-
公开(公告)号:US20220057659A1
公开(公告)日:2022-02-24
申请号:US17520829
申请日:2021-11-08
发明人: Tae Hee LEE , Hyoung Joon KIM , Hyo Jin KIM , Kap Soo YOON , Jeong Uk HEO , Ji Yun HONG
IPC分类号: G02F1/01 , G02F1/1339 , G02F1/1335 , G02F1/1341 , G02F1/1343 , G02F1/13
摘要: A liquid crystal display includes a first substrate including: a display area including a plurality of pixels on the first substrate, a non-display area which is disposed on an outside of the display area and in which a dummy wire is disposed on the first substrate, and an image input hole which is defined therein in the non-display area and in which an image input device is disposed, a second substrate facing the first substrate and including a display area and a non-display area corresponding to those of the first substrate, a liquid crystal layer interposed between the first and second substrates, and a sealant which is in the non-display area of the first and second substrates and seals the liquid crystal layer between the first and second substrates. The dummy wire is disposed near the image input hole.
-
公开(公告)号:US20160027805A1
公开(公告)日:2016-01-28
申请号:US14875320
申请日:2015-10-05
发明人: Hye Young RYU , Hee Jun BYEON , Woo Geun LEE , Kap Soo YOON , Yoon Ho KIM , Chun Won BYUN
IPC分类号: H01L27/12 , G02F1/1368 , G02F1/1362
CPC分类号: H01L27/127 , G02F1/134363 , G02F1/136227 , G02F1/136286 , G02F1/1368 , G02F2001/136222 , G02F2001/136295 , H01L27/1225 , H01L27/124 , H01L27/1248 , H01L27/1262
摘要: A thin film transistor array panel and a manufacturing method thereof according to an exemplary embodiment of the present invention form a contact hole in a second passivation layer formed of an organic insulator, protect a side of the contact hole by covering with a protection member formed of the same layer as the first field generating electrode and formed of a transparent conductive material, and etch the first passivation layer below the second passivation layer using the protection member as a mask. Therefore, it is possible to prevent the second passivation layer formed of an organic insulator from being overetched while etching the insulating layer below the second passivation layer so that the contact hole is prevented from being made excessively wide.
-
公开(公告)号:US20170097528A1
公开(公告)日:2017-04-06
申请号:US15259127
申请日:2016-09-08
发明人: Hyoung-Joon KIM , Hyo Jin KIM , Kap Soo YOON , Jeong Hyun LEE , Tae Hee LEE , So Young JUN , Soong Won CHO , Jeong Uk HEO
IPC分类号: G02F1/1339 , G02F1/1335
CPC分类号: G02F1/1339 , G02F1/133512 , G02F1/133514 , G02F1/133516 , G02F1/13394 , G02F2001/133325 , G02F2001/133388 , G02F2001/133519 , G02F2001/13398
摘要: The exemplary embodiments relate generally to a display device that may include: a first substrate and a second substrate, each including a transparent encapsulation area; an outer sealant along a side of the transparent encapsulation area; a pattern part disposed on the first substrate and extending in a direction parallel to the outer sealant; and a transparent sealant adjacent to the pattern part and extending in a direction parallel to the pattern part, and a manufacturing method thereof.
-
公开(公告)号:US20160217756A1
公开(公告)日:2016-07-28
申请号:US14788278
申请日:2015-06-30
发明人: Young-Jin KIM , Byoung-Ju Kim , Jae-Hyun PARK , Kap Soo YOON , Jun Hyuck JEON , Jeong Uk HEO
IPC分类号: G09G3/36
CPC分类号: H01L27/0255 , G02F1/136204 , G09G3/3648 , G09G2300/0408 , G09G2300/0413 , G09G2300/0426 , G09G2330/04 , H02H9/046
摘要: A display substrate. The display substrate includes: a plurality of pixel units; a gate driving unit supplying a gate signal to the plurality of pixel units and including a plurality of shift register circuits which are dependently connected to each other; a vertical start line supplying a vertical start signal to the gate driving unit; and an electrostatic protection unit having two ends connected to different points of the vertical start line, the electrostatic protection unit including a plurality of back-to-back diodes connected in series with each other between the two ends. Each of the back-to-back diodes include a pair of diodes connected in parallel to each other in a bidirectional diode structure.
摘要翻译: 显示基板。 显示基板包括:多个像素单元; 栅极驱动单元,向所述多个像素单元提供栅极信号,并且包括彼此依赖性连接的多个移位寄存器电路; 垂直起始线,向所述门驱动单元提供垂直起动信号; 以及静电保护单元,其具有连接到所述垂直起始线的不同点的两端,所述静电保护单元包括在两端之间彼此串联连接的多个背对背二极管。 每个背对背二极管包括以双向二极管结构彼此并联连接的一对二极管。
-
公开(公告)号:US20240324320A1
公开(公告)日:2024-09-26
申请号:US18517068
申请日:2023-11-22
发明人: Ki Won KIM , Jeong Ju PARK , Seung Sok SON , Kap Soo YOON , Woo Geun LEE , Ji Yun HONG
IPC分类号: H10K59/123 , H10K59/12 , H10K71/60
CPC分类号: H10K59/123 , H10K59/1201 , H10K71/60
摘要: A method for fabricating a display device includes providing a substrate into a chamber; forming an active material layer on the substrate by a plurality of deposition processes in the chamber; forming an active layer by patterning the active material layer: forming a transistor including a gate electrode overlapping the active layer; and forming a pixel electrode on the transistor, at least two deposition processes among the plurality of deposition processes are performed by applying different magnitudes of power, respectively.
-
公开(公告)号:US20230053184A1
公开(公告)日:2023-02-16
申请号:US17831387
申请日:2022-06-02
发明人: Seul Ki KIM , Kap Soo YOON , Jae Hyun LEE , Seung Ha CHOI , Jong Bum CHOI
摘要: A display device and a method of fabricating the same, the display device including a light-blocking layer disposed on a substrate, a buffer layer disposed on the light-blocking layer, a semiconductor layer disposed on the buffer layer, a gate insulating layer disposed on the semiconductor layer, a connection pattern layer and a gate electrode disposed on the gate insulating layer and spaced apart from each other, an interlayer dielectric layer disposed on the connection pattern layer and the gate electrode, a via layer disposed on the interlayer dielectric layer, a first bridge layer and a second bridge layer disposed on the via layer, a pixel electrode disposed on the second bridge layer, and a light-emitting layer disposed on the pixel electrode. An end of the first bridge layer is connected to the light-blocking layer through the connection pattern layer, and another end thereof is connected to the semiconductor layer. The second bridge layer connects the semiconductor layer with the pixel electrode.
-
公开(公告)号:US20210091163A1
公开(公告)日:2021-03-25
申请号:US16892988
申请日:2020-06-04
发明人: Seung Sok SON , Woo Geun LEE , Seul Ki KIM , Kap Soo YOON , Hyun Woong BAEK , Jae Hyun LEE , Su Jung JUNG , Jung Kyoung CHO , Seung Ha CHOI , June Whan CHOI
摘要: A display device includes a substrate, a first conductive layer on the substrate, the first conductive layer including a data signal line, a first insulating layer on the first conductive layer, a semiconductor layer on the first insulating layer, the semiconductor layer including a first semiconductor pattern, a second insulating layer on the semiconductor layer, and a second conductive layer on the second insulating layer, the second conductive layer including a gate electrode disposed to overlap the first semiconductor pattern, a transistor first electrode disposed to overlap a part of the first semiconductor pattern, wherein the transistor first electrode is electrically connected to the data signal line through a contact hole that penetrates the first and second insulating layers, and a transistor second electrode disposed to overlap another part of the first semiconductor pattern.
-
公开(公告)号:US20190004366A1
公开(公告)日:2019-01-03
申请号:US16122959
申请日:2018-09-06
发明人: Dong Ju YANG , Seul Ki KIM , Hyun Jung LEE , Hyo Jin KIM , Kap Soo YOON , Jeong Hyun LEE , Yun Seok HAN , Jeong Uk HEO
IPC分类号: G02F1/1335 , H01L27/12 , H01L29/786 , G02F1/1339 , G02F1/1343 , G02F1/1333 , G02F1/1362 , G02F1/1368 , G09G3/36
CPC分类号: G02F1/133512 , G02F1/133345 , G02F1/133514 , G02F1/133553 , G02F1/13394 , G02F1/134309 , G02F1/13439 , G02F1/136209 , G02F1/136286 , G02F1/1368 , G02F2001/13398 , G02F2001/134372 , G02F2201/121 , G02F2201/123 , G02F2201/40 , G02F2203/04 , G09G3/3648 , G09G3/3688 , G09G3/3696 , G09G2300/0426 , G09G2310/08 , H01L27/124 , H01L29/78633
摘要: A display device is provided. The display device includes a first base substrate, a gate line on the first base substrate and extending in a first direction, a data line disposed on the first base substrate, insulated from the gate line, and extending in a second direction, which crosses the first direction, a switch on the first base substrate and electrically connected to the gate line and the data line, an insulating layer on the switch, a first electrode on the insulating layer, a light-shielding conductive layer directly contacting the first electrode and overlapping the switch, and a second electrode insulated from the first electrode and the light-shielding conductive layer, at least partially overlapping the first electrode, and electrically connected to the switch.
-
公开(公告)号:US20160218197A1
公开(公告)日:2016-07-28
申请号:US14956056
申请日:2015-12-01
发明人: Myung Kwan RYU , Ki Hwan KIM , Kap Soo YOON , Hyeon Jun LEE , Jeong Uk HEO
IPC分类号: H01L29/66 , H01L21/306 , H01L29/417 , H01L21/324 , H01L29/786 , H01L29/423
CPC分类号: H01L29/66742 , H01L21/324 , H01L29/42384 , H01L29/66757 , H01L29/66969 , H01L29/78621 , H01L29/78666 , H01L29/78681 , H01L29/78684 , H01L29/7869
摘要: There are provided a method of manufacturing a thin film transistor and a display including a thin film transistor.The method of manufacturing a thin film transistor includes forming a barrier layer cm a substrate, forming a semiconductor layer on the barrier layer, forming a gate insulating layer on the semiconductor layer, forming a gate electrode on the gate insulating layer, forming an offset region on an external surface of the gate electrode through a plasma heat treatment process or an annealing process, etching, an offset region of the gate electrode, etching a gate insulating layer except for a portion of the gate insulating layer, positioned below the gate electrode, forming an interlayer insulating layer on the gate electrode, and etching, the interlayer insulating layer to form a source electrode and a drain electrode.
摘要翻译: 提供了制造薄膜晶体管的方法和包括薄膜晶体管的显示器。 制造薄膜晶体管的方法包括在衬底上形成衬底,在阻挡层上形成半导体层,在半导体层上形成栅极绝缘层,在栅极绝缘层上形成栅电极,形成偏移区域 通过等离子体热处理工艺或退火工艺在栅电极的外表面上蚀刻栅电极的偏移区域,蚀刻位于栅电极下方的栅绝缘层以外的栅极绝缘层, 在所述栅电极上形成层间绝缘层,并蚀刻所述层间绝缘层以形成源电极和漏电极。
-
公开(公告)号:US20210036076A1
公开(公告)日:2021-02-04
申请号:US16895756
申请日:2020-06-08
发明人: Seul Ki KIM , Seung Sok SON , Kap Soo YOON , Woo Geun LEE , Su Jung JUNG , Seung Ha CHOI
IPC分类号: H01L27/32
摘要: A display device includes a substrate having a display area and a pad area. A gate conductive layer disposed on the substrate includes a gate conductive metal layer and a gate capping layer. The gate conductive layer forms a gate electrode in the display area and a wire pad in the pad area that is exposed by a pad opening. An interlayer insulating film disposed on the gate conductive layer covers the gate electrode. A data conductive layer disposed on the interlayer insulating film in the display area includes source and drain electrodes. A passivation layer disposed on the data conductive layer covers the source and drain electrodes. A via layer is disposed on the passivation layer. A pixel electrode is disposed on the via layer. The pixel electrode is connected to the source electrode through a contact hole penetrating the via layer and the passivation layer.
-
-
-
-
-
-
-
-
-