公开(公告)号：US12238970B2

公开(公告)日：2025-02-25

申请号：US18491418

申请日：2023-10-20

Applicant: Samsung Display Co., LTD.

Inventor： Hae-Yeon Lee ,  Hyun-Chol Bang ,  Su Jin Kim ,  Bong Won Lee

IPC: H01L27/14 ,  G09G3/3233 ,  H10K59/121 ,  H10K59/131 ,  H01L27/12 ,  H01L29/786

Abstract: An emissive display device includes a polycrystalline semiconductor including a channel, source region, and drain region of a driving transistor disposed on a substrate. The device includes a gate electrode of the driving transistor overlapping the channel of the driving transistor, an oxide semiconductor including a channel, a source region, and a drain region of a second transistor disposed on the substrate, and a first connection electrode. The first connection electrode includes a first connector electrically connected to the gate electrode of the driving transistor, a second connector electrically connected to a second electrode of the second transistor, and a main body disposed between the first connector and the second connector. The device includes an initialization voltage line disposed on the substrate and applying an initialization voltage. The initialization voltage line surrounds at least a part of the second connector of the first connection electrode.

公开(公告)号：US11805681B2

公开(公告)日：2023-10-31

申请号：US17192394

申请日：2021-03-04

Applicant: Samsung Display Co., LTD.

Inventor： Hae-Yeon Lee ,  Hyun-Chol Bang ,  Su Jin Kim ,  Bong Won Lee

IPC: H01L27/14 ,  H10K59/121 ,  G09G3/3233 ,  H10K59/131 ,  H01L29/786 ,  H01L27/12

CPC classification number: H10K59/1213 ,  G09G3/3233 ,  H10K59/1216 ,  H10K59/131 ,  G09G2300/0819 ,  G09G2300/0852 ,  G09G2300/0861 ,  G09G2320/0209 ,  G09G2320/0219 ,  H01L27/124 ,  H01L27/1225 ,  H01L27/1251 ,  H01L27/1255 ,  H01L29/7869 ,  H01L29/78675

Abstract: An emissive display device includes a polycrystalline semiconductor including a channel, source region, and drain region of a driving transistor disposed on a substrate. The device includes a gate electrode of the driving transistor overlapping the channel of the driving transistor, an oxide semiconductor including a channel, a source region, and a drain region of a second transistor disposed on the substrate, and a first connection electrode. The first connection electrode includes a first connector electrically connected to the gate electrode of the driving transistor, a second connector electrically connected to a second electrode of the second transistor, and a main body disposed between the first connector and the second connector. The device includes an initialization voltage line disposed on the substrate and applying an initialization voltage. The initialization voltage line surrounds at least a part of the second connector of the first connection electrode.

公开(公告)号：US11384437B2

公开(公告)日：2022-07-12

申请号：US16854342

申请日：2020-04-21

Applicant: Samsung Display Co., Ltd.

Inventor： Jong Hee Park ,  Jin Seock Kim ,  Bong Won Lee ,  Sang-woo Kim ,  Il-Ryong Park ,  Bong-Yeon Won ,  Dae-woo Lee

IPC: C09K13/06 ,  C23F1/16 ,  C23F1/30 ,  H01L21/3213 ,  C23F1/02 ,  H05K3/06 ,  H01L27/12 ,  H01L29/786

Abstract: A phosphoric acid-free etchant composition and a method of forming a wiring, the composition including about 40 wt % to about 60 wt % of an organic acid compound; about 6 wt % to about 12 wt % of a glycol compound; about 1 wt % to about 10 wt % of nitric acid, sulfuric acid, or hydrochloric acid; about 1 wt % to about 10 wt % of a nitrate salt compound; and water, all wt % being based on a total weight of the phosphoric acid-free etchant composition.