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公开(公告)号：US09570534B2
公开(公告)日：2017-02-14
申请号：US14946231
申请日：2015-11-19
发明人： Kyu-Sik Cho , Won-Kyu Lee , Tae-Hoon Yang , Byoung-Kwon Choo , Sang-Ho Moon , Bo-Kyung Choi , Yong-Hwan Park , Joon-Hoo Choi , Min-Chul Shin , Yun-Gyu Lee
CPC分类号： H01L27/3279 , H01L27/124 , H01L27/1248 , H01L27/3244 , H01L27/3262 , H01L27/3265
摘要： An organic light emitting diode display includes: a substrate including a first and a second gate electrode formed over a first and a second region, respectively, a first and a second gate insulator formed on the first and the second gate electrode, respectively, a first and a second semiconductor layer formed on the first and the second gate insulator, respectively, the first semiconductor layer including a first channel region, the second semiconductor layer including a second channel region, an interlayer insulator formed over the substrate and over at least part of the first and second semiconductor layers, a first and a second etching stop layer formed over the first and second channel regions, respectively, and surrounded by the interlayer insulator, and a first and a second source electrode and a first and a second drain electrode contacting the first and the second semiconductor layer, respectively, through the interlayer insulator.
摘要翻译： 一种有机发光二极管显示器包括：基板，分别包括形成在第一和第二区域上的第一和第二栅电极，分别形成在第一和第二栅电极上的第一和第二栅极绝缘体， 以及分别形成在所述第一和第二栅极绝缘体上的第二半导体层，所述第一半导体层分别包括第一沟道区，所述第二半导体层包括第二沟道区，在所述衬底上形成的层间绝缘体，以及至少部分 第一和第二半导体层，分别形成在第一和第二沟道区上并由层间绝缘体包围的第一和第二蚀刻停止层，以及第一和第二源电极和第一和第二漏电极接触 第一和第二半导体层分别通过层间绝缘体。
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2.发明授权公开(公告)号：US09391292B2
公开(公告)日：2016-07-12
申请号：US14505391
申请日：2014-10-02
发明人： Bo-Kyung Choi , Yun-Mo Chung , Jong-Ryuk Park , Jinwook Seo , Dong-Hyun Lee
CPC分类号： H01L51/5237 , H01L27/3244 , H01L27/3258 , H01L51/5209
摘要： A display device includes a substrate, a passivation layer on the substrate and including an area having a first thickness and an area having a second thickness less than the first thickness, a first electrode on the passivation layer and including at least two sub-electrodes spaced apart from each other by a slit having two ends, a light emitting layer on the first electrode, and a second electrode on the light emitting layer. Both ends of the slit are in one the area of the passivation layer having the second thickness.
摘要翻译： 显示装置包括衬底，衬底上的钝化层，并且包括具有第一厚度的区域和具有小于第一厚度的第二厚度的区域;钝化层上的第一电极，并且包括间隔开的至少两个子电极 通过具有两端的狭缝彼此分开，在第一电极上的发光层和发光层上的第二电极。 狭缝的两端位于具有第二厚度的钝化层的一个区域中。
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3.发明申请THIN FILM TRANSISTOR AND ORGANIC LIGHT EMITTING DIODE DISPLAY INCLUDING THE SAME 审中-公开薄膜晶体管和有机发光二极体显示器包括它公开(公告)号：US20140284558A1
公开(公告)日：2014-09-25
申请号：US13933057
申请日：2013-07-01
发明人： Tae-Hoon Yang , Bo-Kyung Choi , Jae-Wan Jung , Ki-Yong Lee
IPC分类号： H01L27/32
CPC分类号： H01L27/3262 , H01L29/41733 , H01L29/66757
摘要： A thin film transistor (TFT) includes a semiconductor on a substrate; an ohmic contact overlapping at least a portion of the semiconductor; a source electrode and a drain electrode on the ohmic contact; a gate insulating layer covering the semiconductor; and a gate electrode overlapping the semiconductor and between the source electrode and the drain electrode on the gate insulating layer, wherein the gate electrode is laterally separated from the drain electrode by a first distance and is laterally separated from the source electrode by a second distance.
摘要翻译： 薄膜晶体管（TFT）在衬底上包括半导体; 与所述半导体的至少一部分重叠的欧姆接触; 欧姆接触上的源电极和漏电极; 覆盖半导体的栅极绝缘层; 以及在所述栅极绝缘层上与所述半导体和所述源极电极和所述漏极电极重叠的栅电极，其中，所述栅电极与所述漏电极横向分开第一距离，并且与所述源极电极横向分离第二距离。
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公开(公告)号：US09691832B2
公开(公告)日：2017-06-27
申请号：US14880059
申请日：2015-10-09
发明人： Min-Chul Shin , Sung-Ho Kim , Jong-Moo Huh , Bo-Kyung Choi
CPC分类号： H01L27/3258 , H01L27/3246 , H01L27/3272 , H01L51/0014 , H01L51/56 , H01L2227/323
摘要： An organic light emitting display device, including a substrate, a first conductive layer pattern on the substrate, a first insulation layer pattern on the first conductive layer pattern, a first semiconductor layer pattern on the first insulation layer pattern, a gate insulation layer pattern on the gate insulation layer pattern, a gate electrode on the gate insulation layer pattern, a planarization layer on the gate electrode, the planarization layer including a first protruding portion protruded in a first direction perpendicular to an upper surface of the substrate, a lower electrode on the first protruding portion, a pixel defining layer exposing at least a portion of the lower electrode, the pixel defining layer covering opposite side portions of the first protruding portion, a light emitting layer on the lower electrode, and an upper electrode on the light emitting layer.
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公开(公告)号：US09070904B2
公开(公告)日：2015-06-30
申请号：US14193227
申请日：2014-02-28
发明人： Kyu-Sik Cho , Joon-Hoo Choi , Byoung-Kwon Choo , Min-Chul Shin , Tae-Hoon Yang , Won-Kyu Lee , Yun-Gyu Lee , Bo-Kyung Choi , Yong-Hwan Park , Sang-Ho Moon
CPC分类号： H01L51/56 , H01L27/1255 , H01L27/1288 , H01L27/3262 , H01L27/3265
摘要： An OLED display includes a first polysilicon layer pattern on a substrate having a first gate electrode, a second gate electrode, and a first capacitor electrode, a gate insulating layer pattern, a second polysilicon layer pattern including a first active layer, a second active layer, and a capacitor polycrystalline dummy layer, a third amorphous silicon layer pattern including first source and drain resistant contact layers on a predetermined region of the first active layer, second source and drain resistant contact layers on a predetermined region of the second active layer, and a capacitor amorphous dummy layer on the capacitor polycrystalline dummy layer, and a data metal layer pattern including first source/drain electrodes, second source/drain electrodes, and a second capacitor electrode.
摘要翻译： OLED显示器包括在具有第一栅电极，第二栅极和第一电容器电极的基板上的第一多晶硅层图案，栅极绝缘层图案，包括第一有源层的第二多晶硅层图案，第二有源层 以及电容器多晶虚拟层，在第一有源层的预定区域上包括第一源极和漏极接触层的第三非晶硅层图案，在第二有源层的预定区域上的第二源极和漏极接触层，以及 电容器多晶虚拟层上的电容器非晶虚拟层，以及包括第一源极/漏极，第二源极/漏极和第二电容器电极的数据金属层图案。
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公开(公告)号：US11551639B2
公开(公告)日：2023-01-10
申请号：US17143948
申请日：2021-01-07
发明人： Bo-Kyung Choi , Youngseok Kim , Han-Na Ma , Dong-Yeol Yeom
IPC分类号： G09G5/10 , G09G3/20 , G06V40/16 , H04N5/225 , G09G3/3208
摘要： A display device includes a display panel having a display region, and including a light transmission region overlapping an electronic element within an edge portion of the display region, and a panel driver configured to drive the display panel, and configured to perform an edge-dimming operation that gradually decreases a luminance of an area of the display region excluding the light transmission region from a center portion of the display region to the edge portion of the display region while not decreasing a luminance of the light transmission region.
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公开(公告)号：US10528162B2
公开(公告)日：2020-01-07
申请号：US14833575
申请日：2015-08-24
发明人： Bo-Kyung Choi , Jong-Moo Huh , Sung-Ho Kim , Min-Chul Shin
IPC分类号： G06F3/041 , H01L27/32 , G02F1/1333
摘要： A display device integrated with a sensor includes a first substrate and a second substrate disposed while facing each other, and having exposed ends at different sides thereof, a sealing material configured to seal an overlapping region between the first and second substrates, a display unit including a plurality of pixels provided in a sealed region inside the sealing material, a sensor electrode unit formed on the second substrate, a first pad unit formed in an exposed part of the first substrate, and a second pad unit formed in an exposed part of the second substrate.
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8.发明授权Method of fabricating polysilicon layer, thin film transistor, organic light emitting diode display device including the same, and method of fabricating the same 有权制造多晶硅层的方法，薄膜晶体管，包括其的有机发光二极管显示装置及其制造方法公开(公告)号：US09576797B2
公开(公告)日：2017-02-21
申请号：US14721621
申请日：2015-05-26
发明人： Dong-Hyun Lee , Ki-Yong Lee , Jin-Wook Seo , Tae-Hoon Yang , Yun-Mo Chung , Byoung-Keon Park , Kil-Won Lee , Jong-Ryuk Park , Bo-Kyung Choi , Byung-Soo So
IPC分类号： H01L21/02 , H01L29/786 , H01L29/66 , H01L27/12 , H01L21/477 , H01L27/32
CPC分类号： H01L21/02672 , H01L21/0206 , H01L21/02488 , H01L21/02491 , H01L21/02532 , H01L21/477 , H01L27/1277 , H01L27/3244 , H01L29/66757 , H01L29/78603 , H01L29/78675
摘要： A method of fabricating a polysilicon layer includes forming a buffer layer on a substrate, forming a metal catalyst layer on the buffer layer, diffusing a metal catalyst into the metal catalyst layer to the buffer layer, removing the metal catalyst layer, forming an amorphous silicon layer on the buffer layer, and annealing the substrate to crystallize the amorphous silicon layer into a polysilicon layer. The thin film transistor includes a substrate, a buffer layer disposed on the substrate, a semiconductor layer disposed on the buffer layer, a gate insulating layer disposed above the substrate and on the semiconductor layer, a gate electrode disposed on the gate insulating layer, a source electrode and a drain electrode both electrically connected to the semiconductor layer, and a metal silicide disposed between the buffer layer and the semiconductor layer.
摘要翻译： 制造多晶硅层的方法包括在基板上形成缓冲层，在缓冲层上形成金属催化剂层，将金属催化剂向金属催化剂层扩散至缓冲层，除去金属催化剂层，形成非晶硅 层，并且使基板退火以将非晶硅层结晶成多晶硅层。 薄膜晶体管包括基板，设置在基板上的缓冲层，设置在缓冲层上的半导体层，设置在基板上方和半导体层上的栅极绝缘层，设置在栅极绝缘层上的栅电极， 源极电极和漏电极，两者电连接到半导体层，以及设置在缓冲层和半导体层之间的金属硅化物。
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9.发明授权公开(公告)号：US09035311B2
公开(公告)日：2015-05-19
申请号：US13841121
申请日：2013-03-15
发明人： Byoung-Keon Park , Tae-Hoon Yang , Jin-Wook Seo , Soo-Beom Jo , Dong-Hyun Lee , Kil-Won Lee , Maxim Lisachenko , Yun-Mo Chung , Bo-Kyung Choi , Jong-Ryuk Park , Ki-Yong Lee
IPC分类号： H01L29/12 , H01L29/786 , H01L51/52 , H01L27/32
CPC分类号： H01L51/52 , H01L27/3265 , H01L2227/323
摘要： An organic light emitting diode (OLED) display device and a method of fabricating the same are provided. The OLED display device includes a substrate having a thin film transistor region and a capacitor region, a buffer layer disposed on the substrate, a gate insulating layer disposed on the substrate, a lower capacitor electrode disposed on the gate insulating layer in the capacitor region, an interlayer insulating layer disposed on the substrate, and an upper capacitor electrode disposed on the interlayer insulating layer and facing the lower capacitor electrode, wherein regions of each of the buffer layer, the gate insulating layer, the interlayer insulating layer, the lower capacitor electrode, and the upper capacitor electrode have surfaces in which protrusions having the same shape as grain boundaries of the semiconductor layer are formed. The resultant capacitor has an increased surface area, and therefore, an increased capacitance.
摘要翻译： 提供了一种有机发光二极管（OLED）显示装置及其制造方法。 OLED显示装置包括具有薄膜晶体管区域和电容器区域的基板，设置在基板上的缓冲层，设置在基板上的栅极绝缘层，设置在电容器区域的栅极绝缘层上的下部电容电极， 设置在所述基板上的层间绝缘层，以及设置在所述层间绝缘层上并面向所述下部电容电极的上部电容电极，其中，所述缓冲层，所述栅极绝缘层，所述层间绝缘层，所述下部电容电极 并且上部电容器电极具有形成具有与半导体层的晶界相同形状的突起的表面。 所得的电容器具有增加的表面积，因此增加电容。
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10.发明申请ORGANIC LIGHT EMITTING DISPLAY DEVICE AND METHOD OF MANUFACTURING ORGANIC LIGHT EMITTING DISPLAY DEVICE 有权有机发光显示装置及制造有机发光显示装置的方法公开(公告)号：US20160247865A1
公开(公告)日：2016-08-25
申请号：US14880059
申请日：2015-10-09
发明人： Min-Chul Shin , Sung-Ho Kim , Jong-Moo Huh , Bo-Kyung Choi
CPC分类号： H01L27/3258 , H01L27/3246 , H01L27/3272 , H01L51/0014 , H01L51/56 , H01L2227/323
摘要： An organic light emitting display device, including a substrate, a first conductive layer pattern on the substrate, a first insulation layer pattern on the first conductive layer pattern, a first semiconductor layer pattern on the first insulation layer pattern, a gate insulation layer pattern on the gate insulation layer pattern, a gate electrode on the gate insulation layer pattern, a planarization layer on the gate electrode, the planarization layer including a first protruding potion protruded in a first direction perpendicular to an upper surface of the substrate, a lower electrode on the first protruding portion, a pixel defining layer exposing at least a portion of the lower electrode, the pixel defining layer covering opposite side portions of the first protruding portion, a light emitting layer on the lower electrode, and an upper electrode on the light emitting layer.
摘要翻译： 一种有机发光显示装置，包括基板，基板上的第一导电层图案，第一导电层图案上的第一绝缘层图案，第一绝缘层图案上的第一半导体层图案，第一绝缘层图案上的栅极绝缘层图案 栅极绝缘层图案，栅极绝缘层图案上的栅电极，栅电极上的平坦化层，平坦化层包括在垂直于基板的上表面的第一方向上突出的第一突出部分，下电极 第一突出部分，暴露下部电极的至少一部分的像素限定层，覆盖第一突出部分的相对侧部分的像素限定层，下部电极上的发光层和发光的上部电极 层。
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