ATOMIC LAYER DEPOSITION APPARATUS AND METHOD OF ATOMIC LAYER DEPOSITION USING THE SAME
    1.
    发明申请
    ATOMIC LAYER DEPOSITION APPARATUS AND METHOD OF ATOMIC LAYER DEPOSITION USING THE SAME 有权
    原子层沉积装置及其原子层沉积方法

    公开(公告)号:US20150275362A1

    公开(公告)日:2015-10-01

    申请号:US14531170

    申请日:2014-11-03

    IPC分类号: C23C16/455 C23C16/458

    摘要: An atomic layer deposition apparatus includes: a substrate support supporting a substrate; a first divider including a plurality of first division modules provided on the substrate support and selectively spraying a source gas, a reaction gas, and a purge gas to each of predetermined areas; and a second divider including a plurality of second division modules provided on the first divider and supplying the gases to the respective first division modules, wherein each of the plurality of second division modules is formed of a first through-hole and a second through-hole, and the gas passed through the first and second through-holes moves to the first division modules.

    摘要翻译: 原子层沉积设备包括:支撑衬底的衬底支撑件; 第一分隔器,包括设置在所述基板支撑件上的多个第一分割模块,并且选择性地将源气体,反应气体和吹扫气体喷射到每个预定区域; 以及第二分隔器,其包括设置在所述第一分隔器上的多个第二分割模块,并将气体供应到相应的第一分割模块,其中所述多个第二分割模块中的每一个由第一通孔和第二通孔 并且通过第一和第二通孔的气体移动到第一分割模块。

    APPARATUS FOR MANUFACTURING DISPLAY DEVICE
    3.
    发明公开

    公开(公告)号:US20240145219A1

    公开(公告)日:2024-05-02

    申请号:US18331333

    申请日:2023-06-08

    摘要: An apparatus for manufacturing a display device includes a gas exhaust unit and a gas spray unit. The gas exhaust unit includes first and second sidewalls disposed side by side along a first direction, and an upper plate disposed on the first and second sidewalls, a first partition disposed between the first and second sidewalls and extending away from a lower surface of the upper plate in a second direction. The gas spray unit includes first and second spray portions spraying first and second gases in the second direction. The first partition includes first and second surfaces, a third surface connecting the first surface to the second surface, first and second horizontal openings formed at the first and second surfaces, a first vertical opening formed at the third surface, and a first sub exhaust path connecting the first and second horizontal openings, and the first vertical opening with each other.

    THIN FILM DEPOSITION APPARATUS
    4.
    发明申请
    THIN FILM DEPOSITION APPARATUS 审中-公开
    薄膜沉积装置

    公开(公告)号:US20160138157A1

    公开(公告)日:2016-05-19

    申请号:US14702985

    申请日:2015-05-04

    摘要: A thin film deposition apparatus, including a plurality of linear nozzle parts separated from each other; and an exhaust plate to which is attached the plurality of linear nozzle parts, each linear nozzle part including a linear body member; a pair of first reaction gas pipes in the linear body member and inflowing a first reaction gas; a second reaction gas pipe between the pair of first reaction gas pipes and inflowing a second reaction gas; and a pair of control gas pipes between each of the first reaction gas pipes and the second reaction gas pipe and inflowing a control gas controlling a flow of the second reaction gas.

    摘要翻译: 一种薄膜沉积设备,包括彼此分离的多个线性喷嘴部件; 以及排气板,多个直线喷嘴部附接有排气板,每个直线喷嘴部分包括线状体部件; 一对第一反应气体管道,并且流入第一反应气体; 在所述一对第一反应气体管之间的第二反应气体管道,并流入第二反应气体; 以及在所述第一反应气体管道和所述第二反应气体管道中的每一个之间的一对控制气体管道,并且输入控制所述第二反应气体的流动的控制气体。

    ATOMIC LAYER DEPOSITION APPARATUS AND ATOMIC LAYER DEPOSITION METHOD USING THE SAME

    公开(公告)号:US20230265558A1

    公开(公告)日:2023-08-24

    申请号:US17993147

    申请日:2022-11-23

    IPC分类号: C23C16/455

    CPC分类号: C23C16/45504 C23C16/45544

    摘要: An atomic layer deposition apparatus includes a substrate support which supports a substrate; a process module on the substrate support; a first gas pipe which supplies a first gas to the process module; a second gas pipe which supplies a second gas to the process module; and an exhaust part which discharges the first and second gases supplied to the process module. The process module includes: a first gas supply flow path portion connected to the first gas pipe; a second gas supply flow path portion under the first gas supply flow path portion and connected to the second gas pipe; and a gas exhaust flow path portion connected to the exhaust part. The gas exhaust flow path is spaced apart from the first and second gas supply flow path portions with the substrate therebetween, and the first and second gases pass through a process area in a laminar flow.

    DISPLAY DEVICE AND METHOD OF MANUFACTURING THE SAME

    公开(公告)号:US20210066656A1

    公开(公告)日:2021-03-04

    申请号:US16985969

    申请日:2020-08-05

    IPC分类号: H01L51/52 H01L51/56

    摘要: A display device includes a substrate, a light-emitting element layer disposed on the substrate, a first encapsulation layer and a second encapsulation layer which are disposed on the light-emitting element layer, and a buffer layer which covers the first encapsulation layer and the second encapsulation layer. The second encapsulation layer includes a first film, a second film disposed on the first film, and a third film disposed between the first film and the second film, and a side surface of the third film is disposed more inward than a side surface of the first film and a side surface of the second film.

    ATOMIC LAYER DEPOSITION APPARATUS
    7.
    发明申请
    ATOMIC LAYER DEPOSITION APPARATUS 有权
    原子层沉积装置

    公开(公告)号:US20150259798A1

    公开(公告)日:2015-09-17

    申请号:US14444231

    申请日:2014-07-28

    IPC分类号: C23C16/455

    摘要: An atomic layer deposition apparatus includes a first base plate on which a seat portion is defined to allow a substrate to be seated thereon, a second base plate disposed opposite to the first base plate, a first gas nozzle portion arranged on the second base plate, a second gas nozzle portion arranged on the second base plate to be spaced apart from the first gas nozzle portion and substantially parallel to the first gas nozzle portion, and a gas storage portion connected to the first gas nozzle portion and the second gas nozzle portion.

    摘要翻译: 原子层沉积装置包括:第一基板,其上限定有用于使基板安置的座部的第一基板;与第一基板相对设置的第二基板;布置在第二基板上的第一气体喷嘴部; 第二气体喷嘴部分,布置在第二基板上以与第一气体喷嘴部分间隔开并且基本上平行于第一气体喷嘴部分;以及气体存储部分,连接到第一气体喷嘴部分和第二气体喷嘴部分。