Display device and method of manufacturing the display device

    公开(公告)号:US12262598B2

    公开(公告)日:2025-03-25

    申请号:US18378656

    申请日:2023-10-11

    Abstract: A display device is disclosed that includes: a substrate comprising a display area and a component area including a transmission area; a first thin-film transistor comprising a first semiconductor layer and a first gate electrode, the first semiconductor layer including a silicon semiconductor; a first insulating layer covering the first gate electrode; a second thin-film transistor comprising a second semiconductor layer arranged on the first insulating layer and a second gate electrode, the second semiconductor layer including an oxide semiconductor; a second insulating layer covering the second gate electrode and having a transmission hole overlapping the transmission area; an intermediate insulating layer between the first insulating layer and the second insulating layer; a conductive pattern between the intermediate insulating layer and the first insulating layer; and a display element arranged on the second insulating layer, wherein the transmission hole exposes an upper surface of the intermediate insulating layer.

    Display panel
    2.
    发明授权

    公开(公告)号:US12183286B2

    公开(公告)日:2024-12-31

    申请号:US18482453

    申请日:2023-10-06

    Abstract: Provided is a display panel including a light-emitting element, and a pixel circuit electrically connected to the light-emitting element, and including a driving unit electrically connected to the light-emitting element, the driving unit including a first transistor including a first bottom electrode for receiving a first voltage, and a first semiconductor pattern including an oxide semiconductor above the first bottom electrode, and at least one diode including a second bottom electrode for receiving a second voltage at a same layer as the first bottom electrode, and a second semiconductor pattern above the second bottom electrode, at a same layer as the first semiconductor pattern, including an oxide semiconductor, and integrated with the first semiconductor pattern.

    DISPLAY DEVICE AND METHOD OF MANUFACTURING THE DISPLAY DEVICE

    公开(公告)号:US20220199720A1

    公开(公告)日:2022-06-23

    申请号:US17353640

    申请日:2021-06-21

    Abstract: A display device is disclosed that includes: a substrate comprising a display area and a component area including a transmission area; a first thin-film transistor comprising a first semiconductor layer and a first gate electrode, the first semiconductor layer including a silicon semiconductor; a first insulating layer covering the first gate electrode; a second thin-film transistor comprising a second semiconductor layer arranged on the first insulating layer and a second gate electrode, the second semiconductor layer including an oxide semiconductor; a second insulating layer covering the second gate electrode and having a transmission hole overlapping the transmission area; an intermediate insulating layer between the first insulating layer and the second insulating layer; a conductive pattern between the intermediate insulating layer and the first insulating layer; and a display element arranged on the second insulating layer, wherein the transmission hole exposes an upper surface of the intermediate insulating layer.

    DISPLAY APPARATUS AND METHOD OF MANUFACTURING THE SAME

    公开(公告)号:US20240224619A1

    公开(公告)日:2024-07-04

    申请号:US18506623

    申请日:2023-11-10

    CPC classification number: H10K59/123 H10K59/1201 H10K59/131 H10K2102/311

    Abstract: A display apparatus includes a substrate having a display area in which display elements are arranged, a first thin-film transistor in the display area and including a first semiconductor layer and a first gate electrode, the first semiconductor layer including an oxide semiconductor and the first gate electrode being insulated from the first semiconductor layer, and a first interlayer insulating layer between the first semiconductor layer and the first gate electrode, wherein the first interlayer insulating layer on the first semiconductor layer has a first length in a first direction, wherein the first gate electrode on the first interlayer insulating layer has a second length in the first direction, and wherein the first length is greater than the second length.

    Organic light emitting display device

    公开(公告)号:US12022710B2

    公开(公告)日:2024-06-25

    申请号:US17414355

    申请日:2019-03-06

    Abstract: An organic light emitting display device includes a substrate including a light emitting region, a first active layer having a source region and a drain region disposed in the light emitting region on the substrate, a gate insulation layer disposed on the first active layer, a first gate electrode disposed on the gate insulation layer, a first insulating interlayer disposed on the first gate electrode, a second insulating interlayer disposed on the first insulating interlayer, a first source electrode disposed on the second insulating interlayer, the first source electrode being connected to the source region of the first active layer through a contact hole formed in the gate insulation layer, the first insulating interlayer, and the second insulating interlayer, a protective insulating layer disposed on the first source electrode, a first drain electrode disposed on the protective insulating layer, the first drain electrode being connected to the drain region of the first active layer through a contact hole formed in the gate insulation layer, the first insulating interlayer, and the protective insulating layer, the first drain electrode constituting a driving transistor together with the first active layer, the first gate electrode, and the first source electrode, a switching transistor disposed in the second region between the substrate and the protective insulating layer, a lower electrode disposed on the switching transistor and the driving transistor, a light emitting layer disposed on the lower electrode, and an upper electrode disposed on the light emitting layer.

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