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公开(公告)号：US20220190025A1
公开(公告)日：2022-06-16
申请号：US17401713
申请日：2021-08-13
发明人： Chul Jong YOO , Dong Uk KIM , Se Young KIM , So Young LEE , Hyung Rae CHA
摘要： A light emitting diode includes a first end and a second end facing each other, a current blocking layer, a first semiconductor layer, an active layer, a second semiconductor layer, and an insulating film surrounding outer circumferential surfaces of the first semiconductor layer, the active layer, and the second semiconductor layer and exposing at least a portion of the current blocking layer and at least a portion of the first semiconductor layer at the second end. The current blocking layer, the first semiconductor layer, the active layer, and the second semiconductor layer are sequentially disposed in a direction from the second end to the first end.
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公开(公告)号：US20230027490A1
公开(公告)日：2023-01-26
申请号：US17786260
申请日：2020-12-15
发明人： Hye Lim KANG , Dong Gyun KIM , Hoo Keun PARK , Moon Jung AN , Chul Jong YOO , Dong Eon LEE
摘要： A display device includes a first electrode, a second electrode disposed spaced apart from the first electrode in a first direction, and an element part disposed between the first electrode and the second electrode. The element part includes light-emitting elements that have a shape extending in one direction and are arranged spaced apart from each other in a second direction perpendicular to the first direction; and a binder surrounding each of the light-emitting elements and fixing the light-emitting elements. The one direction in which the light-emitting elements extend is parallel to the first direction.
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公开(公告)号：US20220077350A1
公开(公告)日：2022-03-10
申请号：US17307717
申请日：2021-05-04
发明人： Jong Won LEE , Je Won YOO , Chul Jong YOO , Hyun Min CHO
摘要： A light emitting element and a display device including the same are provided. The light emitting element includes: a first semiconductor layer, a second semiconductor layer, and an active layer between the first semiconductor layer and the second semiconductor layer; a passivation layer surrounding an outer surface of at least one selected from the first semiconductor layer, the second semiconductor layer, and the active layer; and an insulation layer surrounding an outer surface of the passivation layer, wherein the passivation layer includes a two-dimensional (2D) material.
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4.发明公开公开(公告)号：US20240339561A1
公开(公告)日：2024-10-10
申请号：US18604563
申请日：2024-03-14
发明人： Ji Song CHAE , Dae Hyun KIM , Sang Ho PARK , Jae Woong YOO , Chul Jong YOO , Sang Hoon LEE , Joo Hee LEE , Jin Hyuk JANG , Sang Ho JEON , Seon Hong CHOI
CPC分类号： H01L33/025 , H01L25/167 , H01L33/0066 , H01L33/44 , H01L2933/0025
摘要： A light emitting element may include a semiconductor stack structure including an N-type semiconductor layer, a P-type semiconductor layer, and an active layer disposed between the N-type semiconductor layer and the P-type semiconductor layer, and an insulating layer disposed on a side portion of the semiconductor stack structure. The semiconductor stack structure may include a fluorinated area disposed adjacent to the insulating layer.
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公开(公告)号：US20220336711A1
公开(公告)日：2022-10-20
申请号：US17694889
申请日：2022-03-15
发明人： Se Young KIM , Jong Lam LEE , Won Seok CHO , Dong Uk KIM , Jae Yong PARK , Chul Jong YOO
摘要： A light-emitting element and a display device including the same are provided. The light-emitting element comprises a first semiconductor layer doped with an n-type dopant, a second semiconductor layer disposed below the first semiconductor layer and doped with a p-type dopant, a light-emitting layer disposed between the first semiconductor layer and the second semiconductor layer, a first intermediate layer disposed on the first semiconductor layer, and including a metal, and an electrode layer disposed on the first intermediate layer. Light from the light-emitting layer transmits through the first semiconductor layer, the first intermediate layer, and the electrode layer at a transmittance equal to or greater than about 70%.
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公开(公告)号：US20220173158A1
公开(公告)日：2022-06-02
申请号：US17520227
申请日：2021-11-05
发明人： Seung Geun LEE , Byung Ju LEE , Hoo Keun PARK , Chul Jong YOO , Dong Eon LEE
摘要： A display device includes a first subpixel and a second subpixel, wherein the first subpixel includes a first light source unit including a plurality of first light-emitting elements configured to emit first light having a center wavelength of a first wavelength, the second subpixel includes a second light source unit including a plurality of second light-emitting elements configured to emit second light having a center wavelength of a second wavelength, the first light source unit includes first to nth light-emitting groups that are connected in series, each of the groups including the plurality of first light-emitting elements, the second light source unit includes first to mth light-emitting groups that are connected in series and each of the groups includes the plurality of second light-emitting elements, where n and m are natural numbers, and the second wavelength is different from the first wavelength.
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公开(公告)号：US20240313167A1
公开(公告)日：2024-09-19
申请号：US18504233
申请日：2023-11-08
发明人： Hyeong Su CHOI , Dae Hyun KIM , In Hyuk KIM , Dong Kyun SEO , Young Chul SIM , Chul Jong YOO , Choel Min JANG , Tae Ha JIN
CPC分类号： H01L33/44 , H01L25/167
摘要： A light emitting element may include a light emitting stack pattern including a first semiconductor layer, an active layer, and a second semiconductor layer. An insulating film may surround an outer circumferential surface of the light emitting stack pattern. The insulating film may include a first layer, a second layer surrounding the first layer, and a third layer surrounding the second layer. The first layer and the third layer may include a same material.
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公开(公告)号：US20230006095A1
公开(公告)日：2023-01-05
申请号：US17757218
申请日：2020-12-07
发明人： Hoo Keun PARK , Moon Jung AN , Dong Eon LEE , Chul Jong YOO , Hye Lim KANG , Dong Gyun KIM
摘要： A light-emitting element including: a first semiconductor layer doped with a first type of dopant; a second semiconductor layer doped with a second type of dopant that is different from the first type of dopant; and an active layer between the first semiconductor layer and the second semiconductor layer, wherein a length of the light-emitting element measured in a first direction, which may be a direction in which the first semiconductor layer, the active layer, and the second semiconductor layer may be arranged, may be shorter than the width measured in a second direction that is perpendicular to the first direction.
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公开(公告)号：US20220376144A1
公开(公告)日：2022-11-24
申请号：US17636218
申请日：2020-02-27
发明人： Moon Jung AN , Sung Chan JO , Hoo Keun PARK , Chul Jong YOO , Hye Lim KANG , Dong Gyun KIM , Dong Eon LEE , Hyun Min CHO
摘要： A light emitting element includes: a first semiconductor layer doped with a first polarity; a second semiconductor layer doped with a second polarity different from the first polarity; an active layer between the first semiconductor layer and the second semiconductor layer in a first direction; and an insulating film surrounding an outer surface of at least the active layer and extending in the first direction. A thickness of a first portion of the insulating film surrounding the active layer is in a range of 10% to 16% of a diameter of the active layer.
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公开(公告)号：US20220367756A1
公开(公告)日：2022-11-17
申请号：US17638169
申请日：2020-02-27
发明人： Dong Eon LEE , Hoo Keun PARK , Moon Jung AN , Chul Jong YOO , Hye Lim KANG , Dong Gyun KIM
摘要： A light emitting element includes: a first semiconductor layer doped with a first polarity; a second semiconductor layer doped with a second polarity different from the first polarity; an active layer between the first semiconductor layer and the second semiconductor layer in a first direction; a first outer film around an outer surface of at least the active layer and extending in the first direction; and a second outer film around an outer surface of a portion of the first semiconductor layer on which the first outer film is not present.
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