公开(公告)号：US20160097972A1

公开(公告)日：2016-04-07

申请号：US14794079

申请日：2015-07-08

Applicant: SAMSUNG DISPLAY CO., LTD.

Inventor： Bongyeon KIM ,  Min KANG ,  Yong SON ,  Hyunjoo LEE ,  Myounggeun CHA ,  Jinho JU

IPC: G03F1/26 ,  G03F7/20

CPC classification number: H01L21/0268 ,  G03F1/30 ,  G03F7/0043 ,  G03F7/20 ,  H01L21/02532 ,  H01L21/02678

Abstract: Provided is a method of manufacturing a display apparatus, the method including forming an amorphous silicon layer on a substrate; changing amorphous silicon in the amorphous silicon layer into crystalline silicon by irradiating the amorphous silicon with a laser beam emitted through a phase shift mask; and forming a display device, the phase shift mask including a base substrate; a barrier layer on the base substrate and including a plurality of transmissive portions which are spaced apart from each other in a first direction; and phase shift portions which alternately fill the plurality of transmissive portions in the first direction.

Abstract translation: 提供一种制造显示装置的方法，所述方法包括在基板上形成非晶硅层; 通过用通过相移掩模发射的激光束照射非晶硅，将非晶硅层中的非晶硅变成晶体硅; 以及形成显示装置，所述相移掩模包括基底基板; 在所述基底基板上的阻挡层，并且包括在第一方向上彼此间隔开的多个透射部; 以及在第一方向交替地填充多个透射部的相移部。

公开(公告)号：US20160035754A1

公开(公告)日：2016-02-04

申请号：US14585525

申请日：2014-12-30

Applicant: SAMSUNG DISPLAY CO., LTD.

Inventor： Dongjo KIM ,  Myounggeun CHA ,  Yoonho KHANG ,  Soyoung KOO

IPC: H01L27/12 ,  H01L21/02 ,  H01L27/32 ,  H01L29/786

CPC classification number: H01L27/1218 ,  H01L21/02422 ,  H01L21/02488 ,  H01L21/02494 ,  H01L21/02502 ,  H01L21/02532 ,  H01L21/02686 ,  H01L27/1222 ,  H01L29/66757 ,  H01L29/66772 ,  H01L29/78603 ,  H01L29/78654 ,  H01L29/78675

Abstract: Provided is a semiconductor device including a buffer layer that is on a substrate and includes an inclined surface; a crystalline silicon layer that is on the buffer layer; a gate electrode that is on the crystalline silicon layer while being insulated from the crystalline silicon layer; and a source electrode and a drain electrode that are each electrically connected to the crystalline silicon layer, the angle between the substrate and the inclined surface being in a range of about 17.5 degrees to less than about 70 degrees.

Abstract translation: 本发明提供一种半导体器件，其包括在衬底上并包括倾斜表面的缓冲层; 位于缓冲层上的晶体硅层; 位于结晶硅层上同时与晶体硅层绝缘的栅电极; 以及源极电极和漏极电极，其电连接到晶体硅层，基板和倾斜表面之间的角度在约17.5度至小于约70度的范围内。

公开(公告)号：US20200212126A1

公开(公告)日：2020-07-02

申请号：US16708894

申请日：2019-12-10

Applicant: Samsung Display Co., Ltd.

Inventor： Heena KIM ,  Myounggeun CHA ,  Sang Jin PARK ,  Young Seok BAEK

IPC: H01L27/32 ,  H01L51/52

Abstract: An organic light emitting diode display device includes a substrate, a buffer layer, a first circuit structure, a sub-pixel structure, and a first signal wire. The substrate includes a display region including a plurality of sub-pixel regions and a peripheral region surrounding the display region. The buffer layer is disposed in the display region and peripheral region on the substrate. The first circuit structure is disposed in the peripheral region on the buffer layer. The sub-pixel structure is disposed in each of the sub-pixel regions on the first circuit structure. The first signal wire is disposed in the peripheral region between the substrate and the buffer layer, and overlaps the first circuit structure when viewed from a plan view in a thickness direction of the substrate.

公开(公告)号：US20200083311A1

公开(公告)日：2020-03-12

申请号：US16510614

申请日：2019-07-12

Applicant: Samsung Display Co., Ltd.

Inventor： Myounggeun CHA ,  Yongsu LEE ,  Sanggun CHOI ,  Jiyeong SHIN

IPC: H01L27/32 ,  H01L51/00

Abstract: A display apparatus has a display area and a non-display area around the display area, the display apparatus includes, in the non-display area, a first power line, a driving circuit on a layer over the first power line, and a second power line electrically connected to the first power line and on a same layer on which one electrode of the driving circuit is arranged.

公开(公告)号：US20210312865A1

公开(公告)日：2021-10-07

申请号：US17264703

申请日：2019-03-29

Applicant: Samsung Display Co., Ltd.

Inventor： Myounggeun CHA ,  Sanggun CHOI ,  Jiyeong SHIN ,  Yongsu LEE

IPC: G09G3/3258 ,  G09G3/3233

Abstract: A display device may include a substrate, an organic light emitting element on the substrate, a pixel circuit between the substrate and the organic light emitting element, electrically connected to the organic light emitting element, and including a first transistor and a second transistor, a first metal layer between the substrate and the pixel circuit, overlapping the first transistor, and configured to receive a first voltage, and a second metal layer between the substrate and the pixel circuit, overlapping the second transistor, and configured to receive a second voltage different from the first voltage.

公开(公告)号：US20210296407A1

公开(公告)日：2021-09-23

申请号：US17337818

申请日：2021-06-03

Applicant: Samsung Display Co., Ltd.

Inventor： Heena KIM ,  Myounggeun CHA ,  Sang Jin PARK ,  Young Seok BAEK

IPC: H01L27/32 ,  H01L51/52

Abstract: An organic light emitting diode display device includes a substrate, a buffer layer, a first circuit structure, a sub-pixel structure, and a first signal wire. The substrate includes a display region including a plurality of sub-pixel regions and a peripheral region surrounding the display region. The buffer layer is disposed in the display region and peripheral region on the substrate. The first circuit structure is disposed in the peripheral region on the buffer layer. The sub-pixel structure is disposed in each of the sub-pixel regions on the first circuit structure. The first signal wire is disposed in the peripheral region between the substrate and the buffer layer, and overlaps the first circuit structure when viewed from a plan view in a thickness direction of the substrate.

公开(公告)号：US20190181360A1

公开(公告)日：2019-06-13

申请号：US16202595

申请日：2018-11-28

Applicant: Samsung Display Co., Ltd.

Inventor： Myounggeun CHA ,  Sanggun CHOI ,  Meejae KANG ,  Sanggab KIM ,  Joon woo BAE ,  Thanh Tien NGUYEN ,  Kyoungwon LEE ,  Yongsu LEE

IPC: H01L51/00 ,  H01L27/32 ,  H01L51/52 ,  H01L51/50 ,  H01L51/56

Abstract: A display substrate includes a first conductive layer on a base substrate, a first insulation layer on the first conductive layer, a second conductive layer on the first insulation layer, a second insulation layer on the second conductive layer, and a third conductive layer on the second insulation layer. The third conductive layer is connected to the first conductive layer and the second conductive layer through a contact hole passing through the first insulation layer, the second conductive layer, and the second insulation layer. A sidewall of the contact hole has a stepped shape.

公开(公告)号：US20170084755A1

公开(公告)日：2017-03-23

申请号：US15367568

申请日：2016-12-02

Applicant: SAMSUNG DISPLAY CO., LTD.

Inventor： Jongchan LEE ,  Yoonho KHANG ,  Myounghwa KIM ,  Joonhwa BAE ,  Myounggeun CHA

IPC: H01L29/786 ,  H01L29/66 ,  H01L21/02 ,  H01L21/3205 ,  H01L29/45 ,  H01L27/12

CPC classification number: H01L21/823418 ,  H01L21/02422 ,  H01L21/02488 ,  H01L21/02532 ,  H01L21/02592 ,  H01L21/02667 ,  H01L21/02672 ,  H01L21/28518 ,  H01L21/32053 ,  H01L27/1222 ,  H01L27/1274 ,  H01L27/1277 ,  H01L27/3262 ,  H01L29/41733 ,  H01L29/458 ,  H01L29/66765 ,  H01L29/78618 ,  H01L29/78678

Abstract: A thin film transistor includes a polysilicon layer on a substrate, which includes a first area between second and third areas. A polysilicon layer is formed on the substrate, and a source electrode and a drain electrode are formed on the polysilicon layer in the first and third areas. Each of the source electrode and the drain electrode includes a metal silicide layer adjacent the polysilicon layer.

公开(公告)号：US20160093646A1

公开(公告)日：2016-03-31

申请号：US14689927

申请日：2015-04-17

Applicant: SAMSUNG DISPLAY CO., LTD.

Inventor： Myounggeun CHA ,  Dongjo KIM ,  Yoonho KHANG ,  Myounghwa KIM ,  Kyoungwon LEE

IPC: H01L27/12 ,  H01L29/66 ,  H01L29/786

CPC classification number: H01L27/1255 ,  H01L27/1274 ,  H01L29/66757 ,  H01L29/66765 ,  H01L29/78645 ,  H01L29/78648 ,  H01L29/78675 ,  H01L29/78678

Abstract: A thin film transistor (TFT) substrate, a flat display apparatus including the TFT substrate, a method of manufacturing the TFT substrate, and a method of manufacturing the flat display apparatus, the thin film transistor (TFT) substrate including a substrate; a first gate electrode on the substrate, the first gate electrode including a first branch electrode and a second branch electrode that are spaced apart from one another; a polysilicon layer on the first gate electrode and insulated from the first gate electrode; and a second gate electrode on the polysilicon layer, the second gate electrode being insulated from the polysilicon layer and overlying the first and second branch electrodes.

Abstract translation: 薄膜晶体管（TFT）基板，包括TFT基板的平面显示装置，TFT基板的制造方法以及制造平面显示装置的方法，所述薄膜晶体管（TFT）基板包括基板; 在所述基板上的第一栅电极，所述第一栅极包括彼此间隔开的第一分支电极和第二分支电极; 在所述第一栅电极上并与所述第一栅电极绝缘的多晶硅层; 以及在所述多晶硅层上的第二栅电极，所述第二栅电极与所述多晶硅层绝缘并且覆盖所述第一和第二分支电极。

公开(公告)号：US20160042959A1

公开(公告)日：2016-02-11

申请号：US14597563

申请日：2015-01-15

Applicant: SAMSUNG DISPLAY CO., LTD.

Inventor： Jongchan LEE ,  Yoonho KHANG ,  Myounghwa KIM ,  Joonhwa BAE ,  Myounggeun CHA

IPC: H01L21/285 ,  H01L21/02 ,  H01L29/417 ,  H01L29/66 ,  H01L29/786 ,  H01L29/45

CPC classification number: H01L21/823418 ,  H01L21/02422 ,  H01L21/02488 ,  H01L21/02532 ,  H01L21/02592 ,  H01L21/02667 ,  H01L21/02672 ,  H01L21/28518 ,  H01L21/32053 ,  H01L27/1222 ,  H01L27/1274 ,  H01L27/1277 ,  H01L27/3262 ,  H01L29/41733 ,  H01L29/458 ,  H01L29/66765 ,  H01L29/78618 ,  H01L29/78678

Abstract: A thin film transistor includes a polysilicon layer on a substrate, which includes a first area between second and third areas. A polysilicon layer is formed on the substrate, and a source electrode and a drain electrode are formed on the polysilicon layer in the first and third areas. Each of the source electrode and the drain electrode includes a metal silicide layer adjacent the polysilicon layer.

Abstract translation: 薄膜晶体管包括在基板上的多晶硅层，其包括第二和第三区域之间的第一区域。 在基板上形成多晶硅层，在第一和第三区域的多晶硅层上形成源电极和漏电极。 源电极和漏电极中的每一个包括与多晶硅层相邻的金属硅化物层。