公开(公告)号：US20210399074A1

公开(公告)日：2021-12-23

申请号：US17287936

申请日：2019-02-20

Applicant: Samsung Display Co., Ltd.

Inventor： Yeonkeon MOON ,  Joonseok PARK ,  Kwang-suk KIM ,  Myounghwa KIM ,  Taesang KIM ,  Geunchul PARK ,  Kyungjin JEON

IPC: H01L27/32 ,  H01L29/786

Abstract: A transistor substrate may include a substrate including a first region and a second region, a first buffer layer disposed in the first region on the substrate and including silicon nitride, a second buffer layer disposed in the first region and the second region on the first buffer layer and including silicon oxide, a first transistor disposed in the first region on the second buffer layer and including a first oxide semiconductor layer and a first gate electrode overlapping the first oxide semiconductor layer, and a second transistor disposed in the second region on the second buffer layer and including a second oxide semiconductor layer and a second gate electrode overlapping the second oxide semiconductor layer.

公开(公告)号：US20200220021A1

公开(公告)日：2020-07-09

申请号：US16819496

申请日：2020-03-16

Applicant: Samsung Display Co., Ltd.

Inventor： Joonseok PARK ,  Jihun LIM ,  Myounghwa KIM ,  Taesang KIM ,  Yeonkeon MOON

IPC: H01L29/786 ,  H01L29/24 ,  H01L23/532 ,  H01L27/32 ,  H01L29/08 ,  H01L29/10 ,  H01L29/417 ,  H01L29/423

Abstract: A thin film transistor includes an active layer over a substrate, a gate electrode over the active layer, a gate line connected with the gate electrode, and a gate insulation film between the active layer and the gate electrode. The active layer includes a channel region overlapping the gate electrode, and a drain region and a source region on respective sides of the channel region. A length of a straight line connecting the drain region and the source region by a shortest distance may be greater than a width of the gate line parallel to the straight line.

公开(公告)号：US20190341408A1

公开(公告)日：2019-11-07

申请号：US16515153

申请日：2019-07-18

Applicant: Samsung Display Co., Ltd.

Inventor： Jihun LIM ,  Jaybum KIM ,  Joonseok PARK ,  Kyoungseok SON ,  Junhyung LIM

IPC: H01L27/12 ,  H01L27/32 ,  H01L29/788 ,  H01L29/786 ,  H01L29/49

Abstract: A transistor includes a semiconductor layer comprising a channel portion, a first contact portion and a second contact portion, a gate electrode facing the floating gate, and a floating gate disposed between the semiconductor layer and the gate electrode, the floating gate being insulated from the semiconductor layer and the gate electrode. The floating gate comprises an oxide semiconductor.

公开(公告)号：US20220238720A1

公开(公告)日：2022-07-28

申请号：US17722611

申请日：2022-04-18

Applicant: Samsung Display Co., Ltd.

Inventor： Joonseok PARK ,  Jihun LIM ,  Myounghwa KIM ,  Taesang KIM ,  Yeonkeon MOON

IPC: H01L29/786 ,  H01L29/24 ,  H01L23/532 ,  H01L27/32 ,  H01L29/08 ,  H01L29/10 ,  H01L29/417 ,  H01L29/423

Abstract: A thin film transistor includes an active layer over a substrate, a gate electrode over the active layer, a gate line connected with the gate electrode, and a gate insulation film between the active layer and the gate electrode. The active layer includes a channel region overlapping the gate electrode, and a drain region and a source region on respective sides of the channel region. A length of a straight line connecting the drain region and the source region by a shortest distance may be greater than a width of the gate line parallel to the straight line.

公开(公告)号：US20210408292A1

公开(公告)日：2021-12-30

申请号：US17158824

申请日：2021-01-26

Applicant: Samsung Display Co., Ltd.

Inventor： Sangwoo SOHN ,  Yeonkeon MOON ,  Myounghwa KIM ,  Taesang KIM ,  Geunchul PARK ,  Joonseok PARK ,  Junhyung LIM ,  Hyelim CHOI

IPC: H01L29/786 ,  H01L29/24 ,  H01L27/32

Abstract: A thin-film transistor substrate includes: an active layer on a substrate, the active layer including: a first semiconductor material layer; a conductor layer on the first semiconductor material layer, and including a metal element; and a second semiconductor material layer on the conductor layer; a gate insulating layer on the active layer; and a gate electrode on the gate insulating layer, and at least partially overlapping with the active layer.

公开(公告)号：US20180076238A1

公开(公告)日：2018-03-15

申请号：US15657508

申请日：2017-07-24

Applicant: Samsung Display Co., Ltd.

Inventor： Jihun LIM ,  Jaybum KIM ,  Joonseok PARK ,  Kyoungseok SON ,  Junhyung LIM

IPC: H01L27/12 ,  H01L29/788 ,  H01L29/49 ,  H01L29/786

CPC classification number: H01L27/1251 ,  G02F1/136213 ,  G02F1/1368 ,  G02F2201/121 ,  G02F2201/123 ,  G02F2202/10 ,  H01L27/1225 ,  H01L27/1237 ,  H01L27/124 ,  H01L27/1255 ,  H01L27/1262 ,  H01L27/3244 ,  H01L27/3248 ,  H01L27/3262 ,  H01L27/3265 ,  H01L27/3276 ,  H01L29/4908 ,  H01L29/66757 ,  H01L29/66825 ,  H01L29/66969 ,  H01L29/78609 ,  H01L29/78675 ,  H01L29/7869 ,  H01L29/788 ,  H01L2227/323

Abstract: A transistor includes a semiconductor layer comprising a channel portion, a first contact portion and a second contact portion, a gate electrode facing the floating gate, and a floating gate disposed between the semiconductor layer and the gate electrode, the floating gate being insulated from the semiconductor layer and the gate electrode. The floating gate comprises an oxide semiconductor.

公开(公告)号：US20210391406A1

公开(公告)日：2021-12-16

申请号：US17152249

申请日：2021-01-19

Applicant: Samsung Display Co., Ltd.

Inventor： Hyelim CHOI ,  Joonseok PARK ,  Myounghwa KIM ,  Taesang KIM ,  Yeonkeon MOON ,  Geunchul PARK ,  Sangwoo SOHN ,  Junhyung LIM

IPC: H01L27/32

Abstract: A display device includes: a substrate including a first region and a second region; a first active layer located on the first region and including a first channel region, a first source region at one side of the first channel region, a first drain region at the other side of the first channel region, and a first extension region extending in a direction from the first source region to the second region; a first gate electrode located above the first active layer and overlapping the first channel region; a driving voltage line located on the first active layer, overlapping the first source region, and extending along the first extension region; a first connection electrode located on the first drain region; and a pixel electrode located above the first gate electrode and connected to the first connection electrode.

公开(公告)号：US20190074377A1

公开(公告)日：2019-03-07

申请号：US16108454

申请日：2018-08-22

Applicant: SAMSUNG DISPLAY CO., LTD.

Inventor： Joonseok PARK ,  Jihun LIM ,  Myounghwa KIM ,  Taesang KIM ,  Yeonkeon MOON

IPC: H01L29/786 ,  H01L29/08 ,  H01L29/10 ,  H01L29/417 ,  H01L29/423 ,  H01L23/532 ,  H01L27/32

Abstract: A thin film transistor includes an active layer over a substrate, a gate electrode over the active layer, a gate line connected with the gate electrode, and a gate insulation film between the active layer and the gate electrode. The active layer includes a channel region overlapping the gate electrode, and a drain region and a source region on respective sides of the channel region. A length of a straight line connecting the drain region and the source region by a shortest distance may be greater than a width of the gate line parallel to the straight line.