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    THIN FILM TRANSISTOR ARRAY PANEL HAVING IMPROVED APERTURE RATIO AND METHOD OF MANUFACTURING SAME
    3.
    发明申请
    THIN FILM TRANSISTOR ARRAY PANEL HAVING IMPROVED APERTURE RATIO AND METHOD OF MANUFACTURING SAME 有权
    具有改进的孔径比的薄膜晶体管阵列及其制造方法

    公开(公告)号：US20130306972A1

    公开(公告)日：2013-11-21

    申请号：US13725333

    申请日：2012-12-21

    Applicant: SAMSUNG DISPLAY CO., LTD.

    Inventor： Hye Young RYU ,  Ki Won KIM ,  Jae Woo PARK ,  Kap Soo YOON ,  Young Joo CHOI

    IPC: H01L29/786 ,  H01L33/08

    CPC classification number: H01L29/786 ,  H01L27/1225 ,  H01L27/124 ,  H01L33/08

    Abstract: A thin film transistor array panel according to an exemplary embodiment of the present invention includes: a substrate; a gate line positioned on the substrate; a gate insulating layer positioned on the gate line; a semiconductor layer positioned on the gate insulating layer and having a channel portion; a data line including a source electrode and a drain electrode, the source and drain electrodes both positioned on the semiconductor layer; a passivation layer positioned on the data line and the drain electrode and having a contact hole formed therein; and a pixel electrode positioned on the passivation layer, wherein the pixel electrode contacts the drain electrode within the contact hole, and the channel portion of the semiconductor layer and the contact hole both overlap the gate line in a plan view of the substrate.

    Abstract translation: 根据本发明的示例性实施例的薄膜晶体管阵列面板包括：基板; 位于基板上的栅极线; 位于栅极线上的栅极绝缘层; 位于所述栅极绝缘层上且具有沟道部分的半导体层; 包括源电极和漏电极的数据线，所述源极和漏极都位于所述半导体层上; 位于数据线和漏电极上并具有形成在其中的接触孔的钝化层; 位于所述钝化层上的像素电极，其中所述像素电极在所述接触孔内接触所述漏电极，并且所述半导体层的沟道部分和所述接触孔在所述衬底的平面图中与所述栅极线重叠。

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