DISPLAY SUBSTRATE
    4.
    发明申请
    DISPLAY SUBSTRATE 有权
    显示基板

    公开(公告)号:US20160217756A1

    公开(公告)日:2016-07-28

    申请号:US14788278

    申请日:2015-06-30

    IPC分类号: G09G3/36

    摘要: A display substrate. The display substrate includes: a plurality of pixel units; a gate driving unit supplying a gate signal to the plurality of pixel units and including a plurality of shift register circuits which are dependently connected to each other; a vertical start line supplying a vertical start signal to the gate driving unit; and an electrostatic protection unit having two ends connected to different points of the vertical start line, the electrostatic protection unit including a plurality of back-to-back diodes connected in series with each other between the two ends. Each of the back-to-back diodes include a pair of diodes connected in parallel to each other in a bidirectional diode structure.

    摘要翻译: 显示基板。 显示基板包括:多个像素单元; 栅极驱动单元,向所述多个像素单元提供栅极信号,并且包括彼此依赖性连接的多个移位寄存器电路; 垂直起始线,向所述门驱动单元提供垂直起动信号; 以及静电保护单元,其具有连接到所述垂直起始线的不同点的两端,所述静电保护单元包括在两端之间彼此串联连接的多个背对背二极管。 每个背对背二极管包括以双向二极管结构彼此并联连接的一对二极管。

    DISPLAY DEVICE AND METHOD OF FABRICATING THE SAME

    公开(公告)号:US20230053184A1

    公开(公告)日:2023-02-16

    申请号:US17831387

    申请日:2022-06-02

    IPC分类号: H01L27/32 H01L51/56

    摘要: A display device and a method of fabricating the same, the display device including a light-blocking layer disposed on a substrate, a buffer layer disposed on the light-blocking layer, a semiconductor layer disposed on the buffer layer, a gate insulating layer disposed on the semiconductor layer, a connection pattern layer and a gate electrode disposed on the gate insulating layer and spaced apart from each other, an interlayer dielectric layer disposed on the connection pattern layer and the gate electrode, a via layer disposed on the interlayer dielectric layer, a first bridge layer and a second bridge layer disposed on the via layer, a pixel electrode disposed on the second bridge layer, and a light-emitting layer disposed on the pixel electrode. An end of the first bridge layer is connected to the light-blocking layer through the connection pattern layer, and another end thereof is connected to the semiconductor layer. The second bridge layer connects the semiconductor layer with the pixel electrode.

    DISPLAY DEVICE
    7.
    发明申请

    公开(公告)号:US20210091163A1

    公开(公告)日:2021-03-25

    申请号:US16892988

    申请日:2020-06-04

    IPC分类号: H01L27/32 G09G3/32

    摘要: A display device includes a substrate, a first conductive layer on the substrate, the first conductive layer including a data signal line, a first insulating layer on the first conductive layer, a semiconductor layer on the first insulating layer, the semiconductor layer including a first semiconductor pattern, a second insulating layer on the semiconductor layer, and a second conductive layer on the second insulating layer, the second conductive layer including a gate electrode disposed to overlap the first semiconductor pattern, a transistor first electrode disposed to overlap a part of the first semiconductor pattern, wherein the transistor first electrode is electrically connected to the data signal line through a contact hole that penetrates the first and second insulating layers, and a transistor second electrode disposed to overlap another part of the first semiconductor pattern.

    THIN FILM TRANSISTOR AND METHOD OF MANUFACTURING THE SAME
    9.
    发明申请
    THIN FILM TRANSISTOR AND METHOD OF MANUFACTURING THE SAME 有权
    薄膜晶体管及其制造方法

    公开(公告)号:US20160218197A1

    公开(公告)日:2016-07-28

    申请号:US14956056

    申请日:2015-12-01

    摘要: There are provided a method of manufacturing a thin film transistor and a display including a thin film transistor.The method of manufacturing a thin film transistor includes forming a barrier layer cm a substrate, forming a semiconductor layer on the barrier layer, forming a gate insulating layer on the semiconductor layer, forming a gate electrode on the gate insulating layer, forming an offset region on an external surface of the gate electrode through a plasma heat treatment process or an annealing process, etching, an offset region of the gate electrode, etching a gate insulating layer except for a portion of the gate insulating layer, positioned below the gate electrode, forming an interlayer insulating layer on the gate electrode, and etching, the interlayer insulating layer to form a source electrode and a drain electrode.

    摘要翻译: 提供了制造薄膜晶体管的方法和包括薄膜晶体管的显示器。 制造薄膜晶体管的方法包括在衬底上形成衬底,在阻挡层上形成半导体层,在半导体层上形成栅极绝缘层,在栅极绝缘层上形成栅电极,形成偏移区域 通过等离子体热处理工艺或退火工艺在栅电极的外表面上蚀刻栅电极的偏移区域,蚀刻位于栅电极下方的栅绝缘层以外的栅极绝缘层, 在所述栅电极上形成层间绝缘层,并蚀刻所述层间绝缘层以形成源电极和漏电极。

    DISPLAY DEVICE AND METHOD OF FABRICATING THE SAME

    公开(公告)号:US20210036076A1

    公开(公告)日:2021-02-04

    申请号:US16895756

    申请日:2020-06-08

    IPC分类号: H01L27/32

    摘要: A display device includes a substrate having a display area and a pad area. A gate conductive layer disposed on the substrate includes a gate conductive metal layer and a gate capping layer. The gate conductive layer forms a gate electrode in the display area and a wire pad in the pad area that is exposed by a pad opening. An interlayer insulating film disposed on the gate conductive layer covers the gate electrode. A data conductive layer disposed on the interlayer insulating film in the display area includes source and drain electrodes. A passivation layer disposed on the data conductive layer covers the source and drain electrodes. A via layer is disposed on the passivation layer. A pixel electrode is disposed on the via layer. The pixel electrode is connected to the source electrode through a contact hole penetrating the via layer and the passivation layer.