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    DISPLAY APPARATUS AND METHOD OF MANUFACTURING THE SAME
    6.
    发明申请
    DISPLAY APPARATUS AND METHOD OF MANUFACTURING THE SAME 有权

    公开(公告)号：US20230037108A1

    公开(公告)日：2023-02-02

    申请号：US17841206

    申请日：2022-06-15

    Applicant: Samsung Display Co., Ltd.

    Inventor： Soyoung Koo ,  Eoksu Kim ,  Hyungjun Kim ,  Yunyong Nam ,  Junhyung Lim ,  Kyungjin Jeon

    IPC: H01L27/32 ,  G09G3/3266 ,  G09G3/3291

    Abstract: A display apparatus is disclosed that includes contact holes formed to expose at least a portion of a conductive layer or a semiconductor layer without damage to the surface of the conductive layer or the semiconductor layer, and a method of manufacturing the display apparatus. The display apparatus includes a substrate, a conductive mound arranged on the substrate, a first insulating mound arranged on the substrate, and a semiconductor layer including a first region arranged on the conductive mound, and a second region arranged on the first insulating mound. The second region of the semiconductor layer substantially covers an upper surface of the first insulating mound.

    Display apparatus
    7.
    发明授权
    Display apparatus 有权

    公开(公告)号：US11495650B2

    公开(公告)日：2022-11-08

    申请号：US17081342

    申请日：2020-10-27

    Applicant: Samsung Display Co., Ltd.

    Inventor： Kyungjin Jeon ,  Soyoung Koo ,  Eoksu Kim ,  Junhyung Lim

    IPC: H01L27/14 ,  H01L27/32 ,  H01L27/12 ,  H01L29/66 ,  H01L29/786 ,  H01L21/02

    Abstract: A display apparatus includes a thin film transistor facing a substrate with a buffer layer therebetween and including a semiconductor layer, a channel region, a source region, a drain region, and a gate electrode; a conductive pattern between the substrate and the semiconductor layer and connected to the semiconductor layer, the conductive pattern facing the semiconductor layer with the buffer layer therebetween; a contact hole in the buffer layer and exposing the conductive pattern to outside the buffer layer; and a display element which is electrically connected to the thin film transistor. The source region or the drain region extends through the contact hole in the buffer layer, to contact the conductive pattern and connect the semiconductor layer to the conductive pattern.

    Display device and method of manufacturing the same
    10.
    发明授权
    Display device and method of manufacturing the same 有权

    公开(公告)号：US12225771B2

    公开(公告)日：2025-02-11

    申请号：US17318350

    申请日：2021-05-12

    Applicant: Samsung Display Co., Ltd.

    Inventor： Hyungjun Kim ,  Soyoung Koo ,  Eok Su Kim ,  Yunyong Nam ,  Jun Hyung Lim ,  Kyungjin Jeon

    IPC: H10K59/121 ,  H10K59/126 ,  H10K71/00 ,  H10K59/12 ,  H10K59/123

    Abstract: A display device includes a first transistor including a first transistor including a light blocking pattern on a substrate, an active pattern on the light blocking pattern, and a gate electrode on the active pattern, a second transistor configured to provide a data voltage to the first transistor in response to a gate signal, and a storage capacitor electrically connected to the gate electrode and the light blocking pattern, and including a first conductive pattern in a same layer as the light blocking pattern, a second conductive pattern on the first conductive pattern and overlapping the first conductive pattern, a third conductive pattern in a same layer as the gate electrode, overlapping the second conductive pattern, and electrically connected to the first conductive pattern, and a fourth conductive pattern on the third conductive pattern, overlapping the third conductive pattern, and electrically connected to the second conductive pattern.

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