Liquid crystal display device and method for fabricating the same

    公开(公告)号:US10101627B2

    公开(公告)日:2018-10-16

    申请号:US15360736

    申请日:2016-11-23

    摘要: A liquid crystal display (LCD) device capable of preventing impurities from permeating into a channel area of a switching element, the LCD device including: a gate electrode above a substrate; a semiconductor layer which overlaps the gate electrode; a drain electrode and a source electrode which overlap the semiconductor layer; an ohmic contact layer between the semiconductor layer and the drain electrode and between the semiconductor layer and the source electrode; a pixel electrode which is connected to one of the drain electrode and the source electrode; and a gate insulating layer between the gate electrode and the semiconductor layer, the gate insulating layer comprising fluorine. A concentration of the fluorine is decreasing, as the fluorine of the gate insulating layer being more adjacent to the substrate.

    DISPLAY APPARATUS
    4.
    发明申请

    公开(公告)号:US20220005899A1

    公开(公告)日:2022-01-06

    申请号:US17189262

    申请日:2021-03-02

    IPC分类号: H01L27/32

    摘要: A display apparatus including a substrate having a display area, a plurality of pixel circuits arranged in the display area, each of the pixel circuits including a thin-film transistor, a plurality of display elements respectively connected to the pixel circuits, and a composite layer disposed between the pixel circuits and the display elements, the composite layer including a first inorganic insulating layer, a first organic insulating layer, and a second inorganic insulating layer, which are sequentially stacked.

    Liquid crystal display device and method for fabricating the same

    公开(公告)号:US10444586B2

    公开(公告)日:2019-10-15

    申请号:US16129503

    申请日:2018-09-12

    摘要: A liquid crystal display (LCD) device capable of perventing impurities from permeating into a channel area of a switching element, the LCD device including: a gate electrode above a substrate; a semiconductor layer which overlaps the gate electrode; a drain electrode and a source electrode which overlap the semiconductor layer; an ohmic contact layer between the semiconductor layer and the drain electrode and between the semiconductor layer and the source electrode; a pixel electrode which is connected to one of the drain electrode and the source electrode; and a gate insulating layer between the gate electrode and the semiconductor layer, the gate insulating layer comprising fluorine. A concentration of the fluorine is decreasing, as the fluorine of the gate insulating layer being more adjacent to the substrate.