  H01L29/42376 ,  H01L29/513 ,  H01L29/66712 ,  H01S5/0261

摘要： A process for manufacturing a MOS device and the MOS device manufactured thereby are disclosed. The process includes in a semiconductor layer forming a gate structure above the semiconductor layer; forming a first doped region within a first surface portion of the semiconductor layer; and irradiating the first doped region with electromagnetic radiation, to carry out annealing thereof. Prior to the irradiating step, a dielectric mirror is formed above a second surface portion of the semiconductor layer. The dielectric mirror, which may be of the Bragg-reflector type, reflects at least in part the electromagnetic radiation, and protects underlying regions from the electromagnetic radiation.

摘要翻译： 公开了一种用于制造MOS器件的工艺和由此制造的MOS器件。 该方法包括在半导体层上形成栅极结构的半导体层; 在所述半导体层的第一表面部分内形成第一掺杂区域; 并用电磁辐射照射第一掺杂区，进行退火。 在照射步骤之前，在半导体层的第二表面部分之上形成电介质镜。 可以是布拉格反射器类型的电介质反射镜至少部分地反射电磁辐射，并且保护下面的区域免受电磁辐射的影响。

公开(公告)号：US08283702B2

公开(公告)日：2012-10-09

申请号：US12794357

申请日：2010-06-04

申请人： Dario Salinas ,  Guglielmo Fortunato ,  Angelo Magri′ ,  Luigi Mariucci ,  Massimo Cuscuna ,  Cateno Marco Camalleri

发明人： Dario Salinas ,  Guglielmo Fortunato ,  Angelo Magri′ ,  Luigi Mariucci ,  Massimo Cuscuna ,  Cateno Marco Camalleri

IPC分类号： H01L29/76

CPC分类号： H01L29/7802 ,  H01L21/268 ,  H01L21/28044 ,  H01L21/2815 ,  H01L21/28247 ,  H01L29/42368 ,  H01L29/42376 ,  H01L29/513 ,  H01L29/66712 ,  H01S5/0261

摘要： A process for manufacturing a MOS device and the MOS device manufactured thereby are disclosed. The process includes in a semiconductor layer forming a gate structure above the semiconductor layer; forming a first doped region within a first surface portion of the semiconductor layer; and irradiating the first doped region with electromagnetic radiation, to carry out annealing thereof. Prior to the irradiating step, a dielectric mirror is formed above a second surface portion of the semiconductor layer. The dielectric mirror, which may be of the Bragg-reflector type, reflects at least in part the electromagnetic radiation, and protects underlying regions from the electromagnetic radiation.

摘要翻译： 公开了一种用于制造MOS器件的工艺和由此制造的MOS器件。 该方法包括在半导体层上形成栅极结构的半导体层; 在所述半导体层的第一表面部分内形成第一掺杂区域; 并用电磁辐射照射第一掺杂区，进行退火。 在照射步骤之前，在半导体层的第二表面部分之上形成电介质镜。 可以是布拉格反射器类型的电介质反射镜至少部分地反映电磁辐射，并且保护下面的区域不受电磁辐射的影响。

公开(公告)号：US08030192B2

公开(公告)日：2011-10-04

申请号：US11604189

申请日：2006-11-22

申请人： Dario Salinas ,  Guglielmo Fortunato ,  Angelo Magri′ ,  Luigi Mariucci ,  Massimo Cuscuna′ ,  Cateno Marco Camalleri

发明人： Dario Salinas ,  Guglielmo Fortunato ,  Angelo Magri′ ,  Luigi Mariucci ,  Massimo Cuscuna′ ,  Cateno Marco Camalleri

IPC分类号： H01L21/26

CPC分类号： H01L29/7802 ,  H01L21/268 ,  H01L21/28044 ,  H01L21/2815 ,  H01L21/28247 ,  H01L29/42368 ,  H01L29/42376 ,  H01L29/513 ,  H01L29/66712 ,  H01S5/0261

摘要： A process for manufacturing a MOS device and the MOS device manufactured thereby are disclosed. The process includes in a semiconductor layer forming a gate structure above the semiconductor layer; forming a first doped region within a first surface portion of the semiconductor layer; and irradiating the first doped region with electromagnetic radiation, to carry out annealing thereof. Prior to the irradiating step, a dielectric mirror is formed above a second surface portion of the semiconductor layer. The dielectric mirror, which may be of the Bragg-reflector type, reflects at least in part the electromagnetic radiation, and protects underlying regions from the electromagnetic radiation.

摘要翻译： 公开了一种用于制造MOS器件的工艺和由此制造的MOS器件。 该方法包括在半导体层上形成栅极结构的半导体层; 在所述半导体层的第一表面部分内形成第一掺杂区域; 并用电磁辐射照射第一掺杂区，进行退火。 在照射步骤之前，在半导体层的第二表面部分之上形成电介质镜。 可以是布拉格反射器类型的电介质反射镜至少部分地反映电磁辐射，并且保护下面的区域不受电磁辐射的影响。

公开(公告)号：US20100237391A1

公开(公告)日：2010-09-23

申请号：US12794357

申请日：2010-06-04

申请人： Dario SALINAS ,  Guglielmo Fortunato ,  Angelo Magri' ,  Luigi Mariucci ,  Massimo Cuscuna ,  Cateno Marco Camalleri

发明人： Dario SALINAS ,  Guglielmo Fortunato ,  Angelo Magri' ,  Luigi Mariucci ,  Massimo Cuscuna ,  Cateno Marco Camalleri

IPC分类号： H01L29/78

CPC分类号： H01L29/7802 ,  H01L21/268 ,  H01L21/28044 ,  H01L21/2815 ,  H01L21/28247 ,  H01L29/42368 ,  H01L29/42376 ,  H01L29/513 ,  H01L29/66712 ,  H01S5/0261

摘要： A process for manufacturing a MOS device and the MOS device manufactured thereby are disclosed. The process includes in a semiconductor layer forming a gate structure above the semiconductor layer; forming a first doped region within a first surface portion of the semiconductor layer; and irradiating the first doped region with electromagnetic radiation, to carry out annealing thereof. Prior to the irradiating step, a dielectric mirror is formed above a second surface portion of the semiconductor layer. The dielectric mirror, which may be of the Bragg-reflector type, reflects at least in part the electromagnetic radiation, and protects underlying regions from the electromagnetic radiation.

摘要翻译： 公开了一种用于制造MOS器件的工艺和由此制造的MOS器件。 该方法包括在半导体层上形成栅极结构的半导体层; 在所述半导体层的第一表面部分内形成第一掺杂区域; 并用电磁辐射照射第一掺杂区，进行退火。 在照射步骤之前，在半导体层的第二表面部分之上形成电介质镜。 可以是布拉格反射器类型的电介质反射镜至少部分地反映电磁辐射，并且保护下面的区域不受电磁辐射的影响。