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公开(公告)号：US09347125B2
公开(公告)日：2016-05-24
申请号：US14725849
申请日：2015-05-29
发明人： In-Bae Kim , Jong-Hyun Choung , Seon-Il Kim , Hong-Sick Park , Wang Woo Lee , Jae-Woo Jeong , In Seol Kuk , Sang-Tae Kim , Young-Chul Park , Keyong Bo Shim , In-Ho Yu , Young-Jin Yoon , Suck-Jun Lee , Joon-Woo Lee , Sang-Hoon Jang , Young-Jun Jin
IPC分类号： C23F1/18 , C22F1/18 , H01L21/28 , C23F1/26 , H01L27/12 , H01L21/3213 , C09K13/00 , C09K13/04 , C09K13/06 , C09K13/08 , C23F1/14 , C23F1/44 , H01L21/32 , H05K3/06
CPC分类号： C22F1/18 , C09K13/00 , C09K13/04 , C09K13/06 , C09K13/08 , C23F1/14 , C23F1/18 , C23F1/26 , C23F1/44 , H01L21/28008 , H01L21/32 , H01L21/32134 , H01L27/124 , H01L27/1288 , H05K3/067
摘要： A etchant composition that includes, based on a total weight of the etchant composition, about 0.5 wt % to about 20 wt % of a persulfate, about 0.5 wt % to about 0.9 wt % of an ammonium fluoride, about 1 wt % to about 10 wt % of an inorganic acid, about 0.5 wt % to about 5 wt % of a cyclic amine compound, about 0.1 wt % to about 10.0 wt % of a sulfonic acid, about 5 wt % to about 10 wt % of an organic acid or a salt thereof, and a remainder of water. The etchant composition may be configured to etch a metal layer including copper and titanium, to form a metal wire that may be included in a thin film transistor array panel of a display device.
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2.发明授权Etchant composition and method of forming metal wire and thin film transistor array panel using the same 有权蚀刻剂组成和形成金属线和薄膜晶体管阵列面板的方法使用相同公开(公告)号：US09045833B2
公开(公告)日：2015-06-02
申请号：US13718557
申请日：2012-12-18
发明人： In-Bae Kim , Jong-Hyun Choung , Seon-Il Kim , Hong-Sick Park , Wang Woo Lee , Jae-Woo Jeong , In Seol Kuk , Sang-Tae Kim , Young-Chul Park , Keyong Bo Shim , In-Ho Yu , Young-Jin Yoon , Suck-Jun Lee , Joon-Woo Lee , Sang-Hoon Jang , Young-Jun Jin
CPC分类号： C22F1/18 , C09K13/00 , C09K13/04 , C09K13/06 , C09K13/08 , C23F1/14 , C23F1/18 , C23F1/26 , C23F1/44 , H01L21/28008 , H01L21/32 , H01L21/32134 , H01L27/124 , H01L27/1288 , H05K3/067
摘要： A etchant composition that includes, based on a total weight of the etchant composition, about 0.5 wt % to about 20 wt % of a persulfate, about 0.5 wt % to about 0.9 wt % of an ammonium fluoride, about 1 wt % to about 10 wt % of an inorganic acid, about 0.5 wt % to about 5 wt % of a cyclic amine compound, about 0.1 wt % to about 10.0 wt % of a sulfonic acid, about 5 wt % to about 10 wt % of an organic acid or a salt thereof, and a remainder of water. The etchant composition may be configured to etch a metal layer including copper and titanium, to form a metal wire that may be included in a thin film transistor array panel of a display device.
摘要翻译： 一种蚀刻剂组合物，其包含基于蚀刻剂组合物的总重量为约0.5重量％至约20重量％的过硫酸盐，约0.5重量％至约0.9重量％的氟化铵，约1重量％至约10重量％ 无机酸的重量百分比，约0.5重量％至约5重量％的环胺化合物，约0.1重量％至约10.0重量％的磺酸，约5重量％至约10重量％的有机酸，或 其盐，剩余的水。 蚀刻剂组合物可以被配置为蚀刻包括铜和钛的金属层，以形成可以包括在显示装置的薄膜晶体管阵列面板中的金属线。
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