公开(公告)号：US09977324B2

公开(公告)日：2018-05-22

申请号：US15464228

申请日：2017-03-20

Applicant: Samsung Display Co., Ltd.

Inventor： DongEon Lee ,  Min Kang ,  Bong Yeon Kim ,  Yong Son ,  Junhyuk Woo ,  Hyunjoo Lee ,  Jinho Ju

IPC: G03F1/30 ,  G03F7/20 ,  G03F9/00

CPC classification number: G03F1/30 ,  G03F1/26 ,  G03F7/2002 ,  G03F7/2008 ,  G03F7/70191 ,  G03F7/70283 ,  G03F9/7003 ,  G03F9/7007

Abstract: A method of forming a pattern includes: preparing a target substrate including a photoresist layer on a base substrate; aligning a phase shift mask to the target substrate, the phase shift mask including a mask substrate comparted into a first region including a first sub region and second sub regions at sides of the first sub region, and second regions at sides of the first region, the phase shift mask including a phase shift layer on the mask substrate corresponding to the first region; fully exposing the photoresist layer at the first sub region and the second regions by utilizing the phase shift mask; and removing the photoresist layer at the first sub region and the second regions to form first and second photoresist patterns corresponding to the second sub regions. Transmittance of the phase shift layer is selected to fully expose the photoresist layer in the first sub region.

公开(公告)号：US20170192348A1

公开(公告)日：2017-07-06

申请号：US15464228

申请日：2017-03-20

Applicant: Samsung Display Co., Ltd.

Inventor： DongEon Lee ,  Min Kang ,  Bong Yeon Kim ,  Yong Son ,  Junhyuk Woo ,  Hyunjoo Lee ,  Jinho Ju

IPC: G03F1/30 ,  G03F9/00 ,  G03F7/20

CPC classification number: G03F1/30 ,  G03F1/26 ,  G03F7/2002 ,  G03F7/2008 ,  G03F7/70191 ,  G03F7/70283 ,  G03F9/7003 ,  G03F9/7007

Abstract: A method of forming a pattern includes: preparing a target substrate including a photoresist layer on a base substrate; aligning a phase shift mask to the target substrate, the phase shift mask including a mask substrate comparted into a first region including a first sub region and second sub regions at sides of the first sub region, and second regions at sides of the first region, the phase shift mask including a phase shift layer on the mask substrate corresponding to the first region; fully exposing the photoresist layer at the first sub region and the second regions by utilizing the phase shift mask; and removing the photoresist layer at the first sub region and the second regions to form first and second photoresist patterns corresponding to the second sub regions. Transmittance of the phase shift layer is selected to fully expose the photoresist layer in the first sub region.

公开(公告)号：US20150064857A1

公开(公告)日：2015-03-05

申请号：US14224284

申请日：2014-03-25

Applicant: SAMSUNG DISPLAY CO., LTD.

Inventor： MIN KANG ,  Hyunjoo Lee ,  Bong-Yeon Kim ,  DongEon Lee ,  Yong Son ,  Junhyuk Woo ,  Jinho Ju

IPC: G03F1/26 ,  H01L21/033 ,  H01L27/12

CPC classification number: G03F1/26 ,  G03F1/32 ,  H01L27/1288

Abstract: A mask for etching a target layer includes a mask substrate. A phase inversion layer is disposed to correspond to a non-etched area of a pattern target layer. The phase inversion layer is configured to generate inverted light by inverting a phase of incident light and to transmit the inverted light to the non-etched area of a pattern target layer. An inversion offset part is disposed in a center part of the phase inversion layer. The inversion offset part is configured to generate offset light causing destructive interference with the inverted light in the non-etched area and to provide the offset light to the non-etched area.

Abstract translation: 用于蚀刻目标层的掩模包括掩模基板。 相位反转层设置成对应于图案目标层的未蚀刻区域。 相位反转层被配置为通过反射入射光的相位并将反射的光传输到图案目标层的未蚀刻区域来产生反相光。 反转偏移部分设置在相位反转层的中心部分。 反转偏移部分被配置为产生偏移光，其对非蚀刻区域中的反射光产生相消干涉并且向非蚀刻区域提供偏移光。

公开(公告)号：US09632438B2

公开(公告)日：2017-04-25

申请号：US14604459

申请日：2015-01-23

Applicant: SAMSUNG DISPLAY CO., LTD.

Inventor： DongEon Lee ,  Min Kang ,  Bong Yeon Kim ,  Yong Son ,  Junhyuk Woo ,  Hyunjoo Lee ,  Jinho Ju

IPC: G03F1/26 ,  G03F7/20 ,  G03F9/00

CPC classification number: G03F1/30 ,  G03F1/26 ,  G03F7/2002 ,  G03F7/2008 ,  G03F7/70191 ,  G03F7/70283 ,  G03F9/7003 ,  G03F9/7007

Abstract: A method of forming a pattern includes: preparing a target substrate including a photoresist layer on a base substrate; aligning a phase shift mask to the target substrate, the phase shift mask including a mask substrate comparted into a first region including a first sub region and second sub regions at sides of the first sub region, and second regions at sides of the first region, the phase shift mask including a phase shift layer on the mask substrate corresponding to the first region; fully exposing the photoresist layer at the first sub region and the second regions by utilizing the phase shift mask; and removing the photoresist layer at the first sub region and the second regions to form first and second photoresist patterns corresponding to the second sub regions. Transmittance of the phase shift layer is selected to fully expose the photoresist layer in the first sub region.

公开(公告)号：US20150293438A1

公开(公告)日：2015-10-15

申请号：US14604459

申请日：2015-01-23

Applicant: SAMSUNG DISPLAY CO., LTD.

Inventor： DongEon Lee ,  Min Kang ,  Bong Yeon Kim ,  Yong Son ,  Junhyuk Woo ,  Hyunjoo Lee ,  Jinho Ju

IPC: G03F1/26

CPC classification number: G03F1/30 ,  G03F1/26 ,  G03F7/2002 ,  G03F7/2008 ,  G03F7/70191 ,  G03F7/70283 ,  G03F9/7003 ,  G03F9/7007

Abstract: A method of forming a pattern includes: preparing a target substrate including a photoresist layer on a base substrate; aligning a phase shift mask to the target substrate, the phase shift mask including a mask substrate comparted into a first region including a first sub region and second sub regions at sides of the first sub region, and second regions at sides of the first region, the phase shift mask including a phase shift layer on the mask substrate corresponding to the first region; fully exposing the photoresist layer at the first sub region and the second regions by utilizing the phase shift mask; and removing the photoresist layer at the first sub region and the second regions to form first and second photoresist patterns corresponding to the second sub regions. Transmittance of the phase shift layer is selected to fully expose the photoresist layer in the first sub region.

Abstract translation: 形成图案的方法包括：在基底基板上制备包括光致抗蚀剂层的目标基板; 将相移掩模对准目标衬底，所述相移掩模包括掩模衬底，所述掩模衬底分别包括在所述第一子区域的侧面处包括第一子区域和第二子区域的第一区域，以及所述第一区域的侧面处的第二区域， 所述相移掩模包括对应于所述第一区域的所述掩模基板上的相移层; 通过利用相移掩模使第一子区和第二区的光致抗蚀剂层完全曝光; 以及去除所述第一子区域和所述第二区域处的所述光致抗蚀剂层，以形成对应于所述第二子区域的第一和第二光致抗蚀剂图案。 选择相移层的透射率以完全暴露第一子区域中的光致抗蚀剂层。