公开(公告)号：US20160005600A1

公开(公告)日：2016-01-07

申请号：US14568309

申请日：2014-12-12

Applicant: SAMSUNG DISPLAY CO., LTD.

Inventor： Joonhwa BAE ,  Yoonho KHANG

IPC: H01L21/02 ,  H01L27/12 ,  H01L29/786

CPC classification number: H01L21/02675 ,  H01L21/02422 ,  H01L21/02532 ,  H01L21/02691 ,  H01L27/1222 ,  H01L29/7866

Abstract: A method of manufacturing a thin film transistor substrate includes forming an amorphous silicon layer on a substrate, the substrate having a rectangular shape, and irradiating the amorphous silicon layer with a laser beam at a random pitch, such that the amorphous silicon layer is crystallizes into a polycrystalline silicon layer, wherein the laser beam has a major axis and a minor axis, the major axis being non-parallel with respect to sides of the substrate.

Abstract translation: 制造薄膜晶体管基板的方法包括在基板上形成非晶硅层，所述基板具有矩形形状，并以随机间距用激光束照射所述非晶硅层，使得所述非晶硅层结晶成 多晶硅层，其中所述激光束具有长轴和短轴，所述长轴相对于所述衬底的侧面不平行。

公开(公告)号：US20160035754A1

公开(公告)日：2016-02-04

申请号：US14585525

申请日：2014-12-30

Applicant: SAMSUNG DISPLAY CO., LTD.

Inventor： Dongjo KIM ,  Myounggeun CHA ,  Yoonho KHANG ,  Soyoung KOO

IPC: H01L27/12 ,  H01L21/02 ,  H01L27/32 ,  H01L29/786

CPC classification number: H01L27/1218 ,  H01L21/02422 ,  H01L21/02488 ,  H01L21/02494 ,  H01L21/02502 ,  H01L21/02532 ,  H01L21/02686 ,  H01L27/1222 ,  H01L29/66757 ,  H01L29/66772 ,  H01L29/78603 ,  H01L29/78654 ,  H01L29/78675

Abstract: Provided is a semiconductor device including a buffer layer that is on a substrate and includes an inclined surface; a crystalline silicon layer that is on the buffer layer; a gate electrode that is on the crystalline silicon layer while being insulated from the crystalline silicon layer; and a source electrode and a drain electrode that are each electrically connected to the crystalline silicon layer, the angle between the substrate and the inclined surface being in a range of about 17.5 degrees to less than about 70 degrees.

Abstract translation: 本发明提供一种半导体器件，其包括在衬底上并包括倾斜表面的缓冲层; 位于缓冲层上的晶体硅层; 位于结晶硅层上同时与晶体硅层绝缘的栅电极; 以及源极电极和漏极电极，其电连接到晶体硅层，基板和倾斜表面之间的角度在约17.5度至小于约70度的范围内。

公开(公告)号：US20210249542A1

公开(公告)日：2021-08-12

申请号：US17086545

申请日：2020-11-02

Applicant: SAMSUNG DISPLAY CO., LTD.

Inventor： Jaeseob LEE ,  Meejae KANG ,  Yoonho KHANG ,  Keunwoo KIM ,  Hanbit KIM ,  Thanhtien NGUYEN

IPC: H01L29/786 ,  H01L27/32

Abstract: A display device including: a first thin film transistor (TFT) including a first semiconductor layer and a first gate electrode, the first semiconductor layer including a first channel region, a first source region, and a first drain region; a third TFT including a third semiconductor layer and a third gate electrode, the third semiconductor layer including a third channel region, a third source region, and a third drain region, wherein a leakage current of the third TFT in an off-state is less than a leakage current of the first TFT in the off-state; and a pixel electrode connected to one of the first source region and the first drain region, wherein the one of the first source region and the first drain region is connected to the third TFT.

公开(公告)号：US20170084755A1

公开(公告)日：2017-03-23

申请号：US15367568

申请日：2016-12-02

Applicant: SAMSUNG DISPLAY CO., LTD.

Inventor： Jongchan LEE ,  Yoonho KHANG ,  Myounghwa KIM ,  Joonhwa BAE ,  Myounggeun CHA

IPC: H01L29/786 ,  H01L29/66 ,  H01L21/02 ,  H01L21/3205 ,  H01L29/45 ,  H01L27/12

CPC classification number: H01L21/823418 ,  H01L21/02422 ,  H01L21/02488 ,  H01L21/02532 ,  H01L21/02592 ,  H01L21/02667 ,  H01L21/02672 ,  H01L21/28518 ,  H01L21/32053 ,  H01L27/1222 ,  H01L27/1274 ,  H01L27/1277 ,  H01L27/3262 ,  H01L29/41733 ,  H01L29/458 ,  H01L29/66765 ,  H01L29/78618 ,  H01L29/78678

Abstract: A thin film transistor includes a polysilicon layer on a substrate, which includes a first area between second and third areas. A polysilicon layer is formed on the substrate, and a source electrode and a drain electrode are formed on the polysilicon layer in the first and third areas. Each of the source electrode and the drain electrode includes a metal silicide layer adjacent the polysilicon layer.

公开(公告)号：US20160093646A1

公开(公告)日：2016-03-31

申请号：US14689927

申请日：2015-04-17

Applicant: SAMSUNG DISPLAY CO., LTD.

Inventor： Myounggeun CHA ,  Dongjo KIM ,  Yoonho KHANG ,  Myounghwa KIM ,  Kyoungwon LEE

IPC: H01L27/12 ,  H01L29/66 ,  H01L29/786

CPC classification number: H01L27/1255 ,  H01L27/1274 ,  H01L29/66757 ,  H01L29/66765 ,  H01L29/78645 ,  H01L29/78648 ,  H01L29/78675 ,  H01L29/78678

Abstract: A thin film transistor (TFT) substrate, a flat display apparatus including the TFT substrate, a method of manufacturing the TFT substrate, and a method of manufacturing the flat display apparatus, the thin film transistor (TFT) substrate including a substrate; a first gate electrode on the substrate, the first gate electrode including a first branch electrode and a second branch electrode that are spaced apart from one another; a polysilicon layer on the first gate electrode and insulated from the first gate electrode; and a second gate electrode on the polysilicon layer, the second gate electrode being insulated from the polysilicon layer and overlying the first and second branch electrodes.

Abstract translation: 薄膜晶体管（TFT）基板，包括TFT基板的平面显示装置，TFT基板的制造方法以及制造平面显示装置的方法，所述薄膜晶体管（TFT）基板包括基板; 在所述基板上的第一栅电极，所述第一栅极包括彼此间隔开的第一分支电极和第二分支电极; 在所述第一栅电极上并与所述第一栅电极绝缘的多晶硅层; 以及在所述多晶硅层上的第二栅电极，所述第二栅电极与所述多晶硅层绝缘并且覆盖所述第一和第二分支电极。

公开(公告)号：US20160042959A1

公开(公告)日：2016-02-11

申请号：US14597563

申请日：2015-01-15

Applicant: SAMSUNG DISPLAY CO., LTD.

Inventor： Jongchan LEE ,  Yoonho KHANG ,  Myounghwa KIM ,  Joonhwa BAE ,  Myounggeun CHA

IPC: H01L21/285 ,  H01L21/02 ,  H01L29/417 ,  H01L29/66 ,  H01L29/786 ,  H01L29/45

CPC classification number: H01L21/823418 ,  H01L21/02422 ,  H01L21/02488 ,  H01L21/02532 ,  H01L21/02592 ,  H01L21/02667 ,  H01L21/02672 ,  H01L21/28518 ,  H01L21/32053 ,  H01L27/1222 ,  H01L27/1274 ,  H01L27/1277 ,  H01L27/3262 ,  H01L29/41733 ,  H01L29/458 ,  H01L29/66765 ,  H01L29/78618 ,  H01L29/78678

Abstract: A thin film transistor includes a polysilicon layer on a substrate, which includes a first area between second and third areas. A polysilicon layer is formed on the substrate, and a source electrode and a drain electrode are formed on the polysilicon layer in the first and third areas. Each of the source electrode and the drain electrode includes a metal silicide layer adjacent the polysilicon layer.

Abstract translation: 薄膜晶体管包括在基板上的多晶硅层，其包括第二和第三区域之间的第一区域。 在基板上形成多晶硅层，在第一和第三区域的多晶硅层上形成源电极和漏电极。 源电极和漏电极中的每一个包括与多晶硅层相邻的金属硅化物层。

公开(公告)号：US20160013323A1

公开(公告)日：2016-01-14

申请号：US14565880

申请日：2014-12-10

Applicant: SAMSUNG DISPLAY CO., LTD.

Inventor： Woonghee JEONG ,  Yoonho KHANG ,  Myounghwa KIM ,  Youngki SHIN ,  Kyoungwon LEE

IPC: H01L29/786 ,  H01L27/12 ,  H01L29/66

CPC classification number: H01L29/78603 ,  H01L27/1222 ,  H01L27/1274 ,  H01L29/66757 ,  H01L29/78675

Abstract: A thin film transistor substrate includes a substrate, an anodized aluminum layer on the substrate, a polycrystalline silicon layer covering the anodized aluminum layer, and an insulating layer covering the polycrystalline silicon layer.

Abstract translation: 薄膜晶体管衬底包括衬底，衬底上的阳极氧化铝层，覆盖阳极化铝层的多晶硅层和覆盖多晶硅层的绝缘层。

公开(公告)号：US20150200240A1

公开(公告)日：2015-07-16

申请号：US14506061

申请日：2014-10-03

Applicant: Samsung Display Co., Ltd.

Inventor： Seung-Hwan CHO ,  Yoonho KHANG ,  Hyunjae NA ,  Youngki SHIN ,  Donghwan SHIM

IPC: H01L27/32 ,  H01L29/786

CPC classification number: H01L29/7869 ,  H01L29/45 ,  H01L29/66969

Abstract: A display panel includes a base substrate including a pixel area and a peripheral area, a semiconductor layer disposed on a portion of the base substrate, a display element disposed in the pixel area, and a thin film transistor which controls the display element and includes an input electrode, an output electrode and a control electrode, in which the semiconductor layer includes a first portion disposed on the input electrode of the first thin film transistor, a second portion disposed on the output electrode of the first thin film transistor, and a third portion which connects the first portion and the second portion, overlaps the control electrode of the first thin film transistor, and defines a channel of the first thin film transistor.

Abstract translation: 显示面板包括：基板，包括像素区域和外围区域;设置在基板的一部分上的半导体层;设置在像素区域中的显示元件;以及控制显示元件的薄膜晶体管， 输入电极，输出电极和控制电极，其中半导体层包括设置在第一薄膜晶体管的输入电极上的第一部分，设置在第一薄膜晶体管的输出电极上的第二部分，以及第三部分 连接第一部分和第二部分的部分与第一薄膜晶体管的控制电极重叠，并限定第一薄膜晶体管的沟道。