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公开(公告)号：US11661547B2
公开(公告)日：2023-05-30
申请号：US16883989
申请日：2020-05-26
发明人： Shin Ae Jun , Taekhoon Kim , Garam Park , Yong Seok Han , Eun Joo Jang , Hyo Sook Jang , Tae Won Jeong , Shang Hyeun Park
IPC分类号： C09K11/62 , C09K11/70 , C09K11/08 , C09K11/88 , C09K11/56 , C09K11/02 , C08K3/32 , C08K3/30 , G02F1/1335 , G02F1/13357 , B82Y40/00 , B82Y20/00 , B82Y30/00
CPC分类号： C09K11/025 , C08K3/30 , C08K3/32 , C09K11/703 , C09K11/883 , G02F1/133516 , G02F1/133617 , B82Y20/00 , B82Y30/00 , B82Y40/00 , C08K2201/001 , G02F2202/36 , Y10S977/774 , Y10S977/896 , Y10S977/95
摘要： A quantum dot, including a core including a first semiconductor material that includes indium; and a shell including a second semiconductor material, and disposed on the core, wherein the first semiconductor material and the second semiconductor material are different, wherein the shell has at least two branch portions and a valley portion connecting the at least two branch portions, at least one of the at least two branch portions comprises Zn, Se, and S, and a content of sulfur in the at least one branch portion increases in a direction away from the core.
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公开(公告)号：US11613699B2
公开(公告)日：2023-03-28
申请号：US16918316
申请日：2020-07-01
发明人： Nayoun Won , Garam Park , Shin Ae Jun , Tae Gon Kim , Taekhoon Kim , Shang Hyeun Park , Mi Hye Lim
IPC分类号： H01L51/50 , C09K11/88 , C09K11/08 , C09K11/02 , C09D5/22 , C09D4/06 , C09D7/65 , C09D135/02 , C09D7/45 , H01L27/32 , B82Y20/00 , B82Y40/00
摘要： A quantum dot including a core including a semiconductor nanocrystal including a Group III-V compound; and a first semiconductor nanocrystal shell disposed on the semiconductor nanocrystal core, the first semiconductor nanocrystal shell including zinc, selenium, and optionally sulfur, and a second semiconductor nanocrystal shell disposed on the first semiconductor nanocrystal shell, the second semiconductor nanocrystal shell including zinc, sulfur, and optionally selenium, wherein the quantum dot does not include cadmium, an emission peak wavelength of the quantum dot is in a range of about 500 nanometers (nm) to about 550 nm, and an ultraviolet-visible absorption spectrum of the quantum dot includes a first exciton absorption peak and a second exciton absorption peak, a composition including the same, a composite, and an electronic device.
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公开(公告)号：US11959003B2
公开(公告)日：2024-04-16
申请号：US18108708
申请日：2023-02-13
发明人： Nayoun Won , Garam Park , Shin Ae Jun , Tae Gon Kim , Taekhoon Kim , Shang Hyeun Park , Mi Hye Lim
IPC分类号： C09K11/88 , C09D4/06 , C09D5/22 , C09D7/45 , C09D7/65 , C09D135/02 , C09K11/02 , C09K11/08 , B82Y20/00 , B82Y40/00 , H10K50/115 , H10K59/38
CPC分类号： C09K11/883 , C09D4/06 , C09D5/22 , C09D7/45 , C09D7/65 , C09D135/02 , C09K11/02 , C09K11/0883 , B82Y20/00 , B82Y40/00 , H10K50/115 , H10K59/38
摘要： A quantum dot including a core including a semiconductor nanocrystal including a Group III-V compound; and a first semiconductor nanocrystal shell disposed on the semiconductor nanocrystal core, the first semiconductor nanocrystal shell including zinc, selenium, and optionally sulfur, and a second semiconductor nanocrystal shell disposed on the first semiconductor nanocrystal shell, the second semiconductor nanocrystal shell including zinc, sulfur, and optionally selenium, wherein the quantum dot does not include cadmium, an emission peak wavelength of the quantum dot is in a range of about 500 nanometers (nm) to about 550 nm, and an ultraviolet-visible absorption spectrum of the quantum dot includes a first exciton absorption peak and a second exciton absorption peak, a composition including the same, a composite, and an electronic device.
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公开(公告)号：US11866630B2
公开(公告)日：2024-01-09
申请号：US18083722
申请日：2022-12-19
发明人： Taekhoon Kim , Shin Ae Jun , Yong Wook Kim , Tae Gon Kim , Garam Park
CPC分类号： C09K11/883 , C09K11/025 , C09K11/0883 , H10K59/38 , B82Y20/00 , B82Y40/00 , G02F1/133617
摘要： A quantum dot including a core including a first semiconductor nanocrystal including a Group III-V compound; and a semiconductor nanocrystal shell disposed on the core, the semiconductor nanocrystal shell including zinc, tellurium, and selenium, wherein the quantum dot does not include cadmium, and the semiconductor nanocrystal shell has a mole ratio of tellurium to selenium of less than about 0.025:1, a composition including the quantum dot, a quantum dot-polymer composite, a patterned layer including the composite, and an electronic device including the patterned layer.
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公开(公告)号：US11530354B2
公开(公告)日：2022-12-20
申请号：US16950994
申请日：2020-11-18
发明人： Taekhoon Kim , Shin Ae Jun , Yong Wook Kim , Tae Gon Kim , Garam Park
摘要： A quantum dot including a core including a first semiconductor nanocrystal including a Group III-V compound; and a semiconductor nanocrystal shell disposed on the core, the semiconductor nanocrystal shell including zinc, tellurium, and selenium, wherein the quantum dot does not include cadmium, and the semiconductor nanocrystal shell has a mole ratio of tellurium to selenium of less than about 0.025:1, a composition including the quantum dot, a quantum dot-polymer composite, a patterned layer including the composite, and an electronic device including the patterned layer.
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公开(公告)号：US11332666B2
公开(公告)日：2022-05-17
申请号：US17036068
申请日：2020-09-29
发明人： Jooyeon Ahn , Jongmin Lee , Taekhoon Kim , Shin Ae Jun , Tae Gon Kim , Garam Park
IPC分类号： C09K11/88 , C09K11/02 , H01L51/50 , C01G9/08 , C01B19/00 , C01G9/00 , C09K11/70 , C09K11/74 , H01L33/50 , B82Y30/00 , B82Y40/00 , B82Y20/00
摘要： A quantum dot including a nanoparticle template including a first semiconductor nanocrystal including a Group II-VI compound, a quantum well including a second semiconductor nanocrystal disposed on the nanoparticle template, the second semiconductor nanocrystal including a Group IIIA metal excluding aluminum and a Group V element; and a shell comprising a third semiconductor nanocrystal disposed on the quantum well, the third semiconductor nanocrystal including a Group II-VI compound, wherein the quantum dot does not include cadmium, a band gap energy of the second semiconductor nanocrystal is less than a band gap energy of the first semiconductor nanocrystal, the band gap energy of the second semiconductor nanocrystal is less than a band gap energy of the third semiconductor nanocrystal, and the quantum dot includes an additional metal including an alkali metal, an alkaline earth metal, aluminum, iron, cobalt, nickel, copper, zinc, or a combination thereof.
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公开(公告)号：US10808174B2
公开(公告)日：2020-10-20
申请号：US15855436
申请日：2017-12-27
发明人： Young Seok Park , Shang Hyeun Park , Eun Joo Jang , Hyo Sook Jang , Shin Ae Jun , Dae Young Chung , Taekhoon Kim , Yuho Won
IPC分类号： C09K11/88 , C09K11/02 , H01L51/00 , G02B5/22 , H01L27/32 , B82Y40/00 , H01L51/50 , B82Y30/00
摘要： A process for preparing a quantum dot of a core-shell structure including obtaining a first mixture including first precursor including a first metal, a ligand compound, and a solvent; adding a second precursor and a particle including a first semiconductor nanocrystal to the first mixture to obtain a second mixture; and heating the second mixture up to a reaction temperature and performing a reaction between the first precursor and the second precursor to form a layer of a shell including a crystalline or amorphous material, during formation of the layer of the shell or after formation of the layer of the shell, wherein the process includes adding an organic solution including an ammonium fluorinated salt including a solid salt having a melting point of greater than or equal to about 110° C. to the second mixture.
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