公开(公告)号：US11968876B2

公开(公告)日：2024-04-23

申请号：US17283714

申请日：2019-02-01

Applicant: Samsung Display Co., Ltd.

Inventor： Kyungjin Jeon ,  Joon-seok Park ,  Kwang-suk Kim ,  Taesang Kim ,  Yeon-keon Moon ,  Geunchul Park ,  Jun-hyung Lim

IPC: H10K59/38 ,  H10K50/844 ,  H10K50/86 ,  H10K59/121 ,  H10K59/126 ,  H01L27/12 ,  H01L29/786

CPC classification number: H10K59/38 ,  H10K50/844 ,  H10K50/865 ,  H10K59/1213 ,  H10K59/126 ,  H01L27/1225 ,  H01L29/78633 ,  H01L29/7869

Abstract: A display device includes a base substrate including a first sub-pixel area, a second sub-pixel area, and a third sub-pixel area, first to third thin film transistors on the base substrate and including first to third active patterns, respectively, first to third pixel electrodes electrically connected to the first to third thin film transistors, respectively and in the first to third sub-pixel areas, respectively, a blue light emitting layer on the first to third pixel electrodes and configured to emit a blue light, a first color conversion pattern in the first sub-pixel area on the blue light emitting layer, a second color conversion pattern in the second sub-pixel area on the blue light emitting layer, and a red color filter layer between the blue light emitting layer and the first to third active patterns.

公开(公告)号：US12022710B2

公开(公告)日：2024-06-25

申请号：US17414355

申请日：2019-03-06

Applicant: Samsung Display Co., Ltd.

Inventor： Seunghun Lee ,  Myounghwa Kim ,  Jaybum Kim ,  Kyoung-seok Son ,  Seungjun Lee ,  Jun-hyung Lim

IPC: H10K59/131 ,  H10K71/00 ,  H10K50/844 ,  H10K59/12 ,  H10K77/10 ,  H10K102/00

CPC classification number: H10K59/1315 ,  H10K71/00 ,  H10K50/844 ,  H10K59/1201 ,  H10K77/111 ,  H10K2102/311

Abstract: An organic light emitting display device includes a substrate including a light emitting region, a first active layer having a source region and a drain region disposed in the light emitting region on the substrate, a gate insulation layer disposed on the first active layer, a first gate electrode disposed on the gate insulation layer, a first insulating interlayer disposed on the first gate electrode, a second insulating interlayer disposed on the first insulating interlayer, a first source electrode disposed on the second insulating interlayer, the first source electrode being connected to the source region of the first active layer through a contact hole formed in the gate insulation layer, the first insulating interlayer, and the second insulating interlayer, a protective insulating layer disposed on the first source electrode, a first drain electrode disposed on the protective insulating layer, the first drain electrode being connected to the drain region of the first active layer through a contact hole formed in the gate insulation layer, the first insulating interlayer, and the protective insulating layer, the first drain electrode constituting a driving transistor together with the first active layer, the first gate electrode, and the first source electrode, a switching transistor disposed in the second region between the substrate and the protective insulating layer, a lower electrode disposed on the switching transistor and the driving transistor, a light emitting layer disposed on the lower electrode, and an upper electrode disposed on the light emitting layer.