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公开(公告)号：US11866630B2
公开(公告)日：2024-01-09
申请号：US18083722
申请日：2022-12-19
Applicant: Samsung Display Co., Ltd.
Inventor： Taekhoon Kim , Shin Ae Jun , Yong Wook Kim , Tae Gon Kim , Garam Park
CPC classification number: C09K11/883 , C09K11/025 , C09K11/0883 , H10K59/38 , B82Y20/00 , B82Y40/00 , G02F1/133617
Abstract: A quantum dot including a core including a first semiconductor nanocrystal including a Group III-V compound; and a semiconductor nanocrystal shell disposed on the core, the semiconductor nanocrystal shell including zinc, tellurium, and selenium, wherein the quantum dot does not include cadmium, and the semiconductor nanocrystal shell has a mole ratio of tellurium to selenium of less than about 0.025:1, a composition including the quantum dot, a quantum dot-polymer composite, a patterned layer including the composite, and an electronic device including the patterned layer.
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公开(公告)号：US11807764B2
公开(公告)日：2023-11-07
申请号：US16507790
申请日：2019-07-10
Applicant: Samsung Display Co., Ltd.
Inventor： Hyeyeon Yang , Shin Ae Jun
IPC: C09D11/38 , C08K5/101 , C08K5/37 , C09D11/36 , C08K3/11 , C08K5/03 , C08L33/10 , C08K3/105 , B82Y20/00
CPC classification number: C09D11/38 , C08K3/105 , C08K3/11 , C08K5/03 , C08K5/101 , C08K5/37 , C08L33/10 , C09D11/36 , B82Y20/00 , C08K2201/011
Abstract: An ink composition includes a quantum dot; a carboxyl group (—COOH)-containing binder polymer; an electrical insulating polymer precursor; a radical initiator; and a liquid vehicle, wherein the liquid vehicle includes a mixture of a first organic compound including a compound represented by Chemical Formula 1, a compound represented by Chemical Formula 2, or a combination thereof, and a second organic compound including a compound represented by Chemical Formula 3, a compound represented by Chemical Formula 4, or a combination thereof:
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3.发明授权公开(公告)号：US11613694B2
公开(公告)日：2023-03-28
申请号：US17346793
申请日：2021-06-14
Inventor： Tae Gon Kim , Ha Il Kwon , Shin Ae Jun
IPC: C09K11/02 , G03F7/00 , C08K3/00 , C09D5/22 , C09K11/88 , G02B5/20 , G02F1/1335 , G03F7/004 , G03F7/031 , G03F7/16 , G03F7/20 , G03F7/32 , G03F7/40 , H01L33/50 , H01L31/054 , B82Y20/00 , B82Y40/00 , H01L31/055
Abstract: A quantum dot-polymer composite film includes: a plurality of quantum dots, wherein a quantum dot of the plurality of quantum dots includes an organic ligand on a surface of a the quantum dot; a cured product of a photopolymerizable monomer including a carbon-carbon unsaturated bond; and a residue including a residue of a high-boiling point solvent, a residue of a polyvalent metal compound, or a combination thereof.
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公开(公告)号：US11597876B2
公开(公告)日：2023-03-07
申请号：US17227668
申请日：2021-04-12
Applicant: Samsung Display Co., Ltd.
Inventor： Hyeyeon Yang , Jooyeon Ahn , Tae Gon Kim , Jongmin Lee , Shin Ae Jun
IPC: C09K11/62 , C09K11/56 , C09K11/70 , H05B33/14 , G03F7/20 , G03F7/004 , C09K11/88 , C09K11/02 , G02F1/1335 , B82Y40/00 , B82Y20/00 , B82Y30/00
Abstract: A quantum dot, and a quantum dot composite and a device including the same, wherein the quantum dot includes a seed including a first semiconductor nanocrystal, a quantum well layer disposed on the seed and a shell disposed on the quantum well layer, the shell including a second semiconductor nanocrystal, and wherein the quantum dot does not include cadmium, wherein the first semiconductor nanocrystal includes a first zinc chalcogenide, wherein the second semiconductor nanocrystal includes a second zinc chalcogenide, and the quantum well layer includes an alloy semiconductor nanocrystal including indium (In), phosphorus (P), and gallium (Ga), and wherein a bandgap energy of the alloy semiconductor nanocrystal is less than a bandgap energy of the first semiconductor nanocrystal and less than a bandgap energy of the second semiconductor nanocrystal.
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公开(公告)号：US11530354B2
公开(公告)日：2022-12-20
申请号：US16950994
申请日：2020-11-18
Applicant: Samsung Display Co., Ltd.
Inventor： Taekhoon Kim , Shin Ae Jun , Yong Wook Kim , Tae Gon Kim , Garam Park
Abstract: A quantum dot including a core including a first semiconductor nanocrystal including a Group III-V compound; and a semiconductor nanocrystal shell disposed on the core, the semiconductor nanocrystal shell including zinc, tellurium, and selenium, wherein the quantum dot does not include cadmium, and the semiconductor nanocrystal shell has a mole ratio of tellurium to selenium of less than about 0.025:1, a composition including the quantum dot, a quantum dot-polymer composite, a patterned layer including the composite, and an electronic device including the patterned layer.
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Patent Agency Ranking
公开(公告)号：US11332666B2
公开(公告)日：2022-05-17
申请号：US17036068
申请日：2020-09-29
Applicant: Samsung Display Co., Ltd.
Inventor： Jooyeon Ahn , Jongmin Lee , Taekhoon Kim , Shin Ae Jun , Tae Gon Kim , Garam Park
IPC: C09K11/88 , C09K11/02 , H01L51/50 , C01G9/08 , C01B19/00 , C01G9/00 , C09K11/70 , C09K11/74 , H01L33/50 , B82Y30/00 , B82Y40/00 , B82Y20/00
Abstract: A quantum dot including a nanoparticle template including a first semiconductor nanocrystal including a Group II-VI compound, a quantum well including a second semiconductor nanocrystal disposed on the nanoparticle template, the second semiconductor nanocrystal including a Group IIIA metal excluding aluminum and a Group V element; and a shell comprising a third semiconductor nanocrystal disposed on the quantum well, the third semiconductor nanocrystal including a Group II-VI compound, wherein the quantum dot does not include cadmium, a band gap energy of the second semiconductor nanocrystal is less than a band gap energy of the first semiconductor nanocrystal, the band gap energy of the second semiconductor nanocrystal is less than a band gap energy of the third semiconductor nanocrystal, and the quantum dot includes an additional metal including an alkali metal, an alkaline earth metal, aluminum, iron, cobalt, nickel, copper, zinc, or a combination thereof.
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7.发明授权公开(公告)号：US11099410B2
公开(公告)日：2021-08-24
申请号：US15849994
申请日：2017-12-21
Inventor： Deukseok Chung , Shin Ae Jun , Tae Won Jeong , Yong Seok Han
IPC: G02F1/017 , G02F1/1362 , G02F1/1335 , G02F1/13357 , G03F7/00 , G03F7/033 , G03F7/004 , C09K11/62 , C09K11/70 , C09K11/02 , B32B37/06 , H01L31/0352
Abstract: A layered structure including a transparent substrate; a photoluminescent layer disposed on the transparent substrate and a pattern of a quantum dot polymer composite; and a capping layer disposed on the photoluminescent layer and including an inorganic material, a method of producing the same, a liquid crystal display including the same. The quantum dot polymer composite includes a polymer matrix; and a plurality of quantum dots in the polymer matrix, the pattern of the quantum dot polymer composite includes at least one repeating section and the repeating section includes a first section configured to emit light of a first peak wavelength, the inorganic material is disposed on at least a portion of a surface of the repeating section, and the inorganic material includes a metal oxide, a metal nitride, a metal oxynitride, a metal sulfide, or a combination thereof.
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公开(公告)号：US10808174B2
公开(公告)日：2020-10-20
申请号：US15855436
申请日：2017-12-27
Inventor： Young Seok Park , Shang Hyeun Park , Eun Joo Jang , Hyo Sook Jang , Shin Ae Jun , Dae Young Chung , Taekhoon Kim , Yuho Won
Abstract: A process for preparing a quantum dot of a core-shell structure including obtaining a first mixture including first precursor including a first metal, a ligand compound, and a solvent; adding a second precursor and a particle including a first semiconductor nanocrystal to the first mixture to obtain a second mixture; and heating the second mixture up to a reaction temperature and performing a reaction between the first precursor and the second precursor to form a layer of a shell including a crystalline or amorphous material, during formation of the layer of the shell or after formation of the layer of the shell, wherein the process includes adding an organic solution including an ammonium fluorinated salt including a solid salt having a melting point of greater than or equal to about 110° C. to the second mixture.
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公开(公告)号：US11661547B2
公开(公告)日：2023-05-30
申请号：US16883989
申请日：2020-05-26
Inventor： Shin Ae Jun , Taekhoon Kim , Garam Park , Yong Seok Han , Eun Joo Jang , Hyo Sook Jang , Tae Won Jeong , Shang Hyeun Park
IPC: C09K11/62 , C09K11/70 , C09K11/08 , C09K11/88 , C09K11/56 , C09K11/02 , C08K3/32 , C08K3/30 , G02F1/1335 , G02F1/13357 , B82Y40/00 , B82Y20/00 , B82Y30/00
CPC classification number: C09K11/025 , C08K3/30 , C08K3/32 , C09K11/703 , C09K11/883 , G02F1/133516 , G02F1/133617 , B82Y20/00 , B82Y30/00 , B82Y40/00 , C08K2201/001 , G02F2202/36 , Y10S977/774 , Y10S977/896 , Y10S977/95
Abstract: A quantum dot, including a core including a first semiconductor material that includes indium; and a shell including a second semiconductor material, and disposed on the core, wherein the first semiconductor material and the second semiconductor material are different, wherein the shell has at least two branch portions and a valley portion connecting the at least two branch portions, at least one of the at least two branch portions comprises Zn, Se, and S, and a content of sulfur in the at least one branch portion increases in a direction away from the core.
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10.发明授权公开(公告)号：US11613699B2
公开(公告)日：2023-03-28
申请号：US16918316
申请日：2020-07-01
Applicant: Samsung Display Co., Ltd.
Inventor： Nayoun Won , Garam Park , Shin Ae Jun , Tae Gon Kim , Taekhoon Kim , Shang Hyeun Park , Mi Hye Lim
IPC: H01L51/50 , C09K11/88 , C09K11/08 , C09K11/02 , C09D5/22 , C09D4/06 , C09D7/65 , C09D135/02 , C09D7/45 , H01L27/32 , B82Y20/00 , B82Y40/00
Abstract: A quantum dot including a core including a semiconductor nanocrystal including a Group III-V compound; and a first semiconductor nanocrystal shell disposed on the semiconductor nanocrystal core, the first semiconductor nanocrystal shell including zinc, selenium, and optionally sulfur, and a second semiconductor nanocrystal shell disposed on the first semiconductor nanocrystal shell, the second semiconductor nanocrystal shell including zinc, sulfur, and optionally selenium, wherein the quantum dot does not include cadmium, an emission peak wavelength of the quantum dot is in a range of about 500 nanometers (nm) to about 550 nm, and an ultraviolet-visible absorption spectrum of the quantum dot includes a first exciton absorption peak and a second exciton absorption peak, a composition including the same, a composite, and an electronic device.
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