DISPLAY APPARATUS
    1.
    发明申请
    DISPLAY APPARATUS 有权
    显示设备

    公开(公告)号:US20160180792A1

    公开(公告)日:2016-06-23

    申请号:US14736642

    申请日:2015-06-11

    CPC classification number: G09G3/3648 G09G3/3614 G09G2300/0452 G09G2300/0876

    Abstract: A display apparatus includes a display panel which includes a gate line, a data line and a storage line, and displays an image, a gate driving part configured to output a gate signal to the gate line, a data driving part configured to output a data signal based on an image data of the image to the data line, and a voltage providing part configured to apply an alternating current voltage to the storage line.

    Abstract translation: 显示装置包括:显示面板,包括栅极线,数据线和存储线,并显示图像;门驱动部,被配置为向栅极线输出栅极信号;数据驱动部,被配置为输出数据 基于图像到数据线的图像数据的信号,以及被配置为向存储线施加交流电压的电压提供部。

    VISIBLE SENSING TRANSISTOR, DISPLAY PANEL AND MANUFACTURING METHOD THEREOF
    4.
    发明申请
    VISIBLE SENSING TRANSISTOR, DISPLAY PANEL AND MANUFACTURING METHOD THEREOF 有权
    可见感应晶体管,显示面板及其制造方法

    公开(公告)号:US20130234142A1

    公开(公告)日:2013-09-12

    申请号:US13872605

    申请日:2013-04-29

    Abstract: A display device includes an infrared sensing transistor and a visible sensing transistor. The visible sensing transistor includes a semiconductor on a substrate; an ohmic contact on the semiconductor; an etch stopping layer on the ohmic contact; a source electrode and a drain electrode on the etch stopping layer; a passivation layer on the source electrode and the drain electrode; and a gate electrode on the passivation layer. The etch stopping layer may be composed of the same material as the source electrode and the drain electrode. The infrared sensing transistor is similar to the visible sensing transistor except the etch stopping layer is absent.

    Abstract translation: 显示装置包括红外感测晶体管和可见感测晶体管。 可见感测晶体管包括在衬底上的半导体; 半导体上的欧姆接触; 在欧姆接触上的蚀刻停止层; 蚀刻停止层上的源电极和漏电极; 源电极和漏电极上的钝化层; 和钝化层上的栅电极。 蚀刻停止层可以由与源电极和漏电极相同的材料构成。 除了不存在蚀刻停止层之外,红外感测晶体管类似于可见感测晶体管。

    VISIBLE SENSING TRANSISTOR, DISPLAY PANEL AND MANUFACTURING METHOD THEREOF
    5.
    发明申请
    VISIBLE SENSING TRANSISTOR, DISPLAY PANEL AND MANUFACTURING METHOD THEREOF 审中-公开
    可见感应晶体管,显示面板及其制造方法

    公开(公告)号:US20140218644A1

    公开(公告)日:2014-08-07

    申请号:US14251282

    申请日:2014-04-11

    Abstract: A display device includes an infrared sensing transistor and a visible sensing transistor. The visible sensing transistor includes a semiconductor on a substrate; an ohmic contact on the semiconductor; an etch stopping layer on the ohmic contact; a source electrode and a drain electrode on the etch stopping layer; a passivation layer on the source electrode and the drain electrode; and a gate electrode on the passivation layer. The etch stopping layer may be composed of the same material as the source electrode and the drain electrode. The infrared sensing transistor is similar to the visible sensing transistor except the etch stopping layer is absent.

    Abstract translation: 显示装置包括红外感测晶体管和可见感测晶体管。 可见感测晶体管包括在衬底上的半导体; 半导体上的欧姆接触; 在欧姆接触上的蚀刻停止层; 蚀刻停止层上的源电极和漏电极; 源电极和漏电极上的钝化层; 和钝化层上的栅电极。 蚀刻停止层可以由与源电极和漏电极相同的材料构成。 除了不存在蚀刻停止层之外,红外感测晶体管类似于可见感测晶体管。

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